公开(公告)号：US3916339A

公开(公告)日：1975-10-28

申请号：US52705374

申请日：1974-11-25

Applicant: RCA CORP

Inventor： LADANY IVAN ,  MARINELLI DONALD PAUL ,  KRESSEL HENRY ,  CANNULI VINCENT MICHAEL

IPC: H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S3/19 ,  H01S3/098

CPC classification number: H01S5/0425 ,  H01S5/0421 ,  H01S5/223 ,  H01S5/305

Abstract: A diode laser is improved in order to produce an output in a single longitudinal mode. The laser has a rectangular body with two regions of differing conductivity type material. Extending from one surface of the rectangular body and into one of the regions of differing conductivity material is a third region. Although the third region is composed of the same general conductivity type material as the region into which it extends, it is more highly doped with conductivity modifiers (more conductive). This third region extends along one surface between the ends of the body and is spaced from the sides of the body. An electrical contact stripe is positioned on the one surface so that a portion of its width overlaps a portion of the width of the third region.

Abstract translation: 改进二极管激光器以便在单个纵向模式中产生输出。 激光器具有具有不同导电类型材料的两个区域的矩形体。 从矩形体的一个表面延伸到不同导电性材料的区域之一中的是第三区域。 虽然第三区域由与其延伸的区域相同的一般导电类型的材料组成，但是它更加掺杂有导电性改性剂（更具导电性）。 该第三区域沿主体的端部之间的一个表面延伸并且与主体的侧面间隔开。 电接触条被定位在一个表面上，使得其宽度的一部分与第三区域的宽度的一部分重叠。

公开(公告)号：US3891478A

公开(公告)日：1975-06-24

申请号：US38896073

申请日：1973-08-16

Applicant: RCA CORP

Inventor： LADANY IVAN ,  CANNULI VINCENT MICHAEL

IPC: C30B19/06 ,  C30B19/10 ,  C30B19/12 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/063 ,  C30B19/106 ,  C30B19/12 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628

Abstract: In depositing on a substrate by liquid phase epitaxy an epitaxial layer of a semiconductor material having a volatile element, an initial epitaxial layer of the semiconductor material of the substrate is first grown by liquid phase epitaxy on the substrate to provide a smooth, undamaged surface which is not contaminated with the volatile element of the semiconductor material to be deposited. Immediately upon removal of the substrate from the solution from which the initial epitaxial layer is deposited, the substrate is placed in the solution from which the desired epitaxial layer is deposited. Thus, the desired epitaxial layer is deposited on a smooth, undamaged surface which is not contaminated with the volatile element of the semiconductor material.

Abstract translation: 通过液相外延沉积在衬底上的具有挥发性元素的半导体材料的外延层，首先通过衬底上的液相外延生长衬底的半导体材料的初始外延层，以提供光滑的，未损伤的表面， 不被待沉积的半导体材料的挥发性元素污染。 在从沉积初始外延层的溶液中除去衬底后，立即将衬底置于沉积所需外延层的溶液中。 因此，期望的外延层沉积在不被半导体材料的挥发性元素污染的光滑的未损伤的表面上。

公开(公告)号：US3899371A

公开(公告)日：1975-08-12

申请号：US37346273

申请日：1973-06-25

Applicant: RCA CORP

Inventor： LADANY IVAN ,  CANNULI VINCENT MICHAEL

IPC: C30B19/06 ,  C30B19/10 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/063 ,  C30B19/106 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628

Abstract: Two layers of a semiconductor material composed of three or more elements are deposited in succession by liquid phase epitaxy on a substrate. The layers may be of different conductivity types to form a PN junction therebetween. The layers are deposited from separate solutions containing the semiconductor material and a suitable dopant. During the deposition of the first layer from one of the solutions, both of the solutions are treated in the same manner so that the composition of the second layer is the same as that of the first layer at the junction between the layers.

Abstract translation: 由三个或更多个元件组成的两层半导体材料通过衬底上的液相外延连续沉积。 这些层可以具有不同的导电类型以在它们之间形成PN结。 这些层从包含半导体材料和合适的掺杂剂的分离的溶液沉积。 在从一种溶液沉积第一层期间，以相同的方式处理两种溶液，使得第二层的组成与层之间的连接处的第一层的组成相同。

公开(公告)号：US3647579A

公开(公告)日：1972-03-07

申请号：US3647579D

申请日：1968-03-28

Applicant: RCA CORP

Inventor： LADANY IVAN

IPC: H01L21/208 ,  H01L33/00 ,  H01L33/30 ,  H05B33/00 ,  H01L3/00 ,  H01L7/38

CPC classification number: H01L33/30 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L33/00 ,  H01L33/0062 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  Y10S148/107 ,  Y10S148/119 ,  Y10S148/135 ,  H01L2924/00014

Abstract: GALLIUM PHOSPHIDE LIGHT EMITTING DIODES WITH REPRODUCIBLE EXTERNAL QUANTUM EFFICIENCIES GREATER THAN 1% ARE MANLUFACTURED BY SUCCESSIVE LIQUID PHASE EPITAXIAL GROWTH OF N TYPE AND P TYPE LAYERS ON A GALLIUM PHOSHIDE SUBSTRATE WHICH MAY BE OF EITHER CONDUCTIVITY TYPE. THE N TYPE LAYER IS GROWTH FIRST FROM A MELT OF TELLURIUM AND GALLIUM PHOSPHIDE IN A GALLIUM SOLVENT. THE P TYPE LAYER IS SUBSEQUENTLY GROWN ON THE N TYPE LAYER FROM A MELT OF ZINC OXIDE, GALLIUM OXIDE AND GALLIUM PHOSPHIDE IN A GALLIUM SOLVENT.

公开(公告)号：CA1242787A

公开(公告)日：1988-10-04

申请号：CA475624

申请日：1985-03-01

Applicant: RCA CORP

Inventor： BOTEZ DAN ,  LADANY IVAN

IPC: H01S3/18

Abstract: PHASE-LOCKED LASER ARRAY WITH VARYING ELECTRICAL CURRENT DISTRIBUTION A phase locked laser array comprises a body of semiconductor material which includes structure for defining a plurality of substantially parallel lasing zones which are uniformly spaced an effective distance apart so that the propagating modes of the adjacent lasing zones are phaselocked to one another. One of the array electrodes comprises a plurality of electrical contacts extending between the end faces and having lateral unequal widths and center-to-center spacings. These contacts provide a laterally varying electrical current distribution across the plurality of lasing zones.

公开(公告)号：CA1290434C

公开(公告)日：1991-10-08

申请号：CA523766

申请日：1986-11-25

Applicant: RCA CORP

Inventor： LADANY IVAN ,  ANDREWS JAMES T

IPC: H01S3/085

Abstract: RIDGE GUIDE DISTRIBUTED FEEDBACK LASER AND METHOD OF MAKING SAME A distributed feedback laser which generates light of a specific wavelength comprises a body of semiconductor material having a cavity region positioned between first and second cladding layers of opposite conductivity. The cavity region is a ridge which extends in the longitudinal direction. The cavity region periodically varies in thickness in the longitudinal direction which is in the form of corrugations in a major surface thereof. The second cladding layer overlies the cavity region and the first cladding layer. This laser is fabricated by forming a first cladding layer overlying a substrate. A cavity layer is then formed, over the first cladding layer and corrugations are formed in a major surface of the cavity layer. Portions of the cavity layer are then removed to form the cavity region and the second cladding layer is then formed over the cavity region and the first cladding layer.

公开(公告)号：GB2109632A

公开(公告)日：1983-06-02

申请号：GB8226996

申请日：1982-09-22

Applicant: RCA CORP

Inventor： ETTENBERG MICHAEL ,  LADANY IVAN

IPC: H01L33/00 ,  H01L33/24 ,  H01S5/00 ,  H01S5/042 ,  H01L29/06 ,  H01S3/18

Abstract: A substrate 14 is overlain by a buffer layer 26 of substantially the same lattice constant, with a barrier layer 24 interposed between the substrate 14 and buffer layer 26, having the same electrical conductivity type as the buffer layer but different lattice constant from both the substrate and buffer layers. Strain is produced in the barrier layer 24 and portions of the substrate 14 and buffer layers 26 to act as a trap for defects and so prolong the life of e.g. a light emitting device 28, 30, 32, fabricated on the buffer layer 26, while keeping the strained region remote from the active region 30 of the device.

公开(公告)号：CA1269748A

公开(公告)日：1990-05-29

申请号：CA510918

申请日：1986-06-05

Applicant: RCA CORP

Inventor： LADANY IVAN

IPC: G03F7/00 ,  H01S5/12 ,  H01S5/223 ,  G03C5/00

Abstract: A method of forming a variable width channel in a body comprises the steps of forming a surface grating having a photoresist layer thereon. The photoresist layer has a plurality of depressions and a planar photomask is then positioned over the photoresist layer. The photoresist layer is subsequently exposed and developed and due to the divergence of light into the depressions covered by the photomask, forms a variable width opening. A portion of the body exposed in the opening is removed to form a channel with a sidewall having a surface contour corresponding to an edge of the opening.

公开(公告)号：DE2225824A1

公开(公告)日：1973-03-01

申请号：DE2225824

申请日：1972-05-26

Applicant: RCA CORP

Inventor： LADANY IVAN ,  WANG CHIH CHUN

IPC: C23C16/30 ,  C30B19/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/205 ,  H01L21/208 ,  H01L21/86 ,  H01L33/00 ,  H01L7/36

Abstract: 1378327 Epitaxial growth on substrate RCA CORPORATION 22 May 1972 [27 Aug 1971] 23909/72 Heading B1S [Also in Divisions Cl C4 and H1] A semiconductor structure comprises a monocrystalline insulating substrate 41, Fig. 3, having a semiconductor layer thereon, the layer consisting of a first, vapour phase deposited portion 42 of a III-V compound, and a second portion 43, also of a III-V compound and formed in continuity with portion 42, but derived from a liquid phase process. The portions may be of the same or different material, and of the same or opposite conductivity type. The portions may be of GaAs or GaAs, or GaAs x P 1-x or Ga x Al 1-x As on GaAs, GaP on GaP, or GaAs x P 1-x on GaP where o

公开(公告)号：CA1208752A

公开(公告)日：1986-07-29

申请号：CA411588

申请日：1982-09-16

Applicant: RCA CORP

Inventor： ETTENBERG MICHAEL ,  LADANY IVAN

IPC: H01L33/00 ,  H01L33/24 ,  H01S5/00 ,  H01S5/042

Abstract: SEMICONDUCTOR BODY AND LONG-LIVED LIGHT EMITTING DEVICE THEREON An improved semiconductor body upon which a light emitting device can be fabricated where the improvement is a barrier layer, which has a lattice constant different from that of the substrate and buffer layer, interposed between the substrate and the buffer layer. The strain associated with the lattice constant mismatch is believed to provide a trap for defects which migrate out of the substrate into the active region of the light emitting device. Accelerated life tests at 90.degree.C show a significant reduction in the rate of degradation of the spontaneous light output power of light emitting devices incorporating the invention.