公开(公告)号：EP1816463A1

公开(公告)日：2007-08-08

申请号：EP07250204.0

申请日：2007-01-18

Applicant: Northrop Grumman Corporation

Inventor： Chou, Mau-Song ,  Arenberg, Jonathan W. ,  Menard, Mark A. ,  Chung, Thomas T.

IPC: G01N21/35 ,  G01N21/88 ,  G01N25/72 ,  G02B21/00 ,  H01L21/66

CPC classification number: G01N21/8806 ,  G01N21/3563 ,  G01N21/9501 ,  G01N25/72 ,  G01N2201/06133

Abstract: A technique for providing high-contrast images of defects in semiconductor devices (10) and arrays of such devices (10), by illuminating each semiconductor device (10) under inspection with broadband infrared radiation, and then forming an image of radiation that is specularly reflected from the semiconductor device. Many semiconductor devices and arrays of such devices have a metal backing layer (16) that specularly reflects the illumination back into an appropriately positioned and aligned camera (14), selected to be sensitive to infrared wavelengths at which the semiconductor device (10) materials are relatively transparent.

Abstract translation: 一种用于通过用宽带红外辐射照射被检查的每个半导体器件（10）来提供半导体器件（10）中的缺陷的高对比度图像和这种器件（10）的阵列的技术，然后形成镜面的辐射图像 从半导体器件反射。 许多这样的器件的半导体器件和阵列具有金属背衬层（16），其将照明反射回适当定位和对准的相机（14），其选择为对半导体器件（10）材料的红外波长敏感 比较透明