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    Provision of reproducible thin layers of silicon dioxide
    1.
    发明授权
    Provision of reproducible thin layers of silicon dioxide 失效
    提供可重现的二氧化硅薄层

    公开(公告)号：US3892891A

    公开(公告)日：1975-07-01

    申请号：US25341672

    申请日：1972-05-15

    Applicant: RCA CORP

    Inventor： GOODMAN ALVIN MALCOLM ,  BREECE JAMES MIKLOS

    IPC: H01L21/316 ,  C23C11/08

    CPC classification number: H01L21/02238 ,  H01L21/02299 ,  H01L21/31662 ,  Y10S148/118 ,  Y10T29/49982

    Abstract: Conventionally cleaned silicon wafers are provided with a thermally grown layer of silicon dioxide which is thereafter removed to provide a reproducibly clean wafer surface. The wafer is then preheated at a moderate temperature, in the order of 150*C., in a controlled environment to provide reproducibly uniform conditions of temperature and wetness. A silicon dioxide layer of controlled and reproducible thickness is thereafter thermally grown on the silicon wafer.

    Abstract translation: 常规清洁的硅晶片设置有二氧化硅的热生长层，其后被去除以提供可重复清洁的晶片表面。 然后将晶片在受控环境中在约150℃的中等温度下预热，以提供可重复地均匀的温度和湿度条件。 然后在硅晶片上热生长具有受控且可再现厚度的二氧化硅层。

    VERTICAL MOSFET
    2.
    发明专利
    VERTICAL MOSFET 未知

    公开(公告)号：GB2154794A

    公开(公告)日：1985-09-11

    申请号：GB8504367

    申请日：1985-02-20

    Applicant: RCA CORP

    Inventor： GOODMAN LAWRENCE ALAN ,  GOODMAN ALVIN MALCOLM

    IPC: H01L21/336 ,  H01L29/10 ,  H01L29/41 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

    Abstract: A vertical MOSFET device includes a semiconductor wafer having source, body and drain regions of alternate conductivity type disposed therein. The source and drain regions are located so as to define the length and width of a channel region in the body region at a surface of the wafer. The body region further includes a similar conductivity type supplementary region having a relatively high areal dopant concentration. The supplementary region, which can be fabricated by ion implantation, extends laterally beneath a portion of the channel region. A source electrode is disposed on one wafer surface and a drain electrode is disposed on an opposing wafer surface.

    6.
    发明专利
    未知

    公开(公告)号：DE3505393A1

    公开(公告)日：1985-08-29

    申请号：DE3505393

    申请日：1985-02-16

    Applicant: RCA CORP

    Inventor： GOODMAN LAWRENCE ALAN ,  GOODMAN ALVIN MALCOLM

    IPC: H01L21/336 ,  H01L29/10 ,  H01L29/41 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

    Abstract: A vertical MOSFET device includes a semiconductor wafer having source, body and drain regions of alternate conductivity type disposed therein. The source and drain regions are located so as to define the length and width of a channel region in the body region at a surface of the wafer. The body region further includes a similar conductivity type supplementary region having a relatively high areal dopant concentration. The supplementary region, which can be fabricated by ion implantation, extends laterally beneath a portion of the channel region. A source electrode is disposed on one wafer surface and a drain electrode is disposed on an opposing wafer surface.

    10.
    发明专利
    未知

    公开(公告)号：DE3505393C2

    公开(公告)日：1995-06-22

    申请号：DE3505393

    申请日：1985-02-16

    Applicant: RCA CORP

    Inventor： GOODMAN LAWRENCE ALAN ,  GOODMAN ALVIN MALCOLM

    IPC: H01L21/336 ,  H01L29/10 ,  H01L29/41 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/772

    Abstract: A vertical MOSFET device includes a semiconductor wafer having source, body and drain regions of alternate conductivity type disposed therein. The source and drain regions are located so as to define the length and width of a channel region in the body region at a surface of the wafer. The body region further includes a similar conductivity type supplementary region having a relatively high areal dopant concentration. The supplementary region, which can be fabricated by ion implantation, extends laterally beneath a portion of the channel region. A source electrode is disposed on one wafer surface and a drain electrode is disposed on an opposing wafer surface.

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