公开(公告)号：EP2023393A1

公开(公告)日：2009-02-11

申请号：EP06756849.3

申请日：2006-05-31

Applicant: Renesas Technology Corp.

Inventor： TAKAURA, Norikatsu ,  MATSUI, Yuichi ,  TERAO, Motoyasu ,  FUJISAKI, Yoshihisa ,  MATSUZAKI, Nozomu ,  KUROTSUCHI, Kenzo ,  MORIKAWA, Takahiro

IPC: H01L27/105 ,  G11C13/00 ,  H01L45/00

CPC classification number: G11C13/0004 ,  G11C8/08 ,  G11C13/0028 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

Abstract: On an insulating film (41) in which a plug (43) as a lower electrode is embedded, a laminated layer pattern of an insulating film (51) made of tantalum oxide, a recording layer (52) made of Ge-Sb-Te based chalcogenide to which indium is introduced and an upper electrode film (53) made of tungsten or tungsten alloy is formed, thereby forming a phase change memory. By interposing the insulating film (51) between the recording layer (52) and the plug (43), an effect of reducing programming current of a phase change memory and an effect of preventing peeling of the recording layer (52) can be achieved. Further, by using the Ge-Sb-Te based chalcogenide to which indium is introduced as the recording layer (52), the difference in work function between the insulating film (51) and the recording layer (52) is increased, and the programming voltage of the phase change memory can be reduced.

Abstract translation: 在其中嵌入作为下电极的插头（43）的绝缘膜（41）上，由氧化钽制成的绝缘膜（51）的叠层图案，由Ge-Sb-Te制成的记录层 导入铟的硫属化合物和由钨或钨合金制成的上电极膜（53），从而形成相变存储器。 通过在记录层（52）和插塞（43）之间插入绝缘膜（51），可以实现降低相变存储器的编程电流的效果和防止记录层（52）的剥离的效果。 此外，通过使用引入了铟的Ge-Sb-Te类硫族化物作为记录层（52），绝缘膜（51）和记录层（52）之间的功函数差增大，编程 可以减小相变存储器的电压。