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    Semiconductor device with corner reflector
    1.
    发明专利
    Semiconductor device with corner reflector 审中-公开
    具有角反射镜的半导体器件

    公开(公告)号：JP2009071307A

    公开(公告)日：2009-04-02

    申请号：JP2008231300

    申请日：2008-09-09

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： LINDBERG HANS ,  ILLEK STEFAN

    IPC: H01S5/14 ,  H01S5/183

    CPC classification number: H01S5/026 ,  H01S5/041 ,  H01S5/1071 ,  H01S5/1085 ,  H01S5/183 ,  H01S5/4025 ,  H01S5/4056

    Abstract: PROBLEM TO BE SOLVED: To prevent the generation of shading in an emission profile.
    SOLUTION: A semiconductor laser device including at least one semiconductor laser chip is provided, wherein the semiconductor laser chip contains an active layer that emits electromagnetic radiation. Further, at least one corner reflector 1 is formed in the semiconductor laser chip. The corner reflector 1 has first and second reflective surfaces 14, 15, wherein the first and second reflection surfaces 14, 15 are arranged at an angle of less than 90 degrees with respect to one another. This results in an improved emission characteristic of radiation emitted from the semiconductor laser device.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：为了防止在发射轮廓中产生阴影。 解决方案：提供了包括至少一个半导体激光器芯片的半导体激光器件，其中半导体激光器芯片包含发射电磁辐射的有源层。 此外，在半导体激光芯片中形成至少一个角部反射体1。 拐角反射体1具有第一和第二反射表面14,15，其中第一和第二反射表面14,15相对于彼此以小于90度的角度布置。 这导致从半导体激光器件发射的辐射的改进的发射特性。 版权所有（C）2009，JPO＆INPIT

    SURFACE-EMITTING SEMICONDUCTOR LASER HAVING A MONOLITHIC INTEGRATED PUMP LASER
    2.
    发明申请
    SURFACE-EMITTING SEMICONDUCTOR LASER HAVING A MONOLITHIC INTEGRATED PUMP LASER 审中-公开
    WITH单片集成泵浦激光器面发光半导体激光器

    公开(公告)号：WO2009109166A3

    公开(公告)日：2009-11-19

    申请号：PCT/DE2009000268

    申请日：2009-02-25

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  LINDBERG HANS ,  ILLEK STEFAN

    Inventor： LINDBERG HANS ,  ILLEK STEFAN

    IPC: H01S5/183 ,  H01S5/026 ,  H01S5/04

    CPC classification number: H01S5/0657 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18341 ,  H01S5/18383 ,  H01S5/34

    Abstract: The invention relates to a surface-emitting semiconductor laser comprising a semiconductor base (10) having an active zone (1) with a quantum well structure, the quantum well structure containing a plurality of quantum wells (2) which are formed by respective quantum well layers (3) arranged between barrier layers (4). The surface-emitting semiconductor laser further comprises a pump laser (6) which is monolithically integrated into the semiconductor base (10) and which emits pump radiation for optically pumping the active zone (1), the pump radiation forming a mode profile (21) in the semiconductor base (10) and the quantum wells (2) being interspaced in such a manner that they are arranged in the zone of a maximum (22) of the mode profile (21) of the pump radiation.

    Abstract translation: 它是一种表面发射半导体激光器包括具有（1）具有量子阱结构，其中该量子阱结构包括多个量子阱（2），其被布置在每个由一个阻挡层（4）之间的量子阱层的有源区的半导体本体（10）（3）形成 和在半导体本体中单片集成用于光学泵浦所述活性区（1）的泵辐射的发射指定（10）抽运激光器（6）。 泵浦辐射使得在半导体本体（10）和所述量子阱（2）的模式简档（21）彼此，使得其泵浦辐射都是在模式简档（21）的最大值（22）的区域中分别布置间隔开。

    SURFACE-EMITTING SEMICONDUCTOR LASER
    3.
    发明申请
    SURFACE-EMITTING SEMICONDUCTOR LASER 审中-公开
    表面发射型半导体激光器

    公开(公告)号：WO2009094967A2

    公开(公告)日：2009-08-06

    申请号：PCT/DE2008002128

    申请日：2008-12-18

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  LINDBERG HANS ,  ILLEK STEFAN

    Inventor： LINDBERG HANS ,  ILLEK STEFAN

    IPC: H01S5/18 ,  H01S5/14

    CPC classification number: H01S5/18375 ,  H01S3/109 ,  H01S5/026 ,  H01S5/041 ,  H01S5/0654 ,  H01S5/1021 ,  H01S5/141 ,  H01S5/4031

    Abstract: The invention relates to a surface-emitting semiconductor laser comprising a semiconductor chip (1), which has a substrate (2), a DBR (Distributed Bragg Reflector) mirror (3) arranged on said substrate (2) and a sequence of epitaxial layers (4) arranged on the DBR mirror (3), said sequence having a radiation-emitting active layer (5), and an external resonator mirror (9) arranged outside of the semiconductor chip (1). The DBR mirror (3) and the substrate (2) are semi-reflective to the radiation (6) emitted by the active layer (5) and a rear side (14) of the substrate (2), facing away from the active layer (5), reflects the emitted radiation (6).

    Abstract translation: 它是一种表面发射半导体激光器包括一半导体芯片（1），包括基底（2），一个涂布在基板上（2）DBR镜（3）和一个上DBR镜（3）施加的层序列（4） 发射辐射的有源层（5）包括布置在外部谐振镜（9）上的半导体芯片（1）的外侧。 该DBR镜（3）和所述基板（2）射出的那些有源层（5）的辐射（6）部分透射和面对从一个远离所述基板（2）的有源层（5）后侧（14） 反射发射的辐射（6）。

    5.
    发明专利
    未知

    公开(公告)号：DE102008052376A1

    公开(公告)日：2010-04-22

    申请号：DE102008052376

    申请日：2008-10-20

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： LINDBERG HANS

    IPC: H01S5/14 ,  G02F1/37 ,  H01S3/10 ,  H01S5/183

    Abstract: The invention relates to a laser arrangement (1) comprising an active region (20) for generating radiation of a fundamental wavelength, a resonator (3), and an optically non-linear element (4) with a crystal axis (40). A polarisation-selective element (5) is formed inside the resonator (3), such that a polarisation of the radiation with the fundamental wavelength propagating in the resonator has a privileged direction. The optically non-linear element (4) is provided for at least partially converting the radiation with the fundamental wavelength into frequency-converted radiation. The optically non-linear element is also provided for a quasi-phase-matching of the radiation with the fundamental wavelength to the frequency-converted radiation. The crystal axis (40) of the optically non-linear element (4) forms an acute angle with the privileged direction.

    Heizvorrichtung, Verfahren und System zur Herstellung von Halbleiterchips im Waferverbund
    6.
    发明专利
    Heizvorrichtung, Verfahren und System zur Herstellung von Halbleiterchips im Waferverbund 未知

    公开(公告)号：DE102016119328A1

    公开(公告)日：2018-04-12

    申请号：DE102016119328

    申请日：2016-10-11

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： LINDBERG HANS

    IPC: H01L21/324 ,  H01L21/67

    Abstract: Es wird eine Heizvorrichtung (100) zur Herstellung von Halbleiterchips im Waferverbund (201) angegeben, aufweisend eine Heizebene (E1), die bei der Herstellung von Halbleiterchips parallel zu einer Ebene (E2) der Halbleiterchips im Waferverbund (201) anordenbar ist. Die Heizvorrichtung (100) weist ferner ein erstes Heizelement (110) auf, das sich im Wesentlichen radial bezüglich eines Bezugspunkts (x) in der Heizebene (E1) erstreckt. Darüber hinaus werden ein korrespondierendes Verfahren und System (300) zur Herstellung von Halbleiterchips im Waferverbund (201) angegeben.

    8.
    发明专利
    未知

    公开(公告)号：DE102007053296A1

    公开(公告)日：2009-03-12

    申请号：DE102007053296

    申请日：2007-11-08

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： LINDBERG HANS ,  ILLEK STEFAN

    IPC: H01S5/10 ,  H01S5/04

    Abstract: The device has a semiconductor laser chip formed as a pumping radiation source and an edge emitter. The chip has an active layer for emitting electromagnetic radiations. An angular reflector (1) is arranged in the chip for forming a resonator (10) for the radiations emitted by the layer. The reflector has two reflective surfaces (14, 15) arranged at an angle between 70 and 90 degrees to each other. The radiations impinge at the surface (14) as incident radiations (3), and are reflected from the surface (14) to the surface (15).

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