公开(公告)号：US3885061A

公开(公告)日：1975-05-20

申请号：US38919273

申请日：1973-08-17

Applicant: RCA CORP

Inventor： CORBOY JOHN FRANCIS ,  CULLEN GLENN WHERRY ,  PASTAL NICHOLAS

IPC: C30B25/02 ,  C23C16/44 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  H01L21/86 ,  H01L27/12 ,  C23C11/00

CPC classification number: H01L21/0242 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/007 ,  Y10S148/025 ,  Y10S148/129 ,  Y10S148/15

Abstract: Method of forming an epitaxial crystalline layer on a crystalline substrate by depositing a first portion at a rapid growth rate and a second portion at a slower growth rate.

Abstract translation: 通过以快速生长速率沉积第一部分和以较慢生长速率沉积第二部分在晶体衬底上形成外延晶体层的方法。

公开(公告)号：US3883313A

公开(公告)日：1975-05-13

申请号：US31497472

申请日：1972-12-14

Applicant: RCA CORP

Inventor： CULLEN GLENN WHERRY ,  BOLIN STEPHEN RAY ,  CORBOY JOHN FRANCIS ,  CREAMER JOHN ELVIN ,  WASIELEWSKI ALAN JOHN

IPC: C30B15/00 ,  B01J17/24 ,  C01F7/02 ,  H01H3/10

CPC classification number: C30B15/00 ,  C30B29/26 ,  Y10S117/902 ,  Y10S117/906

Abstract: A modified, Czochralski-grown, single-crystalline spinel has a nominal composition (MgO)(Al2O3)x, where x can be between 1 and 2.3. The spinel has an (OH) ion content in its lattice that is related to the infra-red absorption coefficient Alpha , where Alpha varies with the MgO/Al2O3 ratio and at wave number 3360 cm 1 can be between 0.3 and 3.0 cm 1. The novel spinel is grown by a modified Czochralski method wherein the spinel is pulled from a melt of MgO and Al2O3 in an ambient, comprising between 0.2% and 2.0% oxygen, an inert gas, and water vapor substantially saturating (90 - 100% relative humidity) the abmient.

Abstract translation: 改性的切克劳斯基生长的单晶尖晶石具有标称组成（MgO）（Al 2 O 3）x，其中x可以在1和2.3之间。 尖晶石在其晶格中具有与红外吸收系数α有关的（OH）离子含量，其中α随MgO / Al 2 O 3比变化，波数3360cm -1可以在0.3和3.0cm之间 < - > 1。 新型尖晶石通过改性Czochralski法生长，其中尖晶石在环境中从MgO和Al 2 O 3的熔体中拉出，包含0.2％至2.0％的氧气，惰性气体和基本饱和的水蒸气（90-100％相对 湿度）。

公开(公告)号：DE3731742A1

公开(公告)日：1988-03-31

申请号：DE3731742

申请日：1987-09-22

Applicant: RCA CORP

Inventor： DUFFY MICHAEL THOMAS ,  CULLEN GLENN WHERRY

IPC: H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/86 ,  H01L29/32 ,  H01L29/786 ,  H01L27/12

Abstract: A radiation hardened silicon-on-insulator semiconductor device and method of making the same is disclosed. A region is formed in the silicon layer adjacent the insulating substrate which has a high density of naturally occurring crystallographic defects. This region substantially reduces the back-channel leakage that occurs when the device is operated after being irradiated.

公开(公告)号：GB2195498B

公开(公告)日：1990-01-10

申请号：GB8722420

申请日：1987-09-23

Applicant: RCA CORP

Inventor： DUFFY MICHAEL THOMAS ,  CULLEN GLENN WHERRY

IPC: H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/86 ,  H01L29/32 ,  H01L29/786

Abstract: A radiation hardened silicon-on-insulator semiconductor device and method of making the same is disclosed. A region is formed in the silicon layer adjacent the insulating substrate which has a high density of naturally occurring crystallographic defects. This region substantially reduces the back-channel leakage that occurs when the device is operated after being irradiated.

公开(公告)号：YU315071A

公开(公告)日：1978-10-31

申请号：YU315071

申请日：1971-12-16

Applicant: RCA CORP

Inventor： WHERRY CULLEN GLENN ,  CULLEN GLENN WHERRY ,  RAY BOLIN STEPHEN ,  BOLIN STEPHEN RAY ,  DAVID MORRISON ANDREW ,  MORRISON ANDREW DAVID ,  CHUN WANG CHIH ,  WANG CHIH CHUN

IPC: C30B15/00 ,  C01F5/00 ,  C01F7/00

公开(公告)号：DE2422508A1

公开(公告)日：1975-03-13

申请号：DE2422508

申请日：1974-05-09

Applicant: RCA CORP

Inventor： CORBOY JOHN FRANCIS ,  CULLEN GLENN WHERRY ,  PASTAL NICHOLAS

IPC: C30B25/02 ,  C23C16/44 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  H01L21/86 ,  H01L27/12 ,  B01J17/32

公开(公告)号：YU34261B

公开(公告)日：1979-04-30

申请号：YU315071

申请日：1971-12-16

Applicant: RCA CORP

Inventor： WHERRY CULLEN GLENN ,  CULLEN GLENN WHERRY ,  RAY BOLIN STEPHEN ,  BOLIN STEPHEN RAY ,  DAVID MORRISON ANDREW ,  MORRISON ANDREW DAVID ,  CHUN WANG CHIN ,  WANG CHIN CHUN

IPC: C30B15/00 ,  C01F5/00 ,  C01F7/00

公开(公告)号：DE1243943B

公开(公告)日：1967-07-06

申请号：DER0032745

申请日：1962-05-18

Applicant: RCA CORP

Inventor： AMICK JAMES ALBERT ,  CULLEN GLENN WHERRY

IPC: C23C8/80 ,  C23C22/02 ,  H01L23/29

公开(公告)号：GB2195498A

公开(公告)日：1988-04-07

申请号：GB8722420

申请日：1987-09-23

Applicant: RCA CORP

Inventor： DUFFY MICHAEL THOMAS ,  CULLEN GLENN WHERRY

IPC: H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/86 ,  H01L29/32 ,  H01L29/786 ,  H01L29/30

Abstract: A radiation hardened silicon-on-insulator semiconductor device and method of making the same is disclosed. A region is formed in the silicon layer adjacent the insulating substrate which has a high density of naturally occurring crystallographic defects. This region substantially reduces the back-channel leakage that occurs when the device is operated after being irradiated.

公开(公告)号：AU6895474A

公开(公告)日：1975-11-20

申请号：AU6895474

申请日：1974-05-15

Applicant: RCA CORP

Inventor： PASTAL NICHOLAS ,  CORBOY JOHN FRANCIS ,  CULLEN GLENN WHERRY

IPC: C30B25/02 ,  C23C16/44 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  H01L21/86 ,  H01L27/12 ,  H01L7/02 ,  B01J17/00 ,  H01L7/36 ,  H01L19/00