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    METHOD FOR FABRICATING A MAGNETIC TUNNEL JUNCTION
    1.
    发明申请
    METHOD FOR FABRICATING A MAGNETIC TUNNEL JUNCTION 审中-公开
    制造磁性隧道结的方法

    公开(公告)号：WO2015148059A1

    公开(公告)日：2015-10-01

    申请号：PCT/US2015/018274

    申请日：2015-03-02

    Applicant: QUALCOMM INCORPORATED

    Inventor： LI, Xia ,  LEE, Kangho ,  CHEN, Wei-Chuan ,  LU, Yu ,  PARK, Chando ,  KANG, Seung Hyuk

    IPC: H01L43/12

    CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L43/08 ,  H01L43/12

    Abstract: An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.

    Abstract translation: 提供了一种改进的磁性隧道结装置和用于制造改进的磁性隧道结装置的方法。 所提供的双蚀刻工艺减少蚀刻损伤和烧蚀材料再沉积。 在一个实例中，提供了一种用于制造磁性隧道结（MTJ）的方法。 该方法包括在衬底上形成缓冲层，在衬底上形成底电极，在底电极上形成引脚层，在引脚层上形成阻挡层，并在阻挡层上形成自由层。 第一蚀刻包括蚀刻自由层，而不蚀刻阻挡层，引脚层和底部电极。 该方法还包括在自由层上形成顶部电极，以及在顶部电极上形成硬掩模层。 第二蚀刻包括蚀刻硬掩模层; 顶部电极层，阻挡层，针层和底部电极。

    MAGNETIC TUNNEL JUNCTION BASED RANDOM NUMBER GENERATOR
    3.
    发明申请
    MAGNETIC TUNNEL JUNCTION BASED RANDOM NUMBER GENERATOR 审中-公开
    基于磁性隧道结的随机数发生器

    公开(公告)号：WO2014062705A1

    公开(公告)日：2014-04-24

    申请号：PCT/US2013/065091

    申请日：2013-10-15

    Applicant: QUALCOMM INCORPORATED

    Inventor： LEE, Kangho ,  KIM, Taehyun ,  ZHU, Xiaochun ,  JACOBSON, David M. ,  MADALA, Raghu Sagar ,  WU, Wenqing ,  KIM, Jung Pill ,  KANG, Seung H.

    IPC: G06F7/58

    CPC classification number: G06F7/588

    Abstract: A random number generator system that utilizes a magnetic tunnel junction (MTJ) that is controlled by an STT-MTJ entropy controller that determines whether to proceed with generating random numbers or not by monitoring the health of the MTJ-based random number generator is illustrated. If the health of the random number generation is above a threshold, the STT-MTJ entropy controller shuts down the MTJ-based random number generator and sends a message to a requesting chipset that a secure key generation is not possible. If the health of the random number generation is below a threshold, the entropy controller allows the MTJ-based random number generator to generate random numbers based on a specified algorithm, the output of which is post processed and used by a cryptographic-quality deterministic random bit generator to generate a security key for a requesting chipset.

    Abstract translation: 示出了利用由STT-MTJ熵控制器控制的磁隧道结（MTJ）的随机数发生器系统，其通过监测基于MTJ的随机数发生器的健康来确定是否继续生成随机数。 如果随机数生成的健康状况高于阈值，则STT-MTJ熵控制器关闭基于MTJ的随机数生成器，并且向请求芯片组发送消息，即不可能产生安全密钥。 如果随机数生成的健康状况低于阈值，则熵控制器允许基于MTJ的随机数发生器基于指定的算法产生随机数，其输出被后处理并由加密质量确定性随机使用 以产生请求芯片组的安全密钥。

    SYMMETRICALLY SWITCHABLE SPIN-TRANSFER-TORQUE MAGNETORESISTIVE DEVICE
    4.
    发明申请
    SYMMETRICALLY SWITCHABLE SPIN-TRANSFER-TORQUE MAGNETORESISTIVE DEVICE 审中-公开
    对称可转换转子 - 转矩磁阻器件

    公开(公告)号：WO2013040069A1

    公开(公告)日：2013-03-21

    申请号：PCT/US2012/054911

    申请日：2012-09-12

    Applicant: QUALCOMM Incorporated ,  CHEN, Wei-Chuan ,  LEE, Kangho ,  ZHU, Xiaochun ,  KANG, Seung H.

    Inventor： CHEN, Wei-Chuan ,  LEE, Kangho ,  ZHU, Xiaochun ,  KANG, Seung H.

    IPC: G11C11/16

    CPC classification number: G11C11/161

    Abstract: A spin transfer torque magnetic random access memory (STT-MRAM) device includes magnetic tunnel junctions (MTJs) with reduced switching current asymmetry At least one switching asymmetry balance layer (SABL, 112) near the free layer (108) of the MTJ reduces a first switching current lc(p-ap) causing the value of the first switching current to be nearly equal to the value of a second switching current lc(ap-p) without increasing the average switching current of the device. The SABL (112) may be a non-magnetic switching asymmetry balance layer (NM-SABL, 110) and/or a magnetic switching asymmetry balance layer (M-SABL, 112).

    Abstract translation: 自旋传递转矩磁随机存取存储器（STT-MRAM）装置包括具有降低的开关电流不对称性的磁隧道结（MTJ）。在MTJ的自由层（108）附近的至少一个开关不对称平衡层（SABL，112）减少了 第一开关电流lc（p-ap）使得第一开关电流的值几乎等于第二开关电流lc（ap-p）的值，而不增加器件的平均开关电流。 SABL（112）可以是非磁性开关不对称平衡层（NM-SABL，110）和/或磁性开关不对称平衡层（M-SABL，112）。

    REFERENCE LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC TUNNEL JUNCTION
    5.
    发明申请
    REFERENCE LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC TUNNEL JUNCTION 审中-公开
    普通磁性非线性磁性隧道结的参考层

    公开(公告)号：WO2015138138A1

    公开(公告)日：2015-09-17

    申请号：PCT/US2015/017778

    申请日：2015-02-26

    Applicant: QUALCOMM INCORPORATED

    Inventor： GOTTWALD, Matthias Georg ,  PARK, Chando ,  ZHU, Xiaochun ,  LEE, Kangho ,  KANG, Seung Hyuk

    IPC: G11C11/16

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673

    Abstract: An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.

    Abstract translation: 一种装置包括垂直磁各向异性磁隧道结（pMTJ）装置。 pMTJ设备包括存储层和参考层。 参考层包括被配置为产生亚铁磁效应的部分。 该部分包括第一层，第二层和第三层。 在pMTJ装置的操作期间，第二层配置为反铁磁（AF）耦合第一层和第三层。

    PHYSICALLY UNCLONABLE FUNCTION BASED ON BREAKDOWN VOLTAGE OF METAL-INSULATOR-METAL DEVICE
    6.
    发明申请
    PHYSICALLY UNCLONABLE FUNCTION BASED ON BREAKDOWN VOLTAGE OF METAL-INSULATOR-METAL DEVICE 审中-公开
    基于金属绝缘体金属器件的断开电压的物理不可靠功能

    公开(公告)号：WO2015035037A1

    公开(公告)日：2015-03-12

    申请号：PCT/US2014/054078

    申请日：2014-09-04

    Applicant: QUALCOMM INCORPORATED

    Inventor： ZHU, Xiaochun ,  MILLENDORF, Steven M. ,  GUO, Xu ,  JACOBSON, David M. ,  LEE, Kangho ,  KANG, Seung H. ,  NOWAK, Matthew Michael

    IPC: G11C11/16 ,  H04L9/08 ,  H04L9/32 ,  G11C17/02

    CPC classification number: G06F21/70 ,  G06F1/26 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  G11C17/02 ,  G11C17/14 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

    Abstract: One feature pertains to a method of implementing a physically unclonable function that includes providing an array of metal-insulator-metal (MIM) devices, where the MIM devices are configured to represent a first resistance state or a second resistance state and a plurality of the MIM devices are initially at the first resistance state. The MIM devices have a random breakdown voltage that is greater than a first voltage and less than a second voltage, where the breakdown voltage represents a voltage that causes the MIM devices to transition from the first resistance state to the second resistance state. The method further includes applying a signal line voltage to the MIM devices to cause a portion of the MIM devices to randomly breakdown and transition from the first resistance state to the second resistance state, the signal line voltage greater than the first voltage and less than the second voltage.

    Abstract translation: 一个特征涉及实现物理上不可克隆的功能的方法，其包括提供金属 - 绝缘体 - 金属（MIM）器件的阵列，其中MIM器件被配置为表示第一电阻状态或第二电阻状态，并且多个 MIM器件最初处于第一电阻状态。 MIM器件具有大于第一电压且小于第二电压的随机击穿电压，其中击穿电压表示使MIM器件从第一电阻状态转变到第二电阻状态的电压。 该方法还包括向MIM器件施加信号线电压以使MIM器件的一部分随机击穿并从第一电阻状态转变到第二电阻状态，信号线电压大于第一电压并小于 第二电压。

    MTP MTJ DEVICE
    7.
    发明申请
    MTP MTJ DEVICE 审中-公开
    MTP MTJ设备

    公开(公告)号：WO2014031444A1

    公开(公告)日：2014-02-27

    申请号：PCT/US2013/055175

    申请日：2013-08-15

    Applicant: QUALCOMM INCORPORATED

    Inventor： LI, Xia ,  LEE, Kangho ,  KIM, Jung Pill ,  KIM, Taehyun ,  HSU, Wah Nam ,  KANG, Seung H. ,  ZHU, Xiaochun ,  CHEN, Wei-Chuan ,  KIM, Sungryul

    IPC: G11C17/16 ,  G11C11/16 ,  H01L23/525 ,  H01L27/22

    CPC classification number: H01L43/12 ,  G11C11/005 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/5607 ,  G11C17/02 ,  G11C17/165 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    Abstract: Systems and methods for multiple-time programmable (MTP) devices. An MTP device includes a magnetic tunnel junction (MTJ) device programmable to a plurality of states based on voltage applied across the MTJ device. The plurality of states include a first resistance state corresponding to a first binary value stored in the MTJ device based on a first voltage, a second resistance state corresponding to a second binary value stored in the MTJ device based on a second voltage, a third resistance state corresponding to a breakdown of a barrier layer of the MTJ device based on a third voltage, and a fourth resistance state corresponding to an open fuse based on a fourth voltage.

    Abstract translation: 多时间可编程（MTP）设备的系统和方法。 MTP设备包括基于跨越MTJ设备施加的电压而可编程为多个状态的磁隧道结（MTJ）设备。 多个状态包括基于第一电压存储在MTJ装置中的第一二进制值的第一电阻状态，基于第二电压存储在MTJ装置中的与第二二进制值对应的第二电阻状态，第三电阻 状态对应于基于第三电压的MTJ装置的势垒层的击穿，以及对应于基于第四电压的开路保险丝的第四电阻状态。

    SYSTEM AND METHOD TO CONTROL A DIRECTION OF A CURRENT APPLIED TO A MAGNETIC TUNNEL JUNCTION
    9.
    发明申请
    SYSTEM AND METHOD TO CONTROL A DIRECTION OF A CURRENT APPLIED TO A MAGNETIC TUNNEL JUNCTION 审中-公开
    用于控制应用于磁性隧道结的电流的方向的系统和方法

    公开(公告)号：WO2011088378A1

    公开(公告)日：2011-07-21

    申请号：PCT/US2011/021380

    申请日：2011-01-14

    Applicant: QUALCOMM Incorporated ,  KIM, Jung, Pill ,  RAO, Hari, M. ,  LEE, Kangho

    Inventor： KIM, Jung, Pill ,  RAO, Hari, M. ,  LEE, Kangho

    IPC: G11C11/16 ,  H01L43/08

    CPC classification number: G11C11/1673 ,  H01L43/08

    Abstract: A system and method to control a direction of a current applied to a magnetic tunnel junction (139) is disclosed. In a particular embodiment, an apparatus comprises a magnetic tunnel junction (MTJ) storage element and a sense amplifier (102). The sense amplifier is coupled to a first path (114) and to a second path (116). The first path includes a first current direction selecting transistor (118) and the second path includes a second current direction selecting transistor (120). The first path is coupled to a bit line (140) of the MTJ storage element and the second path is coupled to a source line (142) of the MTJ storage element.

    Abstract translation: 公开了一种控制施加到磁性隧道结（139）的电流的方向的系统和方法。 在特定实施例中，一种装置包括磁性隧道结（MTJ）存储元件和读出放大器（102）。 读出放大器耦合到第一路径（114）和第二路径（116）。 第一路径包括第一电流方向选择晶体管（118），并且第二路径包括第二电流方向选择晶体管（120）。 第一路径耦合到MTJ存储元件的位线（140），并且第二路径耦合到MTJ存储元件的源极线（142）。

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