公开(公告)号：EP2579617B1

公开(公告)日：2017-04-12

申请号：EP11786478.5

申请日：2011-05-10

Applicant: Omron Corporation ,  STMicroelectronics S.r.l.

Inventor： KASAI, Takashi ,  UCHIDA, Yuki ,  HORIMOTO, Yasuhiro ,  CONTI, Sebastiano

IPC: H04R19/01

CPC classification number: H04R3/00 ,  H04R19/016

公开(公告)号：EP2579617A1

公开(公告)日：2013-04-10

申请号：EP11786478.5

申请日：2011-05-10

Applicant: Omron Corporation ,  STMicroelectronics S.r.l.

Inventor： KASAI, Takashi ,  UCHIDA, Yuki ,  HORIMOTO, Yasuhiro ,  CONTI, Sebastiano

IPC: H04R19/04

CPC classification number: H04R3/00 ,  H04R19/016

Abstract: An acoustic sensor (11) includes: a semiconductor substrate; a vibrating membrane (22), formed above the semiconductor substrate, which includes a vibrating electrode (22a); and a fixed membrane (23), formed on an upper surface of the semiconductor substrate, which includes a fixed electrode (23a), the acoustic sensor (11) detecting an acoustic wave according to a change in capacitance between the vibrating electrode (22a) and the fixed electrode (23a). The fixed membrane (23) has a plurality of sound hole portions (32) formed therein in order to allow the acoustic wave to reach the vibrating membrane (22) from outside, and the fixed electrode (23a) is formed so that a boundary of an edge portion (40) of the fixed electrode (23a) does not intersect the sound hole portions (32).

Abstract translation: 声传感器（11）包括：半导体衬底; 振动膜（22），形成在所述半导体基板上方，其包括振动电极（22a）;振动膜 以及形成在所述半导体基板的上表面上的固定膜23，所述固定膜23包括固定电极23a，所述声学传感器11根据所述振动电极22a与所述振动电极之间的电容变化来检测声波， 和固定电极（23a）。 固定膜（23）具有形成在其中的多个音孔部（32），以允许声波从外部到达振动膜（22），并且固定电极（23a）形成为使得 固定电极（23a）的边缘部分（40）不与音孔部分（32）相交。

公开(公告)号：EP2073272B1

公开(公告)日：2018-09-12

申请号：EP07791105.5

申请日：2007-07-20

Applicant: Omron Corporation

Inventor： KASAI, Takashi ,  HORIMOTO, Yasuhiro ,  KATO, Fumihito ,  MUNECHIKA, Masaki ,  WAKABAYASHI, Shuichi ,  TAKAHASHI, Toshiyuki ,  INUGA, Masayuki

IPC: B81C1/00 ,  H04R19/04

CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2203/0127 ,  B81B2203/0353 ,  H04R19/005 ,  H04R19/04

Abstract: A protective film (20) of an SiO2 thin film is formed on a front surface of an Si substrate (12), and a part of the protective film (20) is removed to form an etching window (22). A sacrifice layer (23) of polycrystalline Si is formed in the etching window (22). A protective film (24) of SiO2 is formed on the front surface of the Si substrate (12) from the top of the sacrifice layer (23), and a thin film (13) as an element formed of polycrystalline Si is further formed on the protective film (24). A backside etching window (26) is opened in a protective film (21) on the back side of the Si substrate (12). The Si substrate (12) is soaked in TMAH to perform crystal anisotropic etching in the Si substrate (12) through the backside etching window (26) to provide a through-hole (14) in the Si substrate (12).; When the sacrifice layer (23) is exposed to the interior of the through-hole (14), the sacrifice layer (23) is etching-removed to provide a gap (19) between the protective film (24) and the Si substrate (12) and crystal anisotropic etching of the Si substrate (12) is carried out from its front side and backside.

公开(公告)号：EP2680614A1

公开(公告)日：2014-01-01

申请号：EP11859321.9

申请日：2011-03-18

Applicant: Omron Corporation

Inventor： HORIMOTO, Yasuhiro ,  NAKAGAWA, Yusuke ,  INOUE, Tadashi ,  TAKAHASHI, Toshiyuki

IPC: H04R31/00 ,  H04R19/04

CPC classification number: B81C1/00261 ,  H01L21/304 ,  H01L21/50 ,  H01L24/80 ,  H04R19/005 ,  H04R31/00 ,  H04R2201/003

Abstract: A plurality of acoustic sensors (51) is provided on an Si wafer (73). A plurality of interposers (52) having a cavity (70), penetrating electrodes (65, 66), and the like is integrally formed using an Si wafer (74). That surface of the acoustic sensors (51) which is opposite the Si wafer (73) is joined and integrated with the interposers (52). The Si wafer (73) of the acoustic sensors (51) is then polished and the thickness of the Si wafer (73) is reduced in a state in which the acoustic sensors (51) and the interposers (52) are joined and integrated. The Si wafer (73) and the separate acoustic sensors (51), the sensors being divided into separate elements while remaining joined, are then installed in a package together with a signal processing circuit.

Abstract translation: 声学传感器（51）中的多个设置在硅晶片（73）上。 内插器的具有腔体（70）的多个（52），贯通电极（65，66），和类似物，使用硅晶片（74）一体地形成。 声音传感器（51），该表面的所有这是硅晶片（73）相对的接合，并与间posers（52）集成在一起。 声音传感器（51）的硅晶片（73）进行抛光和Si晶片的厚度（73）在其中声音传感器（51）和帧间posers（52）连接并一体化的状态被降低。 硅晶片（73）和单独的声音传感器（51），所述传感器被划分为单独的元件，同时保持连接，然后用信号处理电路安装在一个封装起来。

公开(公告)号：EP2544461A1

公开(公告)日：2013-01-09

申请号：EP11770671.3

申请日：2011-03-16

Applicant: Omron Corporation

Inventor： NAKAGAWA, Yusuke ,  HORIMOTO, Yasuhiro ,  INOUE, Tadashi ,  TAKAHASHI, Toshiyuki

IPC: H04R19/04

CPC classification number: H04R1/04 ,  H01L2224/16225 ,  H04R1/06 ,  H04R19/04

Abstract: Provided is a microphone capable of reducing a plane area seen from above, and further increasing a capacity of a back chamber of an acoustic sensor. An interposer 52 is mounted on a top surface of a circuit board 43, and an acoustic sensor 51 is mounted on the top surface thereof. A signal processing circuit 53 is accommodated in a space 70 provided in the interposer 52, and mounted on the circuit board 43. The acoustic sensor 51 is connected to the circuit board 43 through a wiring structure provided in the interposer 52. The acoustic sensor 51, the interposer 52 and the like are covered by a cover 42 put on the top surface of the circuit board 43. In the cover 42, a sound introduction hole 48 is opened in a position opposed to the front chamber of the acoustic sensor 51. The interposer 52 is formed with a ventilation notch 71 for acoustically communicating a space below a diaphragm 56 of the acoustic sensor 51 with a space inside the cover 42 and outside the interposer 52.

Abstract translation: 提供了能够减少从上方看到的平面区域并进一步增加声学传感器的后室的容量的麦克风。 插入器52安装在电路板43的顶表面上，声传感器51安装在其顶表面上。 信号处理电路53容纳在设置在插入器52中的空间70中，并安装在电路板43上。声传感器51通过设置在插入器52中的布线结构连接到电路板43.声传感器51 插入器52等被放置在电路板43的上表面上的盖42覆盖。在盖42中，声音引入孔48在与声传感器51的前室相对的位置打开。 插入器52形成有通气凹口71，用于将声学传感器51的隔膜56下方的空间与壳体42内部的空间和插入件52外部隔开。

公开(公告)号：EP2073272A1

公开(公告)日：2009-06-24

申请号：EP07791105.5

申请日：2007-07-20

Applicant: Omron Corporation

Inventor： KASAI, Takashi ,  HORIMOTO, Yasuhiro ,  KATO, Fumihito ,  MUNECHIKA, Masaki ,  WAKABAYASHI, Shuichi ,  TAKAHASHI, Toshiyuki ,  INUGA, Masayuki

IPC: H01L29/84 ,  H01L21/306 ,  H04R19/04 ,  H04R31/00

CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2203/0127 ,  B81B2203/0353 ,  H04R19/005 ,  H04R19/04

Abstract: A protective film (20) of an SiO2 thin film is formed on a front surface of an Si substrate (12), and a part of the protective film (20) is removed to form an etching window (22). A sacrifice layer (23) of polycrystalline Si is formed in the etching window (22). A protective film (24) of SiO2 is formed on the front surface of the Si substrate (12) from the top of the sacrifice layer (23), and a thin film (13) as an element formed of polycrystalline Si is further formed on the protective film (24). A backside etching window (26) is opened in a protective film (21) on the back side of the Si substrate (12). The Si substrate (12) is soaked in TMAH to perform crystal anisotropic etching in the Si substrate (12) through the backside etching window (26) to provide a through-hole (14) in the Si substrate (12).; When the sacrifice layer (23) is exposed to the interior of the through-hole (14), the sacrifice layer (23) is etching-removed to provide a gap (19) between the protective film (24) and the Si substrate (12) and crystal anisotropic etching of the Si substrate (12) is carried out from its front side and backside.

Abstract translation: 在Si衬底（12）的前表面上形成SiO 2薄膜的保护膜（20），并且去除保护膜（20）的一部分以形成蚀刻窗口（22）。 在蚀刻窗（22）中形成多晶Si的牺牲层（23）。 从牺牲层（23）的顶部在Si衬底（12）的前表面上形成SiO 2的保护膜（24），并且作为由多晶Si形成的元件的薄膜（13）进一步形成在 保护膜（24）。 在Si衬底（12）的背侧上的保护膜（21）中打开背面蚀刻窗（26）。 Si衬底（12）浸泡在TMAH中以通过背面蚀刻窗（26）在Si衬底（12）中进行晶体各向异性蚀刻，以在Si衬底（12）中提供通孔（14）。 当牺牲层（23）暴露于通孔（14）的内部时，牺牲层（23）被蚀刻去除，以在保护膜（24）和Si衬底（24）之间提供间隙（19） 12）和Si衬底（12）的晶体各向异性蚀刻从其前侧和后侧进行。

公开(公告)号：EP2680614B1

公开(公告)日：2019-08-28

申请号：EP11859321.9

申请日：2011-03-18

Applicant: Omron Corporation

Inventor： HORIMOTO, Yasuhiro ,  NAKAGAWA, Yusuke ,  INOUE, Tadashi ,  TAKAHASHI, Toshiyuki

IPC: H04R31/00 ,  H04R19/04 ,  H04R19/00 ,  B81C1/00

公开(公告)号：EP2544461B8

公开(公告)日：2016-01-20

申请号：EP11770671.3

申请日：2011-03-16

Applicant: Omron Corporation

Inventor： NAKAGAWA, Yusuke ,  HORIMOTO, Yasuhiro ,  INOUE, Tadashi ,  TAKAHASHI, Toshiyuki

IPC: H04R1/04 ,  H04R1/06 ,  H04R19/04

CPC classification number: H04R1/04 ,  H01L2224/16225 ,  H04R1/06 ,  H04R19/04

Abstract: Provided is a microphone capable of reducing a plane area seen from above, and further increasing a capacity of a back chamber of an acoustic sensor. An interposer 52 is mounted on a top surface of a circuit board 43, and an acoustic sensor 51 is mounted on the top surface thereof. A signal processing circuit 53 is accommodated in a space 70 provided in the interposer 52, and mounted on the circuit board 43. The acoustic sensor 51 is connected to the circuit board 43 through a wiring structure provided in the interposer 52. The acoustic sensor 51, the interposer 52 and the like are covered by a cover 42 put on the top surface of the circuit board 43. In the cover 42, a sound introduction hole 48 is opened in a position opposed to the front chamber of the acoustic sensor 51. The interposer 52 is formed with a ventilation notch 71 for acoustically communicating a space below a diaphragm 56 of the acoustic sensor 51 with a space inside the cover 42 and outside the interposer 52.

公开(公告)号：EP2544461B1

公开(公告)日：2015-10-21

申请号：EP11770671.3

申请日：2011-03-16

Applicant: Omron Corporation

Inventor： NAKAGAWA, Yusuke ,  HORIMOTO, Yasuhiro ,  INOUE, Tadashi ,  TAKAHASHI, Toshiyuki

IPC: H04R1/04 ,  H04R1/06 ,  H04R19/04

CPC classification number: H04R1/04 ,  H01L2224/16225 ,  H04R1/06 ,  H04R19/04

Abstract: Provided is a microphone capable of reducing a plane area seen from above, and further increasing a capacity of a back chamber of an acoustic sensor. An interposer 52 is mounted on a top surface of a circuit board 43, and an acoustic sensor 51 is mounted on the top surface thereof. A signal processing circuit 53 is accommodated in a space 70 provided in the interposer 52, and mounted on the circuit board 43. The acoustic sensor 51 is connected to the circuit board 43 through a wiring structure provided in the interposer 52. The acoustic sensor 51, the interposer 52 and the like are covered by a cover 42 put on the top surface of the circuit board 43. In the cover 42, a sound introduction hole 48 is opened in a position opposed to the front chamber of the acoustic sensor 51. The interposer 52 is formed with a ventilation notch 71 for acoustically communicating a space below a diaphragm 56 of the acoustic sensor 51 with a space inside the cover 42 and outside the interposer 52.