公开(公告)号：CA2720966A1

公开(公告)日：2009-11-12

申请号：CA2720966

申请日：2009-04-27

Applicant: QUALCOMM INC

Inventor： KASKOUN KENNETH ,  GU SHIQUN ,  NOWAK MATTHEW M

IPC: H01L25/065 ,  H01L23/367 ,  H01L23/373

Abstract: By filling an air gap between tiers (31,32) of a stacked IC device with a thermally conductive material (320) heat generated at one or more locations within one of the tiers can be laterally displaced. The lateral displacement of the heat can be along the full length of the tier and the thermal materia can be electrically insulating. Through silicon-vias (331) can be constructe at certain locations to assist in heat dissipation away from thermally troubled locations (310).

公开(公告)号：CA2720966C

公开(公告)日：2015-06-30

申请号：CA2720966

申请日：2009-04-27

Applicant: QUALCOMM INC

Inventor： KASKOUN KENNETH ,  GU SHIQUN ,  NOWAK MATTHEW M

IPC: H01L25/065 ,  H01L23/367 ,  H01L23/373

Abstract: By filling an air gap between tiers (31,32) of a stacked IC device with a thermally conductive material (320) heat generated at one or more locations within one of the tiers can be laterally displaced. The lateral displacement of the heat can be along the full length of the tier and the thermal materia can be electrically insulating. Through silicon-vias (331) can be constructe at certain locations to assist in heat dissipation away from thermally troubled locations (310).

公开(公告)号：MX2010011848A

公开(公告)日：2010-11-30

申请号：MX2010011848

申请日：2009-04-27

Applicant: QUALCOMM INC

Inventor： GU SHIQUN ,  KASKOUN KENNETH ,  NOWAK MATTHEW M

IPC: H01L23/367 ,  H01L25/065 ,  H01L23/373

Abstract: Mediante el relleno de un espacio de aire entre las capas (31,32) de un dispositivo IC apilado con un material térmicamente conductor (320), se puede desplazar lateralmente el calor generado en una o más ubicaciones dentro de una de las capas. El desplazamiento lateral del calor puede ser a lo largo de la longitud total de la capa y el material térmico se puede aislar eléctricamente. En ciertas ubicaciones se pueden construir interconexiones de silicio continuas (331) para ayudar en la disipación de calor lejos de las ubicaciones (310) con problemas térmicos.

公开(公告)号：WO2012027423A3

公开(公告)日：2012-04-26

申请号：PCT/US2011048885

申请日：2011-08-24

Applicant: QUALCOMM INC ,  GU SHIQUN ,  NOWAK MATTHEW M ,  SRINIVASAN ANAND

Inventor： GU SHIQUN ,  NOWAK MATTHEW M ,  SRINIVASAN ANAND

IPC: H01L23/48 ,  G11C11/4076

CPC classification number: G11C11/4076 ,  H01L23/481 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/00

Abstract: External memory having a high density, high latency memory block; and a low density, low latency memory block. The two memory blocks may be separately accessed by one or more processing functional units. The access may be a direct memory access, or by way of a bus or fabric switch. Through-die vias may connect the external memory to a die comprising the one or more processing functional units.

Abstract translation: 具有高密度，高延迟内存块的外部存储器; 和一个低密度，低延迟的存储块。 两个存储块可以由一个或多个处理功能单元分开访问。 访问可以是直接内存访问，也可以是总线或光纤交换机。 直通管芯过孔可以将外部存储器连接到包括一个或多个处理功能单元的管芯。