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    SOUND TRANSDUCER AND MICROPHONE USING SAME
    3.
    发明公开
    SOUND TRANSDUCER AND MICROPHONE USING SAME 审中-公开
    MIKROFON DAMIT的SCHALLWANDLER

    公开(公告)号：EP2663093A1

    公开(公告)日：2013-11-13

    申请号：EP11854547.4

    申请日：2011-12-22

    Applicant: Omron Corporation ,  STMicroelectronics S.r.l.

    Inventor： KASAI, Takashi ,  SATO, Shobu ,  UCHIDA, Yuki ,  PADOVANI, Igino ,  DAVID, Filippo ,  CONTI, Sebastiano

    IPC: H04R19/04

    CPC classification number: H04R19/04 ,  B81B3/0021 ,  H04R1/023 ,  H04R1/086 ,  H04R3/00 ,  H04R3/005 ,  H04R19/005 ,  H04R19/016 ,  H04R31/00 ,  H04R2201/003 ,  H04R2499/11

    Abstract: Provided is an acoustic transducer (11) including: a semiconductor substrate (21); a vibrating membrane (23), provided above the semiconductor substrate (21), including a vibrating electrode (220); and a fixed membrane (23), provided above the semiconductor substrate (21), including a fixed electrode (230), the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode (220) and the fixed electrode (230), converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode (220) and the fixed electrode (230) is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

    Abstract translation: 提供一种声换能器（11），包括：半导体衬底（21）; 设置在半导体衬底（21）上方的振动膜（23），包括振动电极（220）; 以及设置在所述半导体衬底（21）上方的固定膜（23），所述固定膜（23）包括固定电极（230），所述声换能器根据所述振动电极（220）和所述固定电极（230）之间的电容的变化来检测声波 ），将声波转换为电信号，并输出电信号。 振动电极（220）和固定电极（230）中的至少一个被分成多个分割电极，并且多个分割电极输出电信号。

    ACOUSTIC TRANSDUCER, AND MICROPHONE USING THE ACOUSTIC TRANSDUCER
    4.
    发明公开
    ACOUSTIC TRANSDUCER, AND MICROPHONE USING THE ACOUSTIC TRANSDUCER 有权
    声学传感器和使用声学传感器的麦克风

    公开(公告)号：EP2579617A1

    公开(公告)日：2013-04-10

    申请号：EP11786478.5

    申请日：2011-05-10

    Applicant: Omron Corporation ,  STMicroelectronics S.r.l.

    Inventor： KASAI, Takashi ,  UCHIDA, Yuki ,  HORIMOTO, Yasuhiro ,  CONTI, Sebastiano

    IPC: H04R19/04

    CPC classification number: H04R3/00 ,  H04R19/016

    Abstract: An acoustic sensor (11) includes: a semiconductor substrate; a vibrating membrane (22), formed above the semiconductor substrate, which includes a vibrating electrode (22a); and a fixed membrane (23), formed on an upper surface of the semiconductor substrate, which includes a fixed electrode (23a), the acoustic sensor (11) detecting an acoustic wave according to a change in capacitance between the vibrating electrode (22a) and the fixed electrode (23a). The fixed membrane (23) has a plurality of sound hole portions (32) formed therein in order to allow the acoustic wave to reach the vibrating membrane (22) from outside, and the fixed electrode (23a) is formed so that a boundary of an edge portion (40) of the fixed electrode (23a) does not intersect the sound hole portions (32).

    Abstract translation: 声传感器（11）包括：半导体衬底; 振动膜（22），形成在所述半导体基板上方，其包括振动电极（22a）;振动膜 以及形成在所述半导体基板的上表面上的固定膜23，所述固定膜23包括固定电极23a，所述声学传感器11根据所述振动电极22a与所述振动电极之间的电容变化来检测声波， 和固定电极（23a）。 固定膜（23）具有形成在其中的多个音孔部（32），以允许声波从外部到达振动膜（22），并且固定电极（23a）形成为使得 固定电极（23a）的边缘部分（40）不与音孔部分（32）相交。

    CAPACITIVE TRANSDUCER AND ACOUSTIC SENSOR
    6.
    发明公开
    CAPACITIVE TRANSDUCER AND ACOUSTIC SENSOR 审中-公开
    电容式传感器和声学传感器

    公开(公告)号：EP3322201A1

    公开(公告)日：2018-05-16

    申请号：EP17762744.5

    申请日：2017-01-27

    Applicant: Omron Corporation

    Inventor： KASAI, Takashi ,  UCHIDA, Yuki

    IPC: H04R19/04

    Abstract: A technique maintains good frequency characteristics in detecting an acoustic sound, and prevents a vibration electrode film from deforming excessively under an excessively high pressure and thus from breaking. An acoustic sensor converts an acoustic vibration into a change in capacitance between a vibration electrode film (15) and a back plate (17) and detects the acoustic vibration. When a vibration electrode film (15) deforms under an excessively high pressure, an airflow channel defined by the protrusion (17b) and a part of the vibration electrode film (15) increases an area of air flow by relative movement of a protrusion (17b) integral with the back plate (17) and the vibration electrode film (15) to relieve pressure applied to the vibration electrode film (15).

    Abstract translation: 技术在检测声音时保持良好的频率特性，并且防止振动电极膜在过高的压力下过度变形并因此破裂。 声传感器将声振动转换为振动电极膜（15）和背板（17）之间的电容变化并检测声振动。 当振动电极膜（15）在过高的压力下变形时，由突起（17b）和振动电极膜（15）的一部分限定的气流通道通过突起（17b）的相对运动而增加气流的面积 ）与背板（17）和振动电极薄膜（15）整合以释放施加到振动电极薄膜（15）的压力。

    ACOUSTIC SENSOR AND MICROPHONE
    7.
    发明公开
    ACOUSTIC SENSOR AND MICROPHONE 有权
    阿拉斯加基斯先生在MIKROPHON

    公开(公告)号：EP2605545A1

    公开(公告)日：2013-06-19

    申请号：EP11788759.6

    申请日：2011-03-18

    Applicant: Omron Corporation

    Inventor： KASAI, Takashi

    IPC: H04R19/04

    CPC classification number: H04R23/00 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/15151 ,  H01L2924/16151 ,  H01L2924/16152 ,  H04R3/005 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006 ,  H04R2201/003 ,  H04R2410/03 ,  H01L2924/00014

    Abstract: Provided is an acoustic sensor capable of improving an S/N ratio of a sensor without preventing reduction in size of the sensor. A diaphragm 43 as a movable electrode plate is formed on the top surface of a silicon substrate 42. The diaphragm 43 has a rectangular form, and four corners and midsections of long sides of the diaphragm 43 are supported by anchors 46. A displacement of the diaphragm 43 is minimal on a line D that connects between the anchors 46 at the midsections of the long sides. A displacement maximal point G, at which a displacement is maximal, is present on each side of the line D, and the line D extends in a direction intersecting with a line connecting between the displacement maximal points G.

    Abstract translation: 提供了能够在不防止传感器的尺寸减小的情况下提高传感器的S / N比的声学传感器。 作为可动电极板的隔膜43形成在硅基板42的上表面上。隔膜43具有矩形形状，隔膜43的长边的四个角和中间部分被锚46支撑。 隔膜43在连接在长边的中心处的锚定件46之间的线D上是最小的。 在线D的每一侧存在位移最大点G，位移最大点G在线D的每一侧上存在，并且线D在与连接位移最大点G之间的线相交的方向上延伸。

    CAPACITIVE TRANSDUCER AND ACOUSTIC SENSOR
    9.
    发明公开
    CAPACITIVE TRANSDUCER AND ACOUSTIC SENSOR 审中-公开

    公开(公告)号：EP3328095A1

    公开(公告)日：2018-05-30

    申请号：EP17762758.5

    申请日：2017-01-31

    Applicant: Omron Corporation

    Inventor： KASAI, Takashi ,  NAKAGAWA, Yusuke

    IPC: H04R19/04 ,  B81B3/00 ,  H01L29/84

    Abstract: A technique prevents a vibration electrode film from deforming excessively and breaking in any direction under an excessively high pressure applied to an acoustic sensor. The acoustic sensor includes a back plate (37) facing an opening in a substrate, a vibration electrode film (35) facing the back plate (37) across a space, and a protrusion (37b) integral with and formed from the same member as the back plate (37). The vibration electrode film (35) has a through-hole as a pressure relief hole (35b), in which the protrusion (37b) is placed before the vibration electrode film (35) deforms. The pressure relief hole (35b) and the protrusion (37b) have a gap between them defining an airflow channel as a pressure relief channel. The protrusion (37b) includes a protrusion hole (37c) extending from a distal portion of the protrusion (37b) to a portion of the back plate (37) opposite to the protrusion (37b).

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