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    1.
    发明专利
    未知

    公开(公告)号：DE1942897A1

    公开(公告)日：1970-02-26

    申请号：DE1942897

    申请日：1969-08-22

    Applicant: RCA CORP

    Inventor： EMANUEL SIMON RALPH ,  LEE RODGERS ROBERT

    IPC: H01J29/45 ,  H01L29/00

    Abstract: 1279276 Image pick-up tubes; photoconductive targets RCA CORPORATION 22 Aug 1969 [23 Aug 1968] 42003/69 Headings H1D and H1K A photoconductive target for a vidicon type camera tube comprises a wafer of N conductivity type GaAs 1-x P x (e.g. x = 0À45) semiconductor material 22, continuous P type conductivity region 24, the wafer being a single crystal or plurality of crystals each being continuous throughout the layer and thin semiinsulating material 26 of resistivity 10 8 to 10 9 ohm cm. which acts to thermalize electrons impinging on the face and to prevent those electrons from travelling through the target as dark current. Conducting layer 20 may be N + type and region 24 has a density of surface states such that it acts like a P type layer. Semiconductor band gap of 1À8 eV in the range 1 to 3 eV is instanced, and fabrication by vapour phase growth from a 5 mm. thick GaAs wafer to produce wafer 19 of thickness to reduce capaoitative lag which may be 3 to 10 microns (e.g. 5 microns) thick, and preferably discoidal in shape. Sapphire substrates could also be used for fabrication. N region 22 may be Si doped to 10 15 donors/cm. 3 , preferably 1014 to 10 15 donors/ cm. 3 , N + region 20 may be one micron thick and acts as signal plate. Wafer 19 may be attached to the faceplate 14 by epoxy cement, the GaAs substrate used during fabrication then being removed. Resistive layer 26 may be evaporated antimony trisulphide, glass, or other materials with the appropriate natural resistivity or a resistivity adjusted by doping.

    2.
    发明专利
    未知

    公开(公告)号：DE1942328A1

    公开(公告)日：1970-09-03

    申请号：DE1942328

    申请日：1969-08-20

    Applicant: RCA CORP

    Inventor： EMANUEL SIMON RALPH ,  JOSEPH TIETJEN JAMES

    IPC: H01J29/45 ,  H01L29/00 ,  H01L31/00

    Abstract: 1284886 Image pick up tube; PN junction elements RCA CORPORATION 22 Aug 1969 [23 Aug 1968] 42002/69 Headings HID and H1K A camera tube e.g. Vidicon comprises a lightsensitive photo-conductive target including a single crystal of GaAsP semi-conductor or plurality of such single crystals, the or each crystal including N and P-type layers 20 and 22 respectively to form a laterally continuous PN junction which acts as a barrier junction when back biased to impede electron flow from the P- to N-type layer, the crystals being positioned so that the P-type layer or layers may be scanned by the electron beam. The crystal may be of band gap 1-8 to 2À6 eV while layer 20 may be Si doped to less than 10 15 donors/cm. 3 and be 3 to 10 Á thick, and epitaxial layer 22 may be 1 Á thick and Fe or Cr doped to 10 10 ohm cm. resistivity to impede lateral current flow. In preparation, arsine and phosphine gases with hydrogen, gallium sub-chloride vapour and hydrogen selenide are metered to the deposition zone, the P-type doping being by reacting hydrogen chloride gas with iron in helium, the ferrous chloride being hydrogen reduced. Prior to removal of a GaAs substrate employed for growth, layer 20 is adhered by epoxy to faceplate 14. Target 16 absorption edge may be about 6500 A for GaAs 1-x P x where x=0À45 and is controllable by GaAs : GaP ratio variations (e.g. 5600 to 9000 )Š. N- or N+-type GaP or GaAsP, N+-type, may be added as signal plate between the above N-type layer and the faceplate (e.g. Fig. 3, not shown). P-type layer (28) (Fig. 4, not shown) of a few Áthick GaP has lower electrical conductivity than layer 22 providing a barrier to high velocity electrons without surface conduction increases. Light and electrons may impinge on the same side (Fig. 5, not shown) and intrinsic GaAs layer (30) may also be the substrate used during crystal growths.

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