公开(公告)号：DE10101734A1

公开(公告)日：2002-07-25

申请号：DE10101734

申请日：2001-01-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HEINDL ALEXANDER ,  BUCHNER ANTON

IPC: G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L33/00 ,  H01L21/312 ,  H01L21/308

Abstract: The invention relates to a method for producing an etching mask, characterized by covering the photosensitive resist layer (3), disposed on the surface (2) of a substrate (1), with a metallization layer (7) in order to heat it up so that after heating an etch-resisting photosensitive resist layer having discrete structures is available.

公开(公告)号：DE10101734C2

公开(公告)日：2003-04-24

申请号：DE10101734

申请日：2001-01-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HEINDL ALEXANDER ,  BUCHNER ANTON

IPC: G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L33/00 ,  H01L21/312 ,  H01L21/308

Abstract: A photoresist layer (3) on the surface (2) of a substrate (1) is covered with a metalization layer (7) for the purpose of heating, so that an etching-stable photoresist layer with sharp structures is available after heating.

公开(公告)号：WO02056113A2

公开(公告)日：2002-07-18

申请号：PCT/DE0200109

申请日：2002-01-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BUCHNER ANTON ,  HEINDL ALEXANDER

Inventor： BUCHNER ANTON ,  HEINDL ALEXANDER

IPC: G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L33/00 ,  G03F

CPC classification number: G03F7/09 ,  G03F7/40 ,  H01L21/0274 ,  Y10T156/1034

Abstract: The invention relates to a method for producing an etching mask, characterized by covering the photosensitive resist layer (3), disposed on the surface (2) of a substrate (1), with a metallization layer (7) in order to heat it up so that after heating an etch-resisting photosensitive resist layer having discrete structures is available.

Abstract translation: 在基板（1）的表面（2）上的光致抗蚀剂层（3）上覆盖有用于加热的金属化层（7），从而加热后可得到具有尖锐结构的蚀刻稳定的光致抗蚀剂层。