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1.Method of forming aligned oxide patterns on opposite surfaces of a wafer of semiconductor material 失效
Title translation: 在半导体材料的晶片的相对表面上形成对准的氧化物图案的方法公开(公告)号:US3404073A
公开(公告)日:1968-10-01
申请号:US48742765
申请日:1965-09-15
Applicant: RCA CORP
Inventor: SCOTT JR JOSEPH H
IPC: H01L21/316
CPC classification number: H01L21/02238 , H01L21/02258 , H01L21/31675
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2.Method for forming of semiconductor devices by masking and diffusion 失效
Title translation: 通过掩蔽和扩散形成半导体器件的方法公开(公告)号:US3383251A
公开(公告)日:1968-05-14
申请号:US51297565
申请日:1965-12-10
Applicant: RCA CORP
Inventor: SCOTT JR JOSEPH H
CPC classification number: H01L21/00 , C23C10/04 , C23C16/042 , C23C16/402 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/31625 , H01L23/291 , H01L2924/0002 , Y10S438/943 , Y10S438/965 , H01L2924/00
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3.Semiconductor devices having modifier-containing surface oxide layer 失效
Title translation: 具有含改性剂的表面氧化物层的半导体器件公开(公告)号:US3340445A
公开(公告)日:1967-09-05
申请号:US42052364
申请日:1964-12-23
Applicant: RCA CORP
Inventor: SCOTT JR JOSEPH H , OLMSTEAD JOHN A
IPC: C23C16/40 , H01L21/00 , H01L21/225 , H01L21/316 , H01L29/00
CPC classification number: H01L21/00 , C23C16/402 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/2255 , H01L21/2258 , H01L21/31612 , H01L29/00
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公开(公告)号:US3298879A
公开(公告)日:1967-01-17
申请号:US35395764
申请日:1964-03-23
Applicant: RCA CORP
Inventor: SCOTT JR JOSEPH H , MCIVER GEORGE W
IPC: C30B31/18 , H01L21/00 , H01L21/225
CPC classification number: H01L21/2258 , C30B31/185 , H01L21/00 , Y10S148/043 , Y10S148/051 , Y10S148/065 , Y10S148/106
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公开(公告)号:US3200019A
公开(公告)日:1965-08-10
申请号:US16734162
申请日:1962-01-19
Applicant: RCA CORP
Inventor: SCOTT JR JOSEPH H , JOHN OLMSTEAD
IPC: C23C16/40 , H01L21/00 , H01L21/225 , H01L21/316 , H01L29/00
CPC classification number: H01L21/00 , C23C16/402 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/2255 , H01L21/2258 , H01L21/31612 , H01L29/00 , Y10S148/043 , Y10S148/118 , Y10S148/145 , Y10S252/951
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