公开(公告)号：JP2012161913A

公开(公告)日：2012-08-30

申请号：JP2012031420

申请日：2012-02-16

Applicant: Qualcomm Mems Technologies Inc ,  クォルコム・メムズ・テクノロジーズ・インコーポレーテッド

Inventor： QUI CHENGBIN ,  SASAGAWA TERUO ,  TUNG MING-HAU ,  WANG CHUN-MING ,  ZEE STEPHEN

IPC: B81C1/00 ,  B81B3/00 ,  G02B26/06

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming layers within a MEMS device to achieve a tapered edge.SOLUTION: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask and the mask layer is removed, thereby leaving a structure having tapered edges.

Abstract translation: 要解决的问题：提供一种在MEMS器件内形成层以实现锥形边缘的方法。 解决方案：某些MEMS器件包括图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角的孔的剥离掩模，使得可以在剥离掩模上沉积层并且去除掩模层，从而留下具有渐缩边缘的结构。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：WO2008085252A3

公开(公告)日：2008-10-02

申请号：PCT/US2007025421

申请日：2007-12-10

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  CHUNG WONSUK ,  GANTI SURYAPRAKASH ,  ZEE STEPHEN

Inventor： CHUNG WONSUK ,  GANTI SURYAPRAKASH ,  ZEE STEPHEN

IPC: G02B26/00 ,  B81B7/00

CPC classification number: G02B26/001

Abstract: A microelectromechanical systems device having an electrical interconnect (202) connected to at least one of an electrode (16a) and a movable layer (14) within the device. At least a portion of the electrical interconnect (202) is formed from the same material as a movable layer (14) of the device. A thin film (64), particularly formed of molybdenum, is provided underneath the electrical interconnect (202). The movable layer (14) preferably comprises aluminum.

Abstract translation: 一种具有连接到所述装置内的电极（16a）和可移动层（14）中的至少一个的电互连（202）的微机电系统装置。 电互连（202）的至少一部分由与器件的可移动层（14）相同的材料形成。 特别由钼形成的薄膜（64）设置在电互连（202）下方。 可移动层（14）优选地包括铝。

公开(公告)号：WO2011034972A3

公开(公告)日：2011-05-12

申请号：PCT/US2010048997

申请日：2010-09-15

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  KOTHARI MANISH ,  GUDLAVALLETI SAURI ,  ZEE STEPHEN

Inventor： KOTHARI MANISH ,  GUDLAVALLETI SAURI ,  ZEE STEPHEN

IPC: G02B26/00 ,  B81B3/00 ,  G02B26/08

CPC classification number: B81B3/0008 ,  B81B2201/042 ,  B81C2201/112 ,  B81C2201/115 ,  G02B26/001 ,  G02B26/0841

Abstract: In certain embodiments, a device is provided including a substrate (102) and a plurality of supports (104) over the substrate. The device further includes a mechanical layer (106) having a movable portion and a stationary portion. The stationary portion being disposed over the supports. The device further includes a reflective surface (108) positioned over the substrate and mechanically coupled to the movable portion (112). The device of certain embodiments further includes at least one movable stop element (110) displaced from and mechanically coupled to the movable portion. In certain embodiments, the at least a portion of the stop element may be positioned over the stationary portion.

Abstract translation: 在某些实施例中，提供了一种装置，其包括衬底（102）和在衬底上的多个支撑件（104）。 该装置还包括具有可移动部分和固定部分的机械层（106）。 固定部分设置在支撑件上。 该装置还包括位于衬底上并机械地联接到可动部分（112）的反射表面（108）。 某些实施例的装置还包括从可移动部分移位并机械联接到可移动部分的至少一个可移动止动元件（110）。 在某些实施例中，止动元件的至少一部分可以定位在固定部分上方。

公开(公告)号：WO2007041302A2

公开(公告)日：2007-04-12

申请号：PCT/US2006038084

申请日：2006-09-29

Applicant: QUALCOMM MEMS TECHNOLOGIES INC

Inventor： LEWIS ALAN G ,  KOTHARI MANISH ,  BATEY JOHN ,  SASAGAWA TERUO ,  TUNG MING-HAU ,  U REN GREGORY D ,  ZEE STEPHEN

IPC: B81B7/00

CPC classification number: B81B7/0006 ,  B81B7/007 ,  B81B2201/047 ,  G02B26/001 ,  H02N1/006

Abstract: A microelectromechanical systems device having an electrical interconnect between circuitry outside the device and at least one of an electrode (16) and a movable layer (14) within the device. At least a portion of the electrical interconnect is formed from the same material as a conductive layer between the electrode (14) and a mechanical layer (92) of the device. In an embodiment, this conductive layer is a sacrificial layer (60) that is subsequently removed to form a cavity (19) between the electrode (16) and the movable layer (14). The sacrificial layer (60) is preferably formed of molybdenum, doped silicon, tungsten, or titanium. According to another embodiment, the conductive layer is a movable reflective layer (14) that preferably comprises aluminum.

Abstract translation: 一种微机电系统装置，其具有在所述装置外部的电路和所述装置内的电极（16）和可移动层（14）中的至少一个之间的电互连。 电互连的至少一部分由与电极（14）和器件的机械层（92）之间的导电层相同的材料形成。 在一个实施例中，该导电层是随后被去除以在电极（16）和可移动层（14）之间形成空腔（19）的牺牲层（60）。 牺牲层（60）优选由钼，掺杂硅，钨或钛形成。 根据另一实施例，导电层是优选包括铝的可移动反射层（14）。