公开(公告)号：US3702786A

公开(公告)日：1972-11-14

申请号：US3702786D

申请日：1970-10-28

Applicant: RCA CORP

Inventor： DUFFY MICHAEL THOMAS

IPC: H01L21/316 ,  H01L29/00 ,  B44D1/18 ,  C23C11/00

CPC classification number: H01L21/3162 ,  H01L21/02178 ,  H01L21/02271 ,  H01L21/02337 ,  H01L29/00

Abstract: A METHOD OF MAKING AN MOS TRANSISTOR HAVING A FILM OF AL2O3 AS ITS GATE ELECTRODE INSULATOR, COMPRISING DEPOSITING THE OXIDE BY A VAPOR DEPOSITION PROCESS, THEN HEATING THE DEPOSITED FILM AT A TEMPERATURE OF ABOVE ABOUT 700*C. IN A WET GAS ATMOSPHERE.

公开(公告)号：GB2195498A

公开(公告)日：1988-04-07

申请号：GB8722420

申请日：1987-09-23

Applicant: RCA CORP

Inventor： DUFFY MICHAEL THOMAS ,  CULLEN GLENN WHERRY

IPC: H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/86 ,  H01L29/32 ,  H01L29/786 ,  H01L29/30

Abstract: A radiation hardened silicon-on-insulator semiconductor device and method of making the same is disclosed. A region is formed in the silicon layer adjacent the insulating substrate which has a high density of naturally occurring crystallographic defects. This region substantially reduces the back-channel leakage that occurs when the device is operated after being irradiated.

公开(公告)号：FR2479633A1

公开(公告)日：1981-10-02

申请号：FR8105812

申请日：1981-03-24

Applicant: RCA CORP

Inventor： MUELLER CHARLES WILLIAM ,  DOUGLAS EDWARD CURTIS ,  DUFFY MICHAEL THOMAS

IPC: G11B9/07 ,  H04R19/06 ,  H04N5/76

公开(公告)号：IT1194036B

公开(公告)日：1988-08-31

申请号：IT2029081

申请日：1981-03-11

Applicant: RCA CORP

Inventor： MUELLER CHARLES WILLIAM ,  DOUGLAS EDWARD CURTIS ,  DUFFY MICHAEL THOMAS

IPC: G11B9/07 ,  G11B

公开(公告)号：DE3731742A1

公开(公告)日：1988-03-31

申请号：DE3731742

申请日：1987-09-22

Applicant: RCA CORP

Inventor： DUFFY MICHAEL THOMAS ,  CULLEN GLENN WHERRY

IPC: H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/86 ,  H01L29/32 ,  H01L29/786 ,  H01L27/12

Abstract: A radiation hardened silicon-on-insulator semiconductor device and method of making the same is disclosed. A region is formed in the silicon layer adjacent the insulating substrate which has a high density of naturally occurring crystallographic defects. This region substantially reduces the back-channel leakage that occurs when the device is operated after being irradiated.

公开(公告)号：GB2195498B

公开(公告)日：1990-01-10

申请号：GB8722420

申请日：1987-09-23

Applicant: RCA CORP

Inventor： DUFFY MICHAEL THOMAS ,  CULLEN GLENN WHERRY

IPC: H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/86 ,  H01L29/32 ,  H01L29/786

Abstract: A radiation hardened silicon-on-insulator semiconductor device and method of making the same is disclosed. A region is formed in the silicon layer adjacent the insulating substrate which has a high density of naturally occurring crystallographic defects. This region substantially reduces the back-channel leakage that occurs when the device is operated after being irradiated.

公开(公告)号：FR2479633B1

公开(公告)日：1986-11-07

申请号：FR8105812

申请日：1981-03-24

Applicant: RCA CORP

Inventor： MUELLER CHARLES WILLIAM ,  DOUGLAS EDWARD CURTIS ,  DUFFY MICHAEL THOMAS

IPC: G11B9/07 ,  H04R19/06 ,  H04N5/76

公开(公告)号：DE3110963A1

公开(公告)日：1982-01-07

申请号：DE3110963

申请日：1981-03-20

Applicant: RCA CORP

Inventor： MUELLER CHARLES WILLIAM ,  DOUGLAS EDWARD CURTIS ,  DUFFY MICHAEL THOMAS

IPC: G11B9/07 ,  G11B3/48