公开(公告)号：US20180025897A1

公开(公告)日：2018-01-25

申请号：US15550014

申请日：2016-02-10

Applicant: REVERA, INCORPORATED

Inventor： David A. REED ,  Bruno W SCHUELER ,  Bruce H NEWCOME ,  Rodney SMEDT ,  Chris BEVIS

IPC: H01J49/14 ,  G01Q10/04 ,  G01N23/22 ,  H01L21/66 ,  H01J49/26

CPC classification number: H01J49/142 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26 ,  H01L22/12

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

公开(公告)号：US20170160081A1

公开(公告)日：2017-06-08

申请号：US15322093

申请日：2015-06-19

Applicant: ReVera, Incorporated

Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

IPC: G01B15/02 ,  G01N23/227

CPC classification number: G01B15/02 ,  G01N23/223 ,  G01N23/2273

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

公开(公告)号：US10082390B2

公开(公告)日：2018-09-25

申请号：US15322093

申请日：2015-06-19

Applicant: ReVera, Incorporated

Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

IPC: G01B15/02 ,  G01N23/223 ,  G01N23/2273

CPC classification number: G01B15/02 ,  G01N23/22 ,  G01N23/223 ,  G01N23/225 ,  G01N23/2251 ,  G01N23/2273

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

公开(公告)号：WO2015112444A1

公开(公告)日：2015-07-30

申请号：PCT/US2015/011753

申请日：2015-01-16

Applicant: REVERA, INCORPORATED

Inventor： POIS, Heath A. ,  REED, David A. ,  SCHUELER, Bruno W. ,  SMEDT, Rodney ,  FANTON, Jeffrey T.

IPC: G01B15/00 ,  G01N23/223 ,  H01L21/66

CPC classification number: G01N23/201 ,  G01N2223/054 ,  H01L22/12

Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

Abstract translation: 公开了使用多角度X射线反射散射法（XRS）测量周期性结构的方法和系统。 例如，通过X射线反射散射测定样品的方法包括将入射的X射线束照射在具有周期性结构的样品上以产生散射的X射线束，入射的X射线束同时提供多个 入射角和多个方位角。 该方法还涉及收集散射的X射线束的至少一部分。

公开(公告)号：TW201534863A

公开(公告)日：2015-09-16

申请号：TW104102157

申请日：2015-01-22

Applicant: 理福來有限公司 ,  REVERA INCORPORATED

Inventor： 波伊斯 希斯A ,  POIS, HEATH A. ,  瑞德 大衛A ,  REED, DAVID A. ,  舒勒 布魯諾W ,  SCHUELER, BRUNO W. ,  史密德 羅尼 ,  SMEDT, RODNEY ,  范頓 傑佛瑞T ,  FANTON, JEFFREY T.

IPC: G01B15/04

CPC classification number: G01N23/201 ,  G01N2223/054 ,  H01L22/12

Abstract: 本發明揭示用於使用多角度X光反射散射(XRS)量測週期結構之方法及系統。舉例而言，一種藉由X光反射散射量測一樣本之方法涉及將一入射X光束照射於具有一週期結構之一樣本上以產生一經散射X光束，該入射X光束同時提供複數個入射角及複數個方位角。該方法亦涉及收集該經散射X光束之至少一部分。

Abstract in simplified Chinese: 本发明揭示用于使用多角度X光反射散射(XRS)量测周期结构之方法及系统。举例而言，一种借由X光反射散射量测一样本之方法涉及将一入射X光束照射于具有一周期结构之一样本上以产生一经散射X光束，该入射X光束同时提供复数个入射角及复数个方位角。该方法亦涉及收集该经散射X光束之至少一部分。

公开(公告)号：TW201614225A

公开(公告)日：2016-04-16

申请号：TW104120222

申请日：2015-06-24

Applicant: 雷韋拉股份有限公司 ,  REVERA INCORPORATED

Inventor： 波伊什 希思A ,  POIS, HEATH A. ,  李 維迪 ,  LEE, WEI TI ,  博特 勞倫斯V ,  BOT, LAWRENCE V. ,  關 永超 ,  KWAN, MICHAEL C. ,  克拉雷 馬克 ,  KLARE, MARK ,  拉森 湯姆 ,  LARSON, TOM

IPC: G01N23/22 ,  G01N23/223 ,  G01N23/227 ,  G01B15/02

CPC classification number: G01B15/02 ,  G01N23/223 ,  G01N23/2273

Abstract: 揭露使用XPS與XRF技術用於多層與多程序資訊之前授的方法和系統。在一個例子中，一種薄膜特徵化方法包含對於具有一基板之上的一第一層的一試樣，量測第一XPS與XRF強度訊號。該第一層的厚度係基於該第一XPS與XRF強度訊號加以決定。該第一層與該基板的資訊係加以結合，以估算一有效基板。對於具有該基板之上的該第一層之上的一第二層的一試樣，量測第二XPS與XRF強度訊號。該方法亦包含基於該第二XPS與XRF強度訊號，決定該第二層的厚度，該厚度將該有效基板列入考量。

Abstract in simplified Chinese: 揭露使用XPS与XRF技术用于多层与多进程信息之前授的方法和系统。在一个例子中，一种薄膜特征化方法包含对于具有一基板之上的一第一层的一试样，量测第一XPS与XRF强度信号。该第一层的厚度系基于该第一XPS与XRF强度信号加以决定。该第一层与该基板的信息系加以结合，以估算一有效基板。对于具有该基板之上的该第一层之上的一第二层的一试样，量测第二XPS与XRF强度信号。该方法亦包含基于该第二XPS与XRF强度信号，决定该第二层的厚度，该厚度将该有效基板列入考量。

公开(公告)号：WO2017079322A1

公开(公告)日：2017-05-11

申请号：PCT/US2016/060147

申请日：2016-11-02

Applicant: REVERA INCORPORATED

Inventor： LEE, Wei Ti ,  POIS, Heath ,  KLARE, Mark ,  BOZDOG, Cornel

IPC: H01L21/00

CPC classification number: G01N23/2208 ,  G01B11/06 ,  G01B15/02 ,  G01N23/223 ,  G01N23/2273 ,  G01N2223/305 ,  G01N2223/633 ,  H01L22/12

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

Abstract translation: 通过执行以下步骤来实现确定集成电路（IC）的层的属性，所述层形成在底层上方：照射IC以由此从IC喷射电子; 收集从IC发射的电子并确定发射的电子的动能，从而计算从该层发射的电子和从底层发射的电子的发射强度，计算从该层发射的电子的发射强度与从该层发射的电子的比率 底层; 并使用该比率来确定层的材料组成或厚度。 照射IC和收集电子的步骤可以使用X射线光电子能谱（XPS）或X射线荧光能谱（XRF）来进行。

公开(公告)号：WO2016130690A1

公开(公告)日：2016-08-18

申请号：PCT/US2016/017370

申请日：2016-02-10

Applicant: REVERA, INCORPORATED

Inventor： REED, David A. ,  SCHUELER, Bruno W. ,  NEWCOME, Bruce H. ,  SMEDT, Rodney ,  BEVIS, Chris

IPC: H01J49/26 ,  H01J49/10 ,  H01L21/66

CPC classification number: H01J49/142 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26 ,  H01L22/12

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

Abstract translation: 公开了使用二次离子质谱（SIMS）的半导体测量和表面分析的系统和方法。 在一个实例中，二次离子质谱（SIMS）系统包括样品台。 一次离子束被引导到样品台。 提取透镜指向样品台。 提取透镜被配置为为从样品台上的样品发射的二次离子提供低提取场。 磁扇区光谱仪沿着SIMS系统的光路耦合到提取透镜。 磁扇区光谱仪包括耦合到磁扇区分析仪（MSA）的静电分析仪（ESA）。

公开(公告)号：WO2006118811A2

公开(公告)日：2006-11-09

申请号：PCT/US2006/014942

申请日：2006-04-19

Applicant: REVERA INCORPORATED ,  ORROCK, James ,  LARSON, Thomas, C. ,  SCHUELER, Bruno ,  BOT, Lawrence ,  QUIGLEY, James ,  GURER, Emir

Inventor： ORROCK, James ,  LARSON, Thomas, C. ,  SCHUELER, Bruno ,  BOT, Lawrence ,  QUIGLEY, James ,  GURER, Emir

IPC: G06F15/00

CPC classification number: G01N23/2273

Abstract: According to one embodiment of the invention, a method for analyzing data from an instrument is disclosed. The raw data generated by the instrument, along with configuration data generated by a user, is packaged into a calling model. The raw data may include, for example, counts having a certain kinetic energy when analyzing photoelectron spectroscopy data. The configuration data may include several parameters selected by the user based on the composition and configuration of the structure being measured. The calling model may serve as an interface between the instrument and an engine for generating an algorithm for returning desired results to the user. The engine then generates the algorithm as well as the results specified by the user, and the calling model returns the results to the user. This allows a specific algorithm and results for a specific measured sample or structure to be generated using known algorithms and functions.

Abstract translation: 根据本发明的一个实施例，公开了一种用于分析来自仪器的数据的方法。 由仪器生成的原始数据以及用户生成的配置数据被打包成一个呼叫模型。 原始数据可以包括例如在分析光电子能谱数据时具有一定动能的计数。 配置数据可以包括基于所测量结构的组成和配置的用户选择的几个参数。 呼叫模型可以用作仪器和引擎之间的接口，用于生成用于将期望结果返回给用户的算法。 然后，引擎生成算法以及用户指定的结果，调用模型将结果返回给用户。 这允许使用已知的算法和功能来生成特定的测量样本或结构的特定算法和结果。

公开(公告)号：WO2015164417A1

公开(公告)日：2015-10-29

申请号：PCT/US2015/026935

申请日：2015-04-21

Applicant: REVERA, INCORPORATED

Inventor： POIS, Heath A. ,  LEE, Wei Ti

IPC: G01D21/02 ,  G01B15/02 ,  G01N23/227 ,  G01N23/223

CPC classification number: G01N23/2206 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  G01N23/2273 ,  G01N2223/61 ,  G01N2223/6116

Abstract: Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.

Abstract translation: 描述了使用组合XPS和XRF技术的硅锗厚度和成分测定的系统和方法。 在一个示例中，用于表征硅锗膜的方法包括产生X射线束。 样品位于所述X射线束的通路中。 收集通过用所述X射线束轰击所述样品产生的X射线光电子能谱（XPS）信号。 还收集通过用所述X射线束轰击所述样品产生的X射线荧光（XRF）信号。 硅锗膜的厚度或组成或两者均由XRF信号或XPS信号或两者确定。