公开(公告)号：WO2018080713A1

公开(公告)日：2018-05-03

申请号：PCT/US2017/053827

申请日：2017-09-27

Applicant: QUALCOMM INCORPORATED

Inventor： CHEN, Jiang ,  GOLDBLATT, Jeremy ,  CABANILLAS, Jose

IPC: H03F1/02 ,  H03F1/32 ,  H03F3/189 ,  H03F3/193

CPC classification number: H03G3/3042 ,  H03F1/0266 ,  H03F1/223 ,  H03F1/32 ,  H03F1/56 ,  H03F3/189 ,  H03F3/193 ,  H03F3/21 ,  H03F3/245 ,  H03F3/45179 ,  H03F3/505 ,  H03F2200/102 ,  H03F2200/211 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/537 ,  H03F2200/69 ,  H03F2203/45394 ,  H03G2201/106

Abstract: A power amplifier bias circuit with embedded envelope detection includes a bias circuit stage coupled to an envelope detector circuit to increases a bias provided to a power amplifier as a function of an incoming envelope signal. The envelope detector circuit includes a first source/emitter follower transistor, a current source, and a filter to generate a baseband envelope signal. The current source is coupled to an output node of the first source/emitter follower transistor and the filter is also coupled to the output node of the first source/emitter follower transistor. The bias circuit stage includes one or more replica transistors that replicate transistors of the power amplifier or power amplifier core stage, an envelope detector replica transistor and a replica of the current source of the envelope detector circuit.

Abstract translation: 具有嵌入包络检测的功率放大器偏置电路包括耦合到包络检测器电路的偏置电路级，以根据输入包络信号增加提供给功率放大器的偏置。 包络检测器电路包括第一源极/射极跟随器晶体管，电流源和用于生成基带包络信号的滤波器。 电流源耦合到第一源极/射极跟随器晶体管的输出节点，并且滤波器也耦合到第一源极/射极跟随器晶体管的输出节点。 偏置电路级包括复制功率放大器或功率放大器核心级的晶体管的一个或多个复制晶体管，包络检测器复制晶体管和包络检测器电路的电流源的复制品。