公开(公告)号：KR840001695B1

公开(公告)日：1984-10-15

申请号：KR800004943

申请日：1980-12-26

Applicant: RCA CORP

Inventor： VIELAND LEON J ,  CANNULI VINCENT M

IPC: H01J19/42 ,  H01J29/50

公开(公告)号：CA1159876A

公开(公告)日：1984-01-03

申请号：CA368422

申请日：1981-01-13

Applicant: RCA CORP

Inventor： VIELAND LEON J ,  CANNULI VINCENT M

IPC: H01J29/50 ,  H01J29/62 ,  H01J29/48

Abstract: RCA 74,243 The electron gun comprises an electron lens structure including a pair of terminal electrodes fixedly mounted along a pair of glass support rods. Disposed between the terminal electrodes is a resistive lens stack of alternate apertured electrode plates and resistive spacer blocks. The electrode plates and resistive spacer blocks are urged into good electrical contact with each other and with the terminal electrodes by a plurality of leaf springs. The electrode plates are preferably lightly contacted by the glass support rods to prevent lateral movement of the plates without preventing their spring-urged contact with the resistive blocks.

公开(公告)号：CA966040A

公开(公告)日：1975-04-15

申请号：CA134484

申请日：1972-02-10

Applicant: RCA CORP

Inventor： CANNULI VINCENT M

IPC: H01L21/208

Abstract: 1373673 Semiconductors by liquid epitaxy R C A CORPORATION 13 March 1972 [21 June 1971] 11569/72 Heading B1S A smooth surfaced epitaxial layer of a semiconductor material is produced on a substrate by bringing a surface of the substrate into contact with a solution of the semiconductor in a molten metallic solvent and cooling to deposit an epitaxial layer on the surface, and while the layer is still covered with a film of said first solution bringing it into contact with a second solution of the same molten metallic solvent saturated with the same semiconductor and also containing an additional metal which increases the surface cohesion of the second solution and finally removing the coated substrate from the second solutionwithout retaining any of the second solution on the epitaxial layer. The process may be used to deposit a layer of gallium arsenide containing if desired, a dopant upon a gallium arsenide substrate, in which case the solvent metal may be gallium. The metal used to increase the surface adhesion of the second solution may be aluminium or tin. In a particular embodiment a furnace boat 12 of inert refractory material such as graphite is formed with wells 14, 16-18 and provided with a slide 22 of the same material moving in a passage 20 in the boat 12. The slide has a recess 24 into which a substrate of gallium arsenide 26 is placed. A solution of gallium arsenide in gallium and containing dopants (tin, tellurium, silicon or zinc, germanium, magnesium) is placed in well 14 and a solution of gallium arsenide and either tin or aluminium in gallium is placed in well 16. The boat is heated in a flow of hydrogen to ensure complete solution and cooled while the slide is moved so that the substrate is in contact with the solution in well 14, thus depositing an epitaxial layer of gallium arsenide on the substrate. On moving the slide further in the direction of the arrow a thin film of the first solution is carried along on the deposited layer. When this comes into contact with the solution in well 16, the film of first solution dissolves in the solution in well 16. This takes place rapidly (in a few seconds) and on moving the slide out of contact with well 16 the high surface cohesion of the second solution ensures its total retention in the well and effectively the liquid layer from 14 is scraped off the surface of the epitaxial deposit, so that on reaching well 18 a smooth surfaced layer is found on the substrate.

公开(公告)号：PL229300A1

公开(公告)日：1981-09-04

申请号：PL22930081

申请日：1981-01-21

Applicant: RCA CORP

Inventor： VIELAND LEON J ,  CANNULI VINCENT M

IPC: H01J29/50 ,  H01J29/62