METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS
    1.
    发明申请
    METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS 审中-公开
    用于薄层的非破坏性计量的方法和系统

    公开(公告)号:WO2017079322A1

    公开(公告)日:2017-05-11

    申请号:PCT/US2016/060147

    申请日:2016-11-02

    Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

    Abstract translation: 通过执行以下步骤来实现确定集成电路(IC)的层的属性,所述层形成在底层上方:照射IC以由此从IC喷射电子; 收集从IC发射的电子并确定发射的电子的动能,从而计算从该层发射的电子和从底层发射的电子的发射强度,计算从该层发射的电子的发射强度与从该层发射的电子的比率 底层; 并使用该比率来确定层的材料组成或厚度。 照射IC和收集电子的步骤可以使用X射线光电子能谱(XPS)或X射线荧光能谱(XRF)来进行。

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