Abstract:
An optical metrology system (50) is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films (310) such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse (325)focused onto a wafer surface, measuring a first set of x1, y1 and z1 coordinates (330) moving the wafer in the z direction, directing the light pulse (325) onto the wafer surface and measuring a second set of x2, y2 and z2 coordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus. Hardware calibration and adjustments for the optical metrology system are also provided in order to minimize the variation of the results from tool to tool down to about 0.5 % or below.
Abstract:
An automatically adjustable method for use in opto-acoustic metrology or other types of metrology operations is described. The method includes modifying the operation of a metrology system that uses a PSD style sensor arrangement. The method may be used to quickly adjust the operation of a metrology system to ensure that the data obtained therefrom are of the desired quality. Further, the method is useful in searching for and optimizing data that is or can be correlated to substrate or sample features or characteristics that of interest. Apparatus and computer readable media are also described.
Abstract:
An automatically adjustable method for use in opto-acoustic metrology or other types of metrology operations is described. The method includes modifying the operation of a metrology system that uses a PSD style sensor arrangement. The method may be used to quickly adjust the operation of a metrology system to ensure that the data obtained therefrom are of the desired quality. Further, the method is useful in searching for and optimizing data that is or can be correlated to substrate or sample features or characteristics that of interest. Apparatus and computer readable media are also described.
Abstract:
A system comprising a means for generating an optical pump beam pulse (15) and for directing the optical pump beam pulse (15) to a first area of a surface of a sample (27) having a plurality of film layers to generate an acoustic signal, a means for generating an x-ray probe pulse (17) and for directing the x-ray probe pulse (17) to a second area of the surface, a means for detecting (33) an intensity of a diffracted x-ray probe pulse (17') the intensity varying in response to the acoustic signal to form a probe pulse response signal, and a means for calculating (51) an expected transient response to a theoretical acoustic signal propagated through a model of the sample and fitting the probe pulse response to the transient response to derive at least one characteristic of the sample (27).
Abstract:
A system and method for identifying one or more characteristics of a structure formed into a substrate is herein disclosed. Surface and bulk acoustic waves are induced in the substrate and travel past a structure of interest where the acoustic waves are sensed. Information concerning one or more characteristics of the structure is encoded in the wave. The encoded information is assessed to determine the characteristic of interest.
Abstract:
An optical metrology system (50) is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films (310) such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse (325)focused onto a wafer surface, measuring a first set of x 1 , y 1 and z 1 coordinates (330) moving the wafer in the z direction, directing the light pulse (325) onto the wafer surface and measuring a second set of x 2 , y 2 and z 2 coordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus. Hardware calibration and adjustments for the optical metrology system are also provided in order to minimize the variation of the results from tool to tool down to about 0.5 % or below.