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    2.
    发明专利
    未知

    公开(公告)号：DE68929053T2

    公开(公告)日：2000-02-03

    申请号：DE68929053

    申请日：1989-01-19

    Applicant: OPTICAL COATING LABORATORY INC

    Inventor： SCOBEY MICHAEL A ,  SEEDON RICHARD IAN ,  SEESER JAMES W ,  AUSTIN RUSSEL R ,  LEFABVRE PAUL M ,  MANLEY BARRY W

    IPC: C23C8/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  H01J37/34

    Abstract: A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.

    3.
    发明专利
    未知

    公开(公告)号：DE68927920T3

    公开(公告)日：2004-12-16

    申请号：DE68927920

    申请日：1989-01-19

    Applicant: OPTICAL COATING LABORATORY INC

    Inventor： SCOBEY MICHAEL A ,  SEDDON RICHARD IAN ,  SEESER JAMES W ,  AUSTIN RUSSEL R ,  LEFABVRE PAUL M ,  MANLEY BARRY W

    IPC: C23C8/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  H01J37/34

    Abstract: A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.

    5.
    发明专利
    未知

    公开(公告)号：AT151119T

    公开(公告)日：1997-04-15

    申请号：AT89300521

    申请日：1989-01-19

    Applicant: OPTICAL COATING LABORATORY INC

    Inventor： SCOBEY MICHAEL A ,  SEDDON RICHARD IAN ,  SEESER JAMES W ,  AUSTIN RUSSEL R ,  LEFABVRE PAUL M ,  MANLEY BARRY W

    IPC: C23C8/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  H01J37/34

    Abstract: A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.

    6.
    发明专利
    未知

    公开(公告)号：DE68929053D1

    公开(公告)日：1999-09-16

    申请号：DE68929053

    申请日：1989-01-19

    Applicant: OPTICAL COATING LABORATORY INC

    Inventor： SCOBEY MICHAEL A ,  SEEDON RICHARD IAN ,  SEESER JAMES W ,  AUSTIN RUSSEL R ,  LEFABVRE PAUL M ,  MANLEY BARRY W

    IPC: C23C8/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  H01J37/34

    Abstract: A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.

    7.
    发明专利
    未知

    公开(公告)号：AT183245T

    公开(公告)日：1999-08-15

    申请号：AT95101758

    申请日：1989-01-19

    Applicant: OPTICAL COATING LABORATORY INC

    Inventor： SCOBEY MICHAEL A ,  SEEDON RICHARD IAN ,  SEESER JAMES W ,  AUSTIN RUSSEL R ,  LEFABVRE PAUL M ,  MANLEY BARRY W

    IPC: C23C8/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/56 ,  C23C14/58 ,  H01J37/34

    Abstract: A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.

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