公开(公告)号：DE68927920T2

公开(公告)日：1997-07-17

申请号：DE68927920

申请日：1989-01-19

Applicant: OPTICAL COATING LABORATORY INC

Inventor： SCOBEY MICHAEL A ,  SEDDON RICHARD IAN ,  SEESER JAMES W ,  AUSTIN RUSSEL R ,  LEFABVRE PAUL M ,  MANLEY BARRY W

IPC: C23C8/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  H01J37/34

Abstract: A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.

公开(公告)号：CA2029755A1

公开(公告)日：1991-05-14

申请号：CA2029755

申请日：1990-11-13

Applicant: OPTICAL COATING LABORATORY INC

Inventor： SEESER JAMES W ,  ALLEN THOMAS H ,  DICKEY ERIC R ,  HICHWA BRYANT P ,  TEMPLE MICHAEL D ,  VAN HORN CRAIG C ,  WENTWORTH PATRICK R ,  ILLSLEY ROLF F ,  KLINGER ROBERT E ,  LEFEBVRE PAUL M ,  SCOBEY MICHAEL A ,  SEDDON RICHARD I ,  SOBERANIS DAVID L

IPC: C23C14/35 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  H01J37/34

公开(公告)号：CA2021367A1

公开(公告)日：1991-01-19

申请号：CA2021367

申请日：1990-07-17

Applicant: OPTICAL COATING LABORATORY INC

Inventor： LEFEBVRE PAUL M ,  SEESER JAMES W ,  SEDDON RICHARD I ,  SCOBEY MICHAEL A ,  MANLEY BARRY W

IPC: G02B1/10 ,  C23C8/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/58 ,  C23C14/14 ,  B05D3/10 ,  B05D5/06

Abstract: A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter deposition and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. In one aspect, the associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated deposition and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by the ability to form durable optical quality thin films of nominal refractive indices and controlled coating thickness, including both constant and selectively varied thickness profiles.

公开(公告)号：AT189272T

公开(公告)日：2000-02-15

申请号：AT95117528

申请日：1990-11-12

Applicant: OPTICAL COATING LABORATORY INC

Inventor： SEESER JAMES W ,  ALLEN THOMAS H ,  DICKEY ERIK R ,  HICHWA BRYANT P ,  ILLSLEY ROLF F ,  KLINGER ROBERT F ,  LEFEBVRE PAUL M ,  SCOBEY MICHAEL A ,  SEDDON RICHARD I ,  SOBERANIS DAVID L ,  TEMPLE MICHAEL D ,  VAN HORN CRAIG C ,  WENTHWORTH PATRICK R

IPC: C23C14/35 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  C23C14/32

公开(公告)号：CA1340651C

公开(公告)日：1999-07-13

申请号：CA590272

申请日：1989-02-07

Applicant: OPTICAL COATING LABORATORY INC

Inventor： AUSTIN R RUSSEL ,  SEESER JAMES W N ,  LEFEBVRE PAUL M ,  SEDDON RICHARD IAN ,  SCOBEY MICHAEL A ,  MANLEY BARRY W

IPC: C23C8/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58

Abstract: A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter cathode and intense plasma reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated cathode and reaction zones and is characterized by the ability to form a wide range of materials, by scaling and high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.

公开(公告)号：DE68927920D1

公开(公告)日：1997-05-07

申请号：DE68927920

申请日：1989-01-19

Applicant: OPTICAL COATING LABORATORY INC

Inventor： SCOBEY MICHAEL A ,  SEDDON RICHARD IAN ,  SEESER JAMES W ,  AUSTIN RUSSEL R ,  LEFABVRE PAUL M ,  MANLEY BARRY W

IPC: C23C8/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  H01J37/34

Abstract: A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.

公开(公告)号：DE69027004D1

公开(公告)日：1996-06-20

申请号：DE69027004

申请日：1990-11-12

Applicant: OPTICAL COATING LABORATORY INC

Inventor： SEESER JAMES W ,  ALLEN THOMAS H ,  DICKEY ERIK R ,  HICHWA BRYANT P ,  ILLSLEY ROLF F ,  KLINGER ROBERT F ,  LEFEBVRE PAUL M ,  SCOBEY MICHAEL A ,  SEDDON RICHARD I ,  SOBERANIS DAVID L ,  TEMPLE MICHAEL D ,  VAN HORN CRAIG C ,  WENTWORTH PATRICK R

IPC: C23C14/35 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  C23C14/32

公开(公告)号：DE68927920T3

公开(公告)日：2004-12-16

申请号：DE68927920

申请日：1989-01-19

Applicant: OPTICAL COATING LABORATORY INC

Inventor： SCOBEY MICHAEL A ,  SEDDON RICHARD IAN ,  SEESER JAMES W ,  AUSTIN RUSSEL R ,  LEFABVRE PAUL M ,  MANLEY BARRY W

IPC: C23C8/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  H01J37/34

Abstract: A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.

公开(公告)号：DE69033441D1

公开(公告)日：2000-03-02

申请号：DE69033441

申请日：1990-11-12

Applicant: OPTICAL COATING LABORATORY INC

Inventor： SEESER JAMES W ,  ALLEN THOMAS H ,  DICKEY ERIK R ,  HICHWA BRYANT P ,  ILLSLEY ROLF F ,  KLINGER ROBERT F ,  LEFEBVRE PAUL M ,  SCOBEY MICHAEL A ,  SEDDON RICHARD I ,  SOBERANIS DAVID L ,  TEMPLE MICHAEL D ,  VAN HORN CRAIG C ,  WENTHWORTH PATRICK R

IPC: C23C14/35 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  C23C14/32

公开(公告)号：AT151119T

公开(公告)日：1997-04-15

申请号：AT89300521

申请日：1989-01-19

Applicant: OPTICAL COATING LABORATORY INC

Inventor： SCOBEY MICHAEL A ,  SEDDON RICHARD IAN ,  SEESER JAMES W ,  AUSTIN RUSSEL R ,  LEFABVRE PAUL M ,  MANLEY BARRY W

IPC: C23C8/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  H01J37/34

Abstract: A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.