公开(公告)号：US3922420A

公开(公告)日：1975-11-25

申请号：US47509474

申请日：1974-05-31

Applicant: RCA CORP

Inventor： SCHNABLE GEORGE LUTHER ,  FELDSTEIN NATHAN

IPC: G03F1/54 ,  B32B3/10 ,  B32B17/00

CPC classification number: G03F1/54 ,  G03F1/50 ,  Y10T428/24926

Abstract: A method of making a semi-transparent photomask of the iron oxide type comprising depositing a thin film of nickel or of a nickel alloy on a glass substrate, forming on the nickel or nickel alloy film a pattern of a resist which is the negative of the desired photomask, electrolytically depositing a layer of iron on the areas of the alloy film not covered by the resist, removing the resist and heating the assembly in an oxidizing atmosphere to convert the iron layer to iron oxide and also to convert the nickel or nickel alloy film to transparent oxides, at the same time providing improved adherence.

Abstract translation: 一种制造氧化铁半透明光掩模的方法，包括在玻璃基板上沉积镍或镍合金薄膜，在镍或镍合金膜上形成抗蚀剂的图案，该图案为 在未被抗蚀剂覆盖的合金膜的区域上电解沉积铁层，除去抗蚀剂并在氧化气氛中加热组件以将铁层转化为氧化铁，并将镍或镍合金 膜到透明氧化物，同时提供改善的附着力。

公开(公告)号：IT1205089B

公开(公告)日：1989-03-10

申请号：IT2103387

申请日：1987-06-24

Applicant: RCA CORP

Inventor： SCHNABLE GEORGE LUTHER

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/68 ,  H01L23/544 ,  C30B

Abstract: Indicia are formed in a sapphire substrate by ion implantation with a sufficient amount of silicon ions to establish a contrast with the remainder of the substrate. The implant is annealed at 1050 DEG to 1200 DEG C. under an oxygen or inert atmosphere. The implants are stable to repeated heatings to elevated temperature. The implants are further beneficial in that they do not introduce a source of contamination into the substrate.

公开(公告)号：GB2198584B

公开(公告)日：1990-05-09

申请号：GB8728344

申请日：1987-12-03

Applicant: RCA CORP

Inventor： SMELTZER RONALD KEITH ,  GOODMAN ALVIN MALCOLM ,  SCHNABLE GEORGE LUTHER

IPC: H01L27/12 ,  H01L21/20 ,  H01L29/78 ,  H01L29/786

公开(公告)号：DE2923737A1

公开(公告)日：1979-12-20

申请号：DE2923737

申请日：1979-06-12

Applicant: RCA CORP

Inventor： DAWSON ROBERT HERMAN ,  SCHNABLE GEORGE LUTHER

IPC: H01L21/28 ,  H01L21/3105 ,  H01L21/316 ,  H01L23/29 ,  H01L23/31 ,  H01L23/532 ,  H01L21/314 ,  H01L21/94

公开(公告)号：GB2198584A

公开(公告)日：1988-06-15

申请号：GB8728344

申请日：1987-12-03

Applicant: RCA CORP

Inventor： SMELTZER RONALD KEITH ,  GOODMAN ALVIN MALCOLM ,  SCHNABLE GEORGE LUTHER

IPC: H01L27/12 ,  H01L21/20 ,  H01L29/78 ,  H01L29/786 ,  H01L49/02

公开(公告)号：GB2197123A

公开(公告)日：1988-05-11

申请号：GB8714909

申请日：1987-06-25

Applicant: RCA CORP

Inventor： SCHNABLE GEORGE LUTHER

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/68 ,  H01L23/544 ,  H01L21/66 ,  H01L21/86

Abstract: Indicia are formed in a sapphire substrate by ion implantation with a sufficient amount of silicon ions to establish a contrast with the remainder of the substrate. The implant is annealed at 1050 DEG to 1200 DEG C. under an oxygen or inert atmosphere. The implants are stable to repeated heatings to elevated temperature. The implants are further beneficial in that they do not introduce a source of contamination into the substrate.

公开(公告)号：GB2197123B

公开(公告)日：1990-05-09

申请号：GB8714909

申请日：1987-06-25

Applicant: RCA CORP

Inventor： SCHNABLE GEORGE LUTHER

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/68 ,  H01L23/544

Abstract: Indicia are formed in a sapphire substrate by ion implantation with a sufficient amount of silicon ions to establish a contrast with the remainder of the substrate. The implant is annealed at 1050 DEG to 1200 DEG C. under an oxygen or inert atmosphere. The implants are stable to repeated heatings to elevated temperature. The implants are further beneficial in that they do not introduce a source of contamination into the substrate.

公开(公告)号：DE2641387A1

公开(公告)日：1977-06-30

申请号：DE2641387

申请日：1976-09-15

Applicant: RCA CORP

Inventor： SCHNABLE GEORGE LUTHER ,  FISHER ALBERT WAYNE

IPC: C03B37/018 ,  C23C16/40 ,  G02B6/00 ,  H01B3/08 ,  C23C11/08

公开(公告)号：DE2533550A1

公开(公告)日：1976-02-19

申请号：DE2533550

申请日：1975-07-26

Applicant: RCA CORP

Inventor： FISHER ALBERT WAYNE ,  SCHNABLE GEORGE LUTHER

IPC: H01L21/306 ,  H01L21/322 ,  H01L21/324

公开(公告)号：IT1223135B

公开(公告)日：1990-09-12

申请号：IT2265987

申请日：1987-11-17

Applicant: RCA CORP

Inventor： SMELTZER RONALD KEITH ,  GOODMAN ALVIN MALCOLM ,  SCHNABLE GEORGE LUTHER

IPC: H01L27/12 ,  H01L21/20 ,  H01L29/78 ,  H01L29/786