公开(公告)号：US10366755B2

公开(公告)日：2019-07-30

申请号：US16056321

申请日：2018-08-06

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Naoya Watanabe ,  Futoshi Igaue

IPC: G11C15/00 ,  G11C15/04

Abstract: The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding first control signal is activated.

公开(公告)号：US08599639B2

公开(公告)日：2013-12-03

申请号：US13900210

申请日：2013-05-22

Applicant: Renesas Electronics Corporation

Inventor： Mihoko Akiyama ,  Futoshi Igaue ,  Kenji Yoshinaga ,  Masashi Matsumura ,  Fukashi Morishita

IPC: G11C5/14

CPC classification number: G05F1/468 ,  G11C5/025 ,  G11C5/147

Abstract: A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.

公开(公告)号：US09824757B2

公开(公告)日：2017-11-21

申请号：US15227161

申请日：2016-08-03

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Naoya Watanabe ,  Futoshi Igaue

IPC: G11C15/00 ,  G11C15/04

CPC classification number: G11C15/04 ,  G11C15/00 ,  G11C15/046

Abstract: The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding first control signal is activated.

公开(公告)号：US10910055B2

公开(公告)日：2021-02-02

申请号：US16137305

申请日：2018-09-20

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Futoshi Igaue

IPC: G11C15/04 ,  G11C29/44 ,  G11C29/38 ,  G11C29/00 ,  G11C29/02

Abstract: The present invention provides a semiconductor device that can reduce the power consumption, including: a plurality of search memory cells arranged in a matrix; a plurality of match lines provided corresponding to each memory cell row to determine match/mismatch between data stored in the search memory cell and search data; a plurality of match line retention circuits provided corresponding to each of the match lines; a storage unit for storing information relating to the state of each of the match lines; and a selection circuit for selectively activating the match line retention circuits based on the information stored in the storage unit.

公开(公告)号：US10121541B2

公开(公告)日：2018-11-06

申请号：US15228631

申请日：2016-08-04

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Futoshi Igaue ,  Kenji Yoshinaga ,  Naoya Watanabe ,  Mihoko Akiyama

IPC: G06F12/00 ,  G11C15/04

Abstract: The present invention makes it possible to form a circuit configuration that is capable of executing a keyword search at an increased speed while suppressing an increase in the memory capacity of a content-addressable memory. A semiconductor device according to an aspect of the present invention searches an input data string for a predesignated keyword, and includes a first content-addressable memory that stores a partial keyword corresponding to a predetermined number of data beginning with the first data of the keyword, a second content-addressable memory that stores the entirety of the keyword, and a control circuit that is coupled to the first content-addressable memory and to the second content-addressable memory. When a portion matching the partial keyword is detected in the input data string by a search in the first content-addressable memory, the second content-addressable memory executes a search on search data extracted from the input data string.

公开(公告)号：US10068646B2

公开(公告)日：2018-09-04

申请号：US15787406

申请日：2017-10-18

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Naoya Watanabe ,  Futoshi Igaue

IPC: G11C15/00 ,  G11C15/04

Abstract: The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding first control signal is activated.