公开(公告)号：DE60122872T2

公开(公告)日：2007-04-19

申请号：DE60122872

申请日：2001-05-02

Applicant: QIMONDA AG ,  IBM

Inventor： WANG YUN-YU ,  JAMMY RAJARAO ,  KIMBALL J ,  KOTECKI E ,  LIAN JENNY ,  LIN CHENTING ,  MILLER A ,  NAGEL NICOLAS ,  SHEN HUA ,  WILDMAN S

IPC: H01L21/02 ,  H01L27/108 ,  H01L21/8242

Abstract: A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.

公开(公告)号：JP2000169831A

公开(公告)日：2000-06-20

申请号：JP26049599

申请日：1999-09-14

Applicant: SIEMENS AG ,  IBM

Inventor： LIN CHENTING ,  WANG JIUN-FANG ,  JAMIN FEN FEN ,  RAMACHANDRAN RAVIKUMAR

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/302 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To obtain the subject composition capable of reducing the dishing on the surface of a wide patterned buried metal in a conductor, when an article having the patterned metal in the conductor is subjected to chemical and mechanical polishing treatments by adding a viscosity-increasing agent to a slurry containing a polishing agent in stead of a part of deionized water in the slurry. SOLUTION: A viscosity-improving agent is added in stead of a part of deionized water in a slurry containing a polishing material. The viscosity- improving agent is preferably glycerol and is replaced with 0.1-50 vol.% of the deionized water. The polishing material is preferably alumina. The composition preferably has a viscosity of 3.4-12 cps. When a conductor to be processed is treated, it is preferable that the surface of the conductor is exposed to the composition.

公开(公告)号：DE69935291D1

公开(公告)日：2007-04-12

申请号：DE69935291

申请日：1999-07-30

Applicant: SIEMENS AG ,  IBM

Inventor： BOGGS KARL E ,  LIN CHENTING ,  NEUTZEL JOACHIM F ,  PLOESSL ROBERT ,  RONAY MARIA ,  SCHNABEL FLORIAN ,  STEPHENS JEREMY K

IPC: H01L21/304 ,  H01L21/3105 ,  B24B37/013 ,  B24B49/12 ,  H01L21/306 ,  H01L21/66 ,  H01L23/544

Abstract: The method of polishing metal layers on wafers comprises the steps of: using a chemical-mechanical polisher (50) to polish the metal layers (32) to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas (80), and adjusting the operation of the chemical-mechanical polisher (50) in response to the inspection of the indicator areas (80). The indicator areas (80) may include macroblocks comprised of a multitude of individual blocks (82). The wafer may be inspected by optically identifying the polishing state of the blocks (82) in the macroblock (80). Additionally, the process may be automated for mass production. A feedback loop to the polisher can be formed where data from optical inspection of macroblocks on a polished wafer can be immediately fed back to the polisher in order to adjust process parameters.

公开(公告)号：DE10243468A1

公开(公告)日：2003-05-15

申请号：DE10243468

申请日：2002-09-19

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： LIAN JINGYU ,  LIN CHENTING ,  SAENGER KATHERINE ,  WONG KWONG HON

IPC: C23C16/40 ,  C23C16/56 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3105 ,  H01L21/8239

Abstract: A method for forming a crystalline dielectric layer deposits an amorphous metallic oxide dielectric layer on a surface. The amorphous metallic oxide dielectric layer is treated with a plasma at a temperature of less than or equal to 400 degrees Celsius to form a crystalline layer.

公开(公告)号：DE60122872D1

公开(公告)日：2006-10-19

申请号：DE60122872

申请日：2001-05-02

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： WANG YUN-YU ,  JAMMY RAJARAO ,  KIMBALL J ,  KOTECKI E ,  LIAN JENNY ,  LIN CHENTING ,  MILLER A ,  NAGEL NICOLAS ,  SHEN HUA ,  WILDMAN S

IPC: H01L21/02 ,  H01L27/108 ,  H01L21/8242

Abstract: A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.

公开(公告)号：DE69935291T2

公开(公告)日：2007-11-22

申请号：DE69935291

申请日：1999-07-30

Applicant: SIEMENS AG ,  IBM

Inventor： BOGGS KARL E ,  LIN CHENTING ,  NEUTZEL JOACHIM F ,  PLOESSL ROBERT ,  RONAY MARIA ,  SCHNABEL FLORIAN ,  STEPHENS JEREMY K

IPC: H01L21/304 ,  H01L21/3105 ,  B24B37/013 ,  B24B49/12 ,  H01L21/306 ,  H01L21/66 ,  H01L23/544

Abstract: The method of polishing metal layers on wafers comprises the steps of: using a chemical-mechanical polisher (50) to polish the metal layers (32) to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas (80), and adjusting the operation of the chemical-mechanical polisher (50) in response to the inspection of the indicator areas (80). The indicator areas (80) may include macroblocks comprised of a multitude of individual blocks (82). The wafer may be inspected by optically identifying the polishing state of the blocks (82) in the macroblock (80). Additionally, the process may be automated for mass production. A feedback loop to the polisher can be formed where data from optical inspection of macroblocks on a polished wafer can be immediately fed back to the polisher in order to adjust process parameters.