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    ELECTRON GUN HAVING SPRING-LOADED RESISTIVE LENS STRUCTURE
    2.
    发明专利
    ELECTRON GUN HAVING SPRING-LOADED RESISTIVE LENS STRUCTURE 未知

    公开(公告)号：CA1159876A

    公开(公告)日：1984-01-03

    申请号：CA368422

    申请日：1981-01-13

    Applicant: RCA CORP

    Inventor： VIELAND LEON J ,  CANNULI VINCENT M

    IPC: H01J29/50 ,  H01J29/62 ,  H01J29/48

    Abstract: RCA 74,243 The electron gun comprises an electron lens structure including a pair of terminal electrodes fixedly mounted along a pair of glass support rods. Disposed between the terminal electrodes is a resistive lens stack of alternate apertured electrode plates and resistive spacer blocks. The electrode plates and resistive spacer blocks are urged into good electrical contact with each other and with the terminal electrodes by a plurality of leaf springs. The electrode plates are preferably lightly contacted by the glass support rods to prevent lateral movement of the plates without preventing their spring-urged contact with the resistive blocks.

    SIMPLIFIED RESISTIVE LENS ELECTRON GUN WITH COMPOUND LINEAR VOLTAGE PROFILE
    4.
    发明专利
    SIMPLIFIED RESISTIVE LENS ELECTRON GUN WITH COMPOUND LINEAR VOLTAGE PROFILE 未知

    公开(公告)号：CA1143774A

    公开(公告)日：1983-03-29

    申请号：CA357581

    申请日：1980-08-05

    Applicant: RCA CORP

    Inventor： BORTFELD DAVID P ,  VIELAND LEON J

    IPC: H01J29/48 ,  H01J29/50 ,  H01J29/62

    Abstract: RCA 74,243A The electron gun includes a pair of electrodes between which a resistive lens structure comprising a stack of alternate apertured plates and resistive blocks is disposed. The stack comprises a first section which has two resistive blocks between each adjacent pair of electrode plates and a second section which has one resistive block between each adjacent pair of electrode plates. The lens is thereby adapted to operate with a potential profile which comprises a compound linear slope in a 1:2 ratio.

    RESISTIVE LENS ELECTRON GUN WITH COMPOUND LINEAR VOLTAGE PROFILE
    6.
    发明专利
    RESISTIVE LENS ELECTRON GUN WITH COMPOUND LINEAR VOLTAGE PROFILE 未知

    公开(公告)号：CA1143775A

    公开(公告)日：1983-03-29

    申请号：CA357582

    申请日：1980-08-05

    Applicant: RCA CORP

    Inventor： WINARSKY NORMAN D ,  COHEN ROGER W ,  BORTFELD DAVID P ,  VIELAND LEON J

    IPC: H01J29/48 ,  H01J29/50 ,  H01J29/62

    Abstract: RCA 72,299 The electron gun includes a pair of electrodes between which a resistive lens structure comprising a stack of alternate apertured plates and resistive blocks is disposed. A first portion of the resistive stack is electrically paralleled with another stack of resistive blocks whereby bleeder current through the resistive lens structure results in a compound linear potential profile. The other stack of resistive blocks may comprise a second stack in the same lens structure interleaved with the apertured plates of the lens structure, or it may (as claimed herein) constitute together with a different set of apertured plates a second resistive lens structure between a different pair of electrodes of the gun.

    SUPERCONDUCTING NIOBIUM-GALLIUM ALLOY
    9.
    发明专利
    SUPERCONDUCTING NIOBIUM-GALLIUM ALLOY 未知

    公开(公告)号：CA995310A

    公开(公告)日：1976-08-17

    申请号：CA173127

    申请日：1973-06-04

    Applicant: RCA CORP

    Inventor： VIELAND LEON J ,  WICKLUND ARNOLD W

    IPC: C23C16/08 ,  C22C27/02 ,  C22F1/00 ,  C23C16/02 ,  C23C16/06 ,  H01B12/06 ,  H01B13/00 ,  H01L39/06 ,  H01L39/12 ,  H01L39/24

    Abstract: 1409340 Depositing Nb-Ga alloys RCA CORPORATION 25 June 1973 [3 July 1972] 29991/73 Heading C7F [Also in Division H1] A super-conducting article comprises a substrate having a first layer of a Nb-rich Nb-Ga alloy of beta-tungsten structure having a critical temperature of 13-15‹K and a second layer of Nb-Ga alloy of beta-tungsten structure having a critical temperature above 19‹K, the second layer comprising substantially one molecule of Ga to three molecules of Nb. The layers may be deposited by chemical vapour deposition, the first at T>700‹C and the second at 640-700‹C; the substrate may be metal, ceramic, glass or quartz. As shown, He (or Ar) as carrier gas enters tubes 18 and 19, whilst H 2 as reducing gas enters at 14. Halogen-containing gas, e.g. HCl or Cl 2 , is passed over Nb granules 20 and over Ga in boat 21 in relative amounts to produce the required deposition atmosphere, excess gas being fed in at 22 to prevent premature reaction and deposition. With the reactor temperature above 700 C, a first layer, e.g. 3-5Á thick, of Nb-Ga alloy is deposited, then the temperature is lowered to 640-700‹C, and the supply of halogen to the Nb is lowered, and the required second layer is deposited.

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