公开(公告)号：JP2009194388A

公开(公告)日：2009-08-27

申请号：JP2009031414

申请日：2009-02-13

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： DACHS JUERGEN ,  ILLEK STEFAN ,  SCHULZ ROLAND ,  SCHWARZ THOMAS ,  SINGER FRANK ,  UNOLD HEIKO

IPC: H01S5/022

CPC classification number: H01S5/0201

Abstract: PROBLEM TO BE SOLVED: To manufacture exceptionally compact semiconductor lasers in high-volume. SOLUTION: A method of manufacturing a plurality of semiconductor lasers 100 includes (a) a step of preparing a supporting wafer 30, (b) a step of forming a complex 70 by fixing a plurality of semiconductor laser chips 4 to the surface 31 of the supporting wafer 30, and (c) a step of forming a plurality of semiconductor lasers 100 by dividing the complex 70. The semiconductor laser 100 has a fixing block 3 and at least one semiconductor laser chip 4. The fixing block 3 has a fixing surface 13, and the fixing surface 13 is extended substantially perpendicularly to the surface 12 of the fixing block 3. The semiconductor laser chip 4 is arranged on the fixing block 3, and the fixing surface 13 is formed when the complex 70 is divided. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：制造大容量的非常紧凑的半导体激光器。 解决方案：制造多个半导体激光器100的方法包括（a）制备支撑晶片30的步骤，（b）通过将多个半导体激光芯片4固定在表面上来形成复合体70的步骤 31，并且（c）通过分开复合体70形成多个半导体激光器100的步骤。半导体激光器100具有固定块3和至少一个半导体激光芯片4.固定块3具有 固定表面13和固定表面13基本上垂直于固定块3的表面12延伸。半导体激光芯片4设置在固定块3上，并且当复合体70被分割时形成固定表面13 。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：KR20180008617A

公开(公告)日：2018-01-24

申请号：KR20177035922

申请日：2016-05-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GOLDBACH MATTHIAS ,  GROETSCH STEFAN ,  HOLZ JUERGEN ,  ILLEK STEFAN

IPC: H01L25/075 ,  H01L25/16

CPC classification number: H01L25/167 ,  H01L25/0753 ,  H01L2224/48137 ,  H01L2224/49171

Abstract: 본발명은다수의반도체소자들을포함하는광원에관한것이고, 여기서반도체소자는다수의발광다이오드들을갖고, 다이오드들은반도체소자상에적어도하나의열의미리결정된그리드내에배열되고, 개별다이오드들을제어하기위한제어회로가반도체소자상에배열된다. 본발명은또한다수의발광다이오드들을갖는반도체소자에관한것이고, 여기서다이오드들은반도체소자상에적어도하나의열의미리결정된그리드내에배열되고, 개별다이오드들을제어하기위한제어회로가반도체소자상에배열되고, 제어회로는다이오드들을개별적으로제어하도록설계된다.

Abstract translation: 本发明涉及一种光源，包括多个半导体元件，其中，所述半导体器件具有多个发光二极管，所述二极管被布置在预定的网格至少一排在半导体元件上，用于控制各个二极管的控制 电路布置在半导体元件上。 本发明还涉及一种具有多个发光二极管，其中所述二极管被布置在至少一个列中的半导体器件中，半导体元件上的预定网格，用于控制各个二极管的控制电路被布置在半导体元件上， 控制电路设计用于单独控制二极管。

公开(公告)号：JP2009071307A

公开(公告)日：2009-04-02

申请号：JP2008231300

申请日：2008-09-09

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： LINDBERG HANS ,  ILLEK STEFAN

IPC: H01S5/14 ,  H01S5/183

CPC classification number: H01S5/026 ,  H01S5/041 ,  H01S5/1071 ,  H01S5/1085 ,  H01S5/183 ,  H01S5/4025 ,  H01S5/4056

Abstract: PROBLEM TO BE SOLVED: To prevent the generation of shading in an emission profile.
SOLUTION: A semiconductor laser device including at least one semiconductor laser chip is provided, wherein the semiconductor laser chip contains an active layer that emits electromagnetic radiation. Further, at least one corner reflector 1 is formed in the semiconductor laser chip. The corner reflector 1 has first and second reflective surfaces 14, 15, wherein the first and second reflection surfaces 14, 15 are arranged at an angle of less than 90 degrees with respect to one another. This results in an improved emission characteristic of radiation emitted from the semiconductor laser device.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了防止在发射轮廓中产生阴影。 解决方案：提供了包括至少一个半导体激光器芯片的半导体激光器件，其中半导体激光器芯片包含发射电磁辐射的有源层。 此外，在半导体激光芯片中形成至少一个角部反射体1。 拐角反射体1具有第一和第二反射表面14,15，其中第一和第二反射表面14,15相对于彼此以小于90度的角度布置。 这导致从半导体激光器件发射的辐射的改进的发射特性。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007189242A

公开(公告)日：2007-07-26

申请号：JP2007061973

申请日：2007-03-12

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： ILLEK STEFAN ,  PLOESSL ANDREAS ,  STREUBEL KLAUS ,  WEGLEITER WALTER ,  WIRTH RALPH

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10 ,  H01L33/20 ,  H01L33/30

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip with improved optical output which can be manufactured by a thin-film technique, and a method for manufacturing it. SOLUTION: A thin-film active layer is processed into a plurality of mesa shapes, and an isolation layer and a metalized layer having reflexivity are formed over the surface of the mesa. Further, the thin-film active layer is mounted on another supporting substrate, and the thin-film active layer is separated from a growth substrate. By reflexing the light generated from an active zone in the thin-film active layer by the isolation layer and the metalized layer formed on the surface of the mesa, luminous efficiency is improved. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供可以通过薄膜技术制造的具有改进的光输出的半导体芯片及其制造方法。 解决方案：将薄膜活性层加工成多个台面形状，并且在台面的表面上形成具有反射性的隔离层和金属化层。 此外，薄膜有源层安装在另一个支撑基板上，并且薄膜有源层与生长基板分离。 通过隔离层和形成在台面表面上的金属化层反射薄膜有源层中的有源区产生的光，发光效率提高。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006287226A

公开(公告)日：2006-10-19

申请号：JP2006094778

申请日：2006-03-30

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： PLOESSL ANDREAS ,  ILLEK STEFAN ,  GROLIER VINCENT

IPC: H01L33/62

CPC classification number: H01L24/83 ,  H01L24/29 ,  H01L24/33 ,  H01L33/62 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/157 ,  H01L2924/1579 ,  H01L2924/3025 ,  H01L2924/01083 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip having a layer sequence that is improved and excellent in the respect of improving oxidation protection of solder layers in particular, which is regulated for forming solder joints.
SOLUTION: A semiconductor chip is provided with a layer sequence regulated for forming solder joints, in which this layer sequence further has solder layers and an oxidation protection layer following the solder layers when looked at in relation to the semiconductor chip. A barrier layer is provided between the solder layers and the oxidation protection layer.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种半导体芯片，其具有在改进焊料层的氧化保护的方面得到改进且优异的层序，特别是对于形成焊点进行调节。 解决方案：半导体芯片设置有用于形成焊点的层序列，其中当与半导体芯片相关时，该层序还具有焊料层和跟随焊料层的氧化保护层。 阻焊层设置在焊料层和氧化保护层之间。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2011049600A

公开(公告)日：2011-03-10

申请号：JP2010270229

申请日：2010-12-03

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： WIRTH RALPH ,  BRUNNER HERBERT ,  ILLEK STEFAN ,  EISSLER DIETER

IPC: H01L33/02 ,  H01L31/0224 ,  H01L31/10 ,  H01L33/38

CPC classification number: H01L31/022408 ,  H01L31/022416 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/382 ,  H01L2224/16225

Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric element, a device having a number of the photoelectric elements which can be easily manufactured at a low cost, and an easy manufacturing method of the photoelectric element. SOLUTION: A photoelectric element 1 comprises an active zone and a semiconductor functional region 2 having a main extension direction in a lateral direction. The semiconductor functional region has at least one hole passing through the active zone, and a connection conductor material is disposed in a region of the hole. The connection conductor material is electrically insulated from the active zone at least in a partial region of the hole. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种光电元件，具有可以容易地以低成本制造的多个光电元件的装置和光电元件的容易的制造方法。 解决方案：光电元件1包括有源区和在横向上具有主延伸方向的半导体功能区2。 半导体功能区域具有通过有源区域的至少一个孔，并且连接导体材料设置在孔的区域中。 连接导体材料至少在孔的部分区域中与活性区电绝缘。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009065182A

公开(公告)日：2009-03-26

申请号：JP2008264252

申请日：2008-10-10

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： EISERT DOMINIK ,  ILLEK STEFAN ,  WOLFGANG SCHMIDT

IPC: H01L33/20 ,  H01S5/022

CPC classification number: H01L33/20 ,  H01L23/3677 ,  H01L24/29 ,  H01L24/83 ,  H01L24/95 ,  H01L2224/29014 ,  H01L2224/29124 ,  H01L2224/29164 ,  H01L2224/29169 ,  H01L2224/83203 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To reduce or compensate thermal stresses in a semiconductor element, which arise as a result of temperature changes during processing and during operation and on account of different expansion coefficients of a semiconductor and a carrier substrate. SOLUTION: In a method of producing the semiconductor element having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations, and a vertically or horizontally patterned carrier substrate, the carrier substrate is patterned in such a way that the thermal stresses are reduced or compensated sufficiently to ensure that the element does not fail. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：减少或补偿半导体元件中由于处理期间和操作期间的温度变化以及由于半导体和载体衬底的不同膨胀系数引起的热应力。 解决方案：在制造具有发光半导体层或发光半导体元件，两个接触位置以及垂直或水平图案化的载体衬底的半导体元件的方法中，以这种方式图案化载体衬底 热应力被充分降低或补偿，以确保元件不会失效。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2005167239A

公开(公告)日：2005-06-23

申请号：JP2004340701

申请日：2004-11-25

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： GROETSCH STEFAN ,  ILLEK STEFAN ,  PLOESSL ANDREAS ,  HAHN BERTHOLD

IPC: H01L23/13 ,  H01L23/15 ,  H01L23/367 ,  H01L23/373 ,  H01L33/00 ,  H01L33/62 ,  H01L33/64 ,  H01S5/02 ,  H01S5/183

CPC classification number: H01L33/641 ,  H01L21/6835 ,  H01L23/15 ,  H01L23/3677 ,  H01L24/97 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/62 ,  H01L33/647 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2224/83048 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a carrier layer for a semiconductor continuous layer, which improves conformity to the semiconductor continuous layer concerning thermal expansion coefficient property. SOLUTION: An electric insulation layer 2 contains AIN or ceramics in the case of the carrier layer 1 for the semiconductor continuous layer 7 including the electric insulation layer 2 by the carrier layer 1. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种半导体连续层的载体层，其提高了与半导体连续层的热膨胀系数性质的一致性。 解决方案：在载体层1的包含电绝缘层2的半导体连续层7的载体层1的情况下，电绝缘层2含有AIN或陶瓷。版权所有（C）2005， JPO＆NCIPI

公开(公告)号：JP2004235649A

公开(公告)日：2004-08-19

申请号：JP2004021828

申请日：2004-01-29

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： ILLEK STEFAN ,  STAUSS PETER ,  PLOESSL ANDREAS ,  DIEPOLD GUDRUN ,  PIETZONKA INES ,  STEIN WILHELM ,  WIRTH RALPH ,  WEGLEITER WALTER

IPC: H01S5/042 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

Abstract: PROBLEM TO BE SOLVED: To make directly formable an electric contact area on an n-conductive AlGaInP based or AlGaInAs based semiconductor layer.
SOLUTION: A method includes: adjusting by epitaxial growth semiconductor layers having the n-conductive AlGaInP based or AlGaInAs based outer layers and an active zone that emits electromagnetic radiation; making an electric contact material having Au and at least one doping substance adhered to the outer layer; and tempering the outer layer. The doping substance used in the step of making the electric contact material adhered to the outer layer contains at least one element selected from the group consisting of Ge, Si, Sn, and Te.
COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：在基于n导电AlGaInP或AlGaInAs的半导体层上直接形成电接触区域。 解决方案：一种方法包括：通过具有基于n导电AlGaInP或AlGaInAs的外层的外延生长半导体层和发射电磁辐射的有源区进行调整; 制造具有Au的电接触材料和至少一种掺杂物质粘附到外层; 并回火外层。 在使电接触材料附着于外层的步骤中使用的掺杂物质含有选自Ge，Si，Sn和Te中的至少一种元素。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：WO2009109166A3

公开(公告)日：2009-11-19

申请号：PCT/DE2009000268

申请日：2009-02-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  LINDBERG HANS ,  ILLEK STEFAN

Inventor： LINDBERG HANS ,  ILLEK STEFAN

IPC: H01S5/183 ,  H01S5/026 ,  H01S5/04

CPC classification number: H01S5/0657 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18341 ,  H01S5/18383 ,  H01S5/34

Abstract: The invention relates to a surface-emitting semiconductor laser comprising a semiconductor base (10) having an active zone (1) with a quantum well structure, the quantum well structure containing a plurality of quantum wells (2) which are formed by respective quantum well layers (3) arranged between barrier layers (4). The surface-emitting semiconductor laser further comprises a pump laser (6) which is monolithically integrated into the semiconductor base (10) and which emits pump radiation for optically pumping the active zone (1), the pump radiation forming a mode profile (21) in the semiconductor base (10) and the quantum wells (2) being interspaced in such a manner that they are arranged in the zone of a maximum (22) of the mode profile (21) of the pump radiation.

Abstract translation: 它是一种表面发射半导体激光器包括具有（1）具有量子阱结构，其中该量子阱结构包括多个量子阱（2），其被布置在每个由一个阻挡层（4）之间的量子阱层的有源区的半导体本体（10）（3）形成 和在半导体本体中单片集成用于光学泵浦所述活性区（1）的泵辐射的发射指定（10）抽运激光器（6）。 泵浦辐射使得在半导体本体（10）和所述量子阱（2）的模式简档（21）彼此，使得其泵浦辐射都是在模式简档（21）的最大值（22）的区域中分别布置间隔开。