公开(公告)号：EP0273047A4

公开(公告)日：1988-07-04

申请号：EP87904156

申请日：1987-05-27

Applicant: RCA CORP

Inventor： DOLNY GARY MARK ,  GOODMAN LAWRENCE ALAN

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/74 ,  H01L29/08 ,  H01L29/423

CPC classification number: H01L29/7813 ,  H01L29/4236 ,  H01L29/66666

Abstract: A vertical MOSFET in a silicon wafer having opposing major surfaces includes a source electrode on one surface, a drain electrode on the second surface, and an internally disposed insulated gate. The silicon between the insulated gate and each of the major surfaces is of first conductivity type and the silicon that is laterally adjacent to the insulated gate is of second conductivity type, such that a predetermined voltage on the insulated gate creates an inversion channel extending a predetermined distance into the laterally adjacent silicon. That portion of the laterally adjacent silicon where the inversion channel is formed is of relatively lightly doped material, whereas other areas of the laterally adjacent silicon is relatively heavily doped. The silicon that is between the insulated gate and each wafer surface includes a relatively lightly doped voltage-supporting region contiguous with the insulated gate and the laterally adjacent silicon and a relatively heavily doped region between this voltage-supporting region and the surface. Additionally, the interface between the insulated gate and the laterally adjacent silicon has a low density of interface states.

公开(公告)号：US3896016A

公开(公告)日：1975-07-22

申请号：US48624474

申请日：1974-07-05

Applicant: RCA CORP

Inventor： GOODMAN LAWRENCE ALAN ,  CARLSON DAVID EMIL

IPC: G02F1/1337 ,  G02F1/1333 ,  G09F9/35 ,  B01D13/02

CPC classification number: G02F1/1333

Abstract: Glass workpieces having a conductive material film on one surface, for eventual use as substrates between which a liquid crystal material is contained, are treated to remove or deplete various impurities from a thin region within the substrates at the one surface.

Abstract translation: 处理在一个表面上具有导电材料膜的玻璃工件，用于最终用作其上含有液晶材料的基板，以在一个表面上从基板内的薄区域去除或消除各种杂质。

公开(公告)号：DE3533808A1

公开(公告)日：1986-04-03

申请号：DE3533808

申请日：1985-09-21

Applicant: RCA CORP

Inventor： GOODMAN LAWRENCE ALAN ,  RUSSEL JOHN PATRICK

IPC: H01L21/28 ,  H01L21/331 ,  H01L29/417 ,  H01L29/739 ,  H01L29/78

公开(公告)号：GB2154794A

公开(公告)日：1985-09-11

申请号：GB8504367

申请日：1985-02-20

Applicant: RCA CORP

Inventor： GOODMAN LAWRENCE ALAN ,  GOODMAN ALVIN MALCOLM

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/41 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: A vertical MOSFET device includes a semiconductor wafer having source, body and drain regions of alternate conductivity type disposed therein. The source and drain regions are located so as to define the length and width of a channel region in the body region at a surface of the wafer. The body region further includes a similar conductivity type supplementary region having a relatively high areal dopant concentration. The supplementary region, which can be fabricated by ion implantation, extends laterally beneath a portion of the channel region. A source electrode is disposed on one wafer surface and a drain electrode is disposed on an opposing wafer surface.

公开(公告)号：GB2165091A

公开(公告)日：1986-04-03

申请号：GB8523651

申请日：1985-09-25

Applicant: RCA CORP

Inventor： GOODMAN LAWRENCE ALAN ,  RUSSELL JOHN PATRICK

IPC: H01L21/28 ,  H01L21/331 ,  H01L29/417 ,  H01L29/739 ,  H01L29/78 ,  H01L29/08 ,  H01L29/52

Abstract: An IGFET (10) with reduced parasitic bipolar effects comprises a semiconductor wafer (12) having a drain region (20, 22) of first conductivity type contiguous with a wafer surface (14). A body region (24) of second conductivity type is diffused into the wafer (12) from a portion of the wafer surface (14) so as to form a body/drain PN junction (26). A source region (28) of first conductivity type is diffused from the water surface (14) within the boundary of the body region (24) so as to form a source/body PN junction (30) which extends to a predetermined depth from the wafer surface (14). The source/body PN junction (30) is spaced from the body/drain PN junction (26) so as to define a channel region (32) in the body region (24) at the wafer surface (14). An aluminium layer (42) is formed in the wafer surface (14) such that the aluminium electrically contacts via aluminium "spikes" (43) the source/body PN junction (30) from being biased during device (10) operation.

公开(公告)号：FR2570880A1

公开(公告)日：1986-03-28

申请号：FR8513907

申请日：1985-09-19

Applicant: RCA CORP

Inventor： GOODMAN LAWRENCE ALAN ,  RUSSEL JOHN PATRICK

IPC: H01L21/28 ,  H01L21/331 ,  H01L29/417 ,  H01L29/739 ,  H01L29/78

公开(公告)号：FR2559958B1

公开(公告)日：1988-08-05

申请号：FR8502448

申请日：1985-02-20

Applicant: RCA CORP

Inventor： GOODMAN LAWRENCE ALAN ,  GOODMAN ALVIN MALCOM

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/41 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: A vertical MOSFET device includes a semiconductor wafer having source, body and drain regions of alternate conductivity type disposed therein. The source and drain regions are located so as to define the length and width of a channel region in the body region at a surface of the wafer. The body region further includes a similar conductivity type supplementary region having a relatively high areal dopant concentration. The supplementary region, which can be fabricated by ion implantation, extends laterally beneath a portion of the channel region. A source electrode is disposed on one wafer surface and a drain electrode is disposed on an opposing wafer surface.

公开(公告)号：DE3505393A1

公开(公告)日：1985-08-29

申请号：DE3505393

申请日：1985-02-16

Applicant: RCA CORP

Inventor： GOODMAN LAWRENCE ALAN ,  GOODMAN ALVIN MALCOLM

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/41 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: A vertical MOSFET device includes a semiconductor wafer having source, body and drain regions of alternate conductivity type disposed therein. The source and drain regions are located so as to define the length and width of a channel region in the body region at a surface of the wafer. The body region further includes a similar conductivity type supplementary region having a relatively high areal dopant concentration. The supplementary region, which can be fabricated by ion implantation, extends laterally beneath a portion of the channel region. A source electrode is disposed on one wafer surface and a drain electrode is disposed on an opposing wafer surface.

公开(公告)号：DE2529270A1

公开(公告)日：1976-01-22

申请号：DE2529270

申请日：1975-07-01

Applicant: RCA CORP

Inventor： GOODMAN LAWRENCE ALAN ,  CARLSON DAVID EMIL

IPC: G02F1/1337 ,  G02F1/1333 ,  G09F9/35 ,  G02F1/13 ,  C03C27/00

Abstract: Glass workpieces having a conductive material film on one surface, for eventual use as substrates between which a liquid crystal material is contained, are treated to remove or deplete various impurities from a thin region within the substrates at the one surface.

公开(公告)号：DE3505393C2

公开(公告)日：1995-06-22

申请号：DE3505393

申请日：1985-02-16

Applicant: RCA CORP

Inventor： GOODMAN LAWRENCE ALAN ,  GOODMAN ALVIN MALCOLM

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/41 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/772

Abstract: A vertical MOSFET device includes a semiconductor wafer having source, body and drain regions of alternate conductivity type disposed therein. The source and drain regions are located so as to define the length and width of a channel region in the body region at a surface of the wafer. The body region further includes a similar conductivity type supplementary region having a relatively high areal dopant concentration. The supplementary region, which can be fabricated by ion implantation, extends laterally beneath a portion of the channel region. A source electrode is disposed on one wafer surface and a drain electrode is disposed on an opposing wafer surface.