中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.027 seconds)

    Semiconductor device and information processing system
    1.
    发明授权
    Semiconductor device and information processing system 有权

    公开(公告)号：US10121541B2

    公开(公告)日：2018-11-06

    申请号：US15228631

    申请日：2016-08-04

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Futoshi Igaue ,  Kenji Yoshinaga ,  Naoya Watanabe ,  Mihoko Akiyama

    IPC: G06F12/00 ,  G11C15/04

    Abstract: The present invention makes it possible to form a circuit configuration that is capable of executing a keyword search at an increased speed while suppressing an increase in the memory capacity of a content-addressable memory. A semiconductor device according to an aspect of the present invention searches an input data string for a predesignated keyword, and includes a first content-addressable memory that stores a partial keyword corresponding to a predetermined number of data beginning with the first data of the keyword, a second content-addressable memory that stores the entirety of the keyword, and a control circuit that is coupled to the first content-addressable memory and to the second content-addressable memory. When a portion matching the partial keyword is detected in the input data string by a search in the first content-addressable memory, the second content-addressable memory executes a search on search data extracted from the input data string.

    Content addressable memory
    3.
    发明授权
    Content addressable memory 有权
    内容可寻址内存

    公开(公告)号：US09142295B2

    公开(公告)日：2015-09-22

    申请号：US14529074

    申请日：2014-10-30

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Naoya Watanabe

    IPC: G11C15/00 ,  G11C15/04

    CPC classification number: G11C15/04 ,  G11C15/00

    Abstract: A content addressable memory includes a memory array having a plurality of match lines extending in a first direction, a plurality of search lines extending in a second direction perpendicular to the first direction, and a plurality of memory cells, each disposed at points where the match lines and the search lines intersect. The content addressable memory also includes a plurality of search line drivers, each of the search line drivers being provided to drive the search lines based on search data; a search control circuit generating a search line enable signal, and including a first and a second transistor, the first transistor) for output the search line enable signal and the second transistor for receiving the search line enable signal; and a control signal wiring coupled to the search control circuit and transmitting the search line enable signal to each of the search line drivers.

    Abstract translation: 内容可寻址存储器包括具有沿第一方向延伸的多个匹配线的多个存储器阵列，与第一方向垂直的第二方向延伸的多个搜索线，以及多个存储器单元，每个存储器单元设置在匹配点 线条和搜索线相交。 内容可寻址存储器还包括多个搜索线驱动器，每个搜索线驱动器被提供以基于搜索数据驱动搜索线; 搜索控制电路，产生搜索线使能信号，并且包括用于输出搜索线使能信号的第一和第二晶体管，第一晶体管）和用于接收搜索线使能信号的第二晶体管; 以及耦合到搜索控制电路并且将搜索线使能信号发送到每个搜索线驱动器的控制信号布线。

    Content addressable memory
    5.
    发明授权
    Content addressable memory 有权
    内容可寻址内存

    公开(公告)号：US09042148B2

    公开(公告)日：2015-05-26

    申请号：US14151606

    申请日：2014-01-09

    Applicant: Renesas Electronics Corporation

    Inventor： Naoya Watanabe ,  Isamu Hayashi ,  Teruhiko Amano ,  Fukashi Morishita ,  Kenji Yoshinaga ,  Mihoko Akiyama ,  Shinya Miyazaki ,  Masakazu Ishibashi ,  Katsumi Dosaka

    IPC: G11C15/00 ,  G11C15/04 ,  G11C7/14 ,  G11C7/06 ,  G11C7/12 ,  G11C7/22

    CPC classification number: G11C15/043 ,  G11C7/06 ,  G11C7/12 ,  G11C7/14 ,  G11C7/22 ,  G11C15/04 ,  G11C15/046

    Abstract: An entry including multiple bits of unit cells each storing data bit is coupled to a match line. The match line is supplied with a charging current having a restricted current value smaller than a match line current flowing in a one-bit miss state in one entry, but larger than a match line current flowing in an all-bit match state in one entry. A precharge voltage level of a match line is restricted to a voltage level of half a power supply voltage or smaller. Power consumption in a search cycle of a content addressable memory can be reduced, and a search operation speed can be increased.

    Abstract translation: 包括存储数据位的单位单元的多个比特的条目耦合到匹配线。 匹配线具有一个充电电流，该充电电流的限制电流值小于在一个条目中以一位未命中状态流动的匹配线电流，但大于在一个条目中以全位匹配状态流动的匹配线电流 。 匹配线的预充电电压电平被限制为电源电压的一半或更小的电压电平。 可以减少内容可寻址存储器的搜索周期中的功耗，并且可以提高搜索操作速度。

Patent Agency Ranking