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公开(公告)号：US3884539A
公开(公告)日：1975-05-20
申请号：US44793674
申请日：1974-03-04
Applicant: RCA CORP
Inventor： SOMMER ALFRED HERMANN
CPC classification number: H01J9/125 , H01J2201/32
Abstract: An S-20 response multialkali photocathode is produced by exposing a layer of antimony to activating vapors of potassium, sodium, and cesium. In one method the antimony layer is exposed to cesium at a temperature of about 240*C. prior to exposure to potassium or sodium, and the exposing to cesium is terminated before the photosensitivity reaches a peak. In another method, the antimony layer is exposed to cesium at a temperature of about 240*C. subsequent to exposure to potassium and sodium, and the exposing to cesium is terminated when the photosensitivity reaches a peak.
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公开(公告)号：US3858955A
公开(公告)日：1975-01-07
申请号：US32374673
申请日：1973-01-15
Applicant: RCA CORP
Inventor： SOMMER ALFRED HERMANN
CPC classification number: H01J9/12 , H01J43/20 , H01J2201/32 , H01J2201/34
Abstract: A III-V compound cathode is produced by exposing the cathode to cesium or cesium and oxygen, then exposing it to an increasing concentration of cesium while heating to about 150*C. The cathode is maintained at about 150*C, then exposed to a decreasing concentration of cesium while cooling. Also disclosed is an electron-emissive tube containing a cesium buffer source of a material incompletely reacted with cesium. The buffer source provides the increasing and decreasing concentrations of cesium for the above heating step.
Abstract translation: 通过将阴极暴露于铯或铯和氧，然后在加热至约150℃的同时将其暴露于浓度增加的铯来制备III-V复合阴极。将阴极保持在约150℃，然后暴露于 降低铯浓度降低。
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公开(公告)号：AU5637173A
公开(公告)日：1974-12-05
申请号：AU5637173
申请日：1973-05-31
Applicant: RCA CORP
Inventor： SOMMER ALFRED HERMANN
IPC: H01J40/06 , H01J1/30 , H01J1/308 , H01J1/34 , H01J1/35 , H01J9/02 , H01J9/12 , H01L21/324 , H01L31/18 , H01L7/00 , C23C15/00
Abstract: 1414400 Cathode materials and processing RCA CORPORATION 23 May 1973 [2 June 1972] 24533/73 Heading H1D A negative effective electron affinity electron emitter is formed by heating a P-type Si body in vacuum at 1100-1420‹ C., applying a work function reducing material, reheating at a lower temperature and applying further said material. The method avoids cleaning Si by sputtering and subsequent annealing. A Si reflecting photocathode is prepared by mounting a P-type monocrystalline Si disc 14 in a discharge tube envelope from which extends an exhaust tube 22 including containers 26, 28 with material which releases Cs and O when heated. The envelope is degassed by baking and the disc heated by current through leads 21 to 1300‹ C. for 3 seconds. On cooling Cs is released until photoemission passes a maximum, then O 2 is released until photoemission reaches a maximum. The heating and sensitizing may be repeated. The cathode is heated to 1000‹ C. for 3 seconds and on cooling sensitized with Cs and O. These heating and sensitizing steps may be repeated until the desired photosensitivity is achieved. The Cs may be replaced by Rb. The method is used for secondary emissive dynodes and P-N cold cathodes.
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公开(公告)号：DE2325869A1
公开(公告)日：1973-12-20
申请号：DE2325869
申请日：1973-05-22
Applicant: RCA CORP
Inventor： SOMMER ALFRED HERMANN
IPC: H01J40/06 , H01J1/30 , H01J1/308 , H01J1/34 , H01J1/35 , H01J9/02 , H01J9/12 , H01L21/324 , H01L31/18
Abstract: 1414400 Cathode materials and processing RCA CORPORATION 23 May 1973 [2 June 1972] 24533/73 Heading H1D A negative effective electron affinity electron emitter is formed by heating a P-type Si body in vacuum at 1100-1420‹ C., applying a work function reducing material, reheating at a lower temperature and applying further said material. The method avoids cleaning Si by sputtering and subsequent annealing. A Si reflecting photocathode is prepared by mounting a P-type monocrystalline Si disc 14 in a discharge tube envelope from which extends an exhaust tube 22 including containers 26, 28 with material which releases Cs and O when heated. The envelope is degassed by baking and the disc heated by current through leads 21 to 1300‹ C. for 3 seconds. On cooling Cs is released until photoemission passes a maximum, then O 2 is released until photoemission reaches a maximum. The heating and sensitizing may be repeated. The cathode is heated to 1000‹ C. for 3 seconds and on cooling sensitized with Cs and O. These heating and sensitizing steps may be repeated until the desired photosensitivity is achieved. The Cs may be replaced by Rb. The method is used for secondary emissive dynodes and P-N cold cathodes.
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Patent Agency Ranking
公开(公告)号：DE1193618B
公开(公告)日：1965-05-26
申请号：DER0016169
申请日：1955-03-08
Applicant: RCA CORP
Inventor： SOMMER ALFRED HERMANN
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公开(公告)号：AU3793472A
公开(公告)日：1973-07-19
申请号：AU3793472
申请日：1972-01-14
Applicant: RCA CORP
Inventor： SOMMER ALFRED HERMANN
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公开(公告)号：DE1269253B
公开(公告)日：1968-05-30
申请号：DE1269253
申请日：1956-12-05
Applicant: RCA CORP
Inventor： SOMMER ALFRED HERMANN
Abstract: 842,894. Cathode materials and processing. RADIO CORPORATION OF AMERICA. Nov. 12, 1956 [Dec. 5, 1955], No. 34562/56. Class 39(1). A photocathode comprises a transparent supporting base 14 coated with a transparent film 54 of potassium, and an overlying layer 60 of antimony which is activated by a plurality of alkali metals one of which is potassium. These alkali metal activators are provided in carriers 45, 46, 47, each of which contains a suit able reaction mixture for evolving respectively (in the particular example described) potassium, sodium, and caesium, when heated. The antimony is provided in the form of pellets 52 spaced along a heating filament 40. Initially, a thin film of potassium is deposited on the heated tube face until the measured photoemission reaches a peak value. The antimony is deposited at room temperature to a predetermined thickness measured in terms of light transmission. Further deposition over the antimony film of potassium, then sodium, and finally caesium, is made, with possibly further deposition of antimony between each deposit of alkali metal. Different combinations of these or other alkali metals may be used. The invention is described with reference to a television camera tube such as an image orthicon, and it is stated that uniformity of emission is much improved thereby.
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公开(公告)号：MX2985E
公开(公告)日：1980-01-23
申请号：MX652573
申请日：1973-03-29
Applicant: RCA CORP
Inventor： SOMMER ALFRED HERMANN
IPC: H01J40/06 , H01J1/30 , H01J1/308 , H01J1/34 , H01J1/35 , H01J9/02 , H01J9/12 , H01L21/324 , H01L31/18 , H01J19/00
Abstract: 1414400 Cathode materials and processing RCA CORPORATION 23 May 1973 [2 June 1972] 24533/73 Heading H1D A negative effective electron affinity electron emitter is formed by heating a P-type Si body in vacuum at 1100-1420‹ C., applying a work function reducing material, reheating at a lower temperature and applying further said material. The method avoids cleaning Si by sputtering and subsequent annealing. A Si reflecting photocathode is prepared by mounting a P-type monocrystalline Si disc 14 in a discharge tube envelope from which extends an exhaust tube 22 including containers 26, 28 with material which releases Cs and O when heated. The envelope is degassed by baking and the disc heated by current through leads 21 to 1300‹ C. for 3 seconds. On cooling Cs is released until photoemission passes a maximum, then O 2 is released until photoemission reaches a maximum. The heating and sensitizing may be repeated. The cathode is heated to 1000‹ C. for 3 seconds and on cooling sensitized with Cs and O. These heating and sensitizing steps may be repeated until the desired photosensitivity is achieved. The Cs may be replaced by Rb. The method is used for secondary emissive dynodes and P-N cold cathodes.
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