公开(公告)号：WO2021005052A1

公开(公告)日：2021-01-14

申请号：PCT/EP2020/069113

申请日：2020-07-07

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： MANGUM, Benjamin Daniel ,  O'BRIEN, David ,  GÖÖTZ, Britta

IPC: H01L25/075 ,  H01L33/50 ,  G02F1/13357

Abstract: A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel (1) comprising at least three sub-pixels (2, 3, 4), wherein a first sub-pixel (2) includes a first conversion element having a green phosphor, wherein a second sub-pixel (3) includes a second conversion element having a red phosphor and wherein a third sub-pixel (4) is free of a conversion element, the third sub-pixel configured to emit blue primary radiation, wherein each sub-pixel has an edge length of at most 100 pm.

公开(公告)号：WO2021185845A1

公开(公告)日：2021-09-23

申请号：PCT/EP2021/056699

申请日：2021-03-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： TREADWAY, Joseph ,  MANGUM, Benjamin Daniel ,  O'BRIEN, David

IPC: C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L51/50

Abstract: A semiconductor nanocrystal structure may include a core, an inner absorption shell surrounding the core, at least one emission shell surrounding the inner absorption shell, and an outer absorption shell surrounding the emission shell(s). The core may include a different material than the optional inner absorption shell and/or the outer absorption shell. The core may be less absorbent to electromagnetic radiation as compared to the optional inner absorption shell and/or the outer absorption shell, An optoelectronic device may include the semiconductor nanocrystal structure.

公开(公告)号：EP3017484B8

公开(公告)日：2018-10-24

申请号：EP14820485.2

申请日：2014-06-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： MANGUM, Benjamin Daniel ,  ZHAO, Weiwen ,  HALEY, Kari N. ,  KURTIN, Juanita N. ,  STOTT, Nathan Evan

IPC: H01L33/50 ,  C09K11/02 ,  C09K11/88

CPC classification number: C09K11/883 ,  C01B19/007 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/64 ,  C09K11/02 ,  H01L33/502

Abstract: Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a method of fabricating a semiconductor structure involves forming a mixture including a plurality of discrete semiconductor nanocrystals. Each of the plurality of discrete semiconductor nanocrystals is discretely coated by an insulator shell. The method also involves adding a base to the mixture to fuse the insulator shells of each of the plurality of discrete nanocrystals, providing an insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network. The base one such as, but not limited to, LiOH, RbOH, CsOH, MgOH, Ca(OH)2, Sr(OH)2, Ba(OH)2, (Me)4NOH, (Et)4NOH, or (Bu)4NOH.