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    Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals
    1.
    发明授权
    Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals 失效
    氢化铝镁合金单晶的外延硅

    公开(公告)号：US3658586A

    公开(公告)日：1972-04-25

    申请号：US3658586D

    申请日：1969-04-11

    Applicant: RCA CORP

    Inventor： WANG CHIH CHUN

    IPC: C30B25/18 ,  C23C16/24 ,  C30B29/06 ,  C30B29/26 ,  H01L21/205 ,  H01L21/86 ,  H01L27/12 ,  H01L29/786 ,  C23C11/00 ,  C01F7/02 ,  H01L7/62

    CPC classification number: H01L29/78657 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/86 ,  Y10S148/15 ,  Y10S438/967

    Abstract: An improvement in the manufacture of integrated electronic circuits of the type including an insulating substrate and components occupying isolated portions of an epitaxial layer of a semiconductor material on the substrate, wherein the substrate consists of a plate of single-crystal magnesium aluminate spinel having the formula MgO. x Al2O3 where x 1.5 to 2.5 and in which the method includes a step of annealing the substrate surface at a temperature of about 900* -1,400* C. The invention also includes an improved unit from which the circuit is made, comprising a single-crystal substrate body of magnesium aluminate spinel having the formula given above, where the spinel crystal contains about 0.00001 to 0.1 percent by weight of included hydrogen, and an epitaxial layer of silicon united to the substrate.

    Abstract translation: 一种包括绝缘基板的集成电子电路的制造和在基板上占据半导体材料的外延层的隔离部分的部件的改进，其中基板由具有下式的单晶铝酸镁尖晶石的板组成： MgO。 x Al 2 O 3，其中x = 1.5至2.5，并且其中所述方法包括在约900-400℃的温度下对衬底表面进行退火的步骤。本发明还包括一个改进的单元，由该单元构成电路，包括单个 具有上面给出的式子的铝酸镁尖晶石的晶体基体，其中尖晶石晶体含有约0.00001至0.1重量％的所包括的氢，并且硅的外延层与基底结合。

    Gallium phosphide deposition on stainless steel, molybdenum - or tungsten by thermal reaction of gallium tri-alkyl and phosphine gases
    3.
    发明专利
    Gallium phosphide deposition on stainless steel, molybdenum - or tungsten by thermal reaction of gallium tri-alkyl and phosphine gases 未知

    公开(公告)号：DE2550966A1

    公开(公告)日：1976-05-20

    申请号：DE2550966

    申请日：1975-11-13

    Applicant: RCA CORP

    Inventor： WANG CHIH CHUN

    IPC: H01J1/32 ,  C01B25/06 ,  C23C16/30 ,  H01J9/12 ,  C23C11/08 ,  C01B25/08 ,  H01J43/10

    Abstract: In the deposition of GaP on a substrate of stainless, Mo or W gaseous GaR3 and gaseous PR'3 (in which R and R' independently are alkyl or R' can be H), pref. GaMe3 and PH3, are reacted thermally over the substrate, pref. at 700-900 degrees C. p-Doping can be produced by treatment with gaseous ZnMe3, ZnEt2, CdMe2 or CdEt2 and n-doping by treatment with gaseous H2S. The substrate with the polycrystalline GaP and a coating of a material reducing the work function is used as electron emitter. The process makes it possible to deposit polycrystalline grp. III-V cpds. esp. GaP, on certain metal substrates, unlike the chloride process, which gives corrosive by-prods. These metal substrates have the advantages of flexibility of available shapes and low prime costs.

    5.
    发明专利
    未知

    公开(公告)号：DE2225824A1

    公开(公告)日：1973-03-01

    申请号：DE2225824

    申请日：1972-05-26

    Applicant: RCA CORP

    Inventor： LADANY IVAN ,  WANG CHIH CHUN

    IPC: C23C16/30 ,  C30B19/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/205 ,  H01L21/208 ,  H01L21/86 ,  H01L33/00 ,  H01L7/36

    Abstract: 1378327 Epitaxial growth on substrate RCA CORPORATION 22 May 1972 [27 Aug 1971] 23909/72 Heading B1S [Also in Divisions Cl C4 and H1] A semiconductor structure comprises a monocrystalline insulating substrate 41, Fig. 3, having a semiconductor layer thereon, the layer consisting of a first, vapour phase deposited portion 42 of a III-V compound, and a second portion 43, also of a III-V compound and formed in continuity with portion 42, but derived from a liquid phase process. The portions may be of the same or different material, and of the same or opposite conductivity type. The portions may be of GaAs or GaAs, or GaAs x P 1-x or Ga x Al 1-x As on GaAs, GaP on GaP, or GaAs x P 1-x on GaP where o

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