公开(公告)号：WO2021058464A1

公开(公告)日：2021-04-01

申请号：PCT/EP2020/076401

申请日：2020-09-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ANC, Maria J. ,  KURTIN, Juanita N. ,  TREADWAY, Joseph

IPC: C09K11/02 ,  C09K11/07 ,  H01L33/50

Abstract: A conversion layer, a light emitting device and a method for producing a conversion layer are disclosed. In an embodiment a conversion layer includes light-converting nanocrystals, an encapsulation surrounding the light-converting nanocrystals and ligands bonded to a surface of the encapsulation, wherein encapsulated light-converting nanocrystals are crosslinked by the ligands.

公开(公告)号：WO2020260293A1

公开(公告)日：2020-12-30

申请号：PCT/EP2020/067522

申请日：2020-06-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK

Inventor： OWEN, Jonathan ,  ANC, Maria J. ,  RAUKAS, Madis ,  TREADWAY, Joseph ,  SWARNAKAR, Anindya ,  MCMURTRY, Brandon

IPC: C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88

Abstract: A quantum dot structure and a method for producing a quantum dot structure are disclosed. In an embodiment the quantum dot structure includes a core comprising a III-V- compound semiconductor material, an intermediate region comprising a III-V-compound semiconductor material at least partially surrounding the core, a shell comprising a III-V- compound semiconductor material at least partially surrounding the core and the intermediate region and a passivation region comprising a II-VI-compound semiconductor material at least partially surrounding the shell.

公开(公告)号：WO2018197616A1

公开(公告)日：2018-11-01

申请号：PCT/EP2018/060740

申请日：2018-04-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ANC, Maria J. ,  MARK, Hannah

IPC: H01L33/50 ,  H01L33/64

Abstract: Wavelength converters (103) with improved thermal conductivity are described. In some embodiments the wavelength converters include a thermally conductive component (204, 206) and a wavelength conversion material (205) mixed with or dispersed in the thermally conductive component. The wavelength conversion material (205) includes non-agglomerated quantum dots. The presence of the thermally conductive component may facilitate removal of heat from the wavelength converter, potentially reducing the impact of elevated temperature on the performance of the wavelength conversion material therein. Methods of making such wavelength converters and lighting devices including such wavelength converters are also described.

公开(公告)号：WO2020109137A1

公开(公告)日：2020-06-04

申请号：PCT/EP2019/082118

申请日：2019-11-21

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ANC, Maria J. ,  KUNDALIYA, Darshan ,  RAUKAS, Madis ,  O'BRIEN, David

IPC: H01L33/50 ,  H01L33/20 ,  H01L33/22 ,  H01L33/44 ,  H01L33/54

Abstract: A light-emitting device is described, the light-emitting device comprising a light-emitting semiconductor chip having a semiconductor layer sequence comprising at least one light- emitting semiconductor layer and a light-outcoupling surface, and a wavelength conversion layer arranged on the light-outcoupling surface, wherein the wavelength conversion layer comprises quantum dots. Furthermore, a method for manufacturing a light-emitting device is described.