公开(公告)号：US20040203257A1

公开(公告)日：2004-10-14

申请号：US10697277

申请日：2003-10-31

Applicant: Renesas Technology Corp.

Inventor： Takeshi Yoshida ,  Tohru Koyama ,  Yoji Mashiko

IPC: H01L021/26 ,  H01L021/00 ,  G02B003/00 ,  H01L031/0232 ,  C03C015/00

CPC classification number: H01L21/268 ,  G02B3/00

Abstract: A processing technique of a semiconductor substrate which can improve a capability of a solid immersion lens in case of processing the semiconductor substrate and forming the solid immersion lens on its surface is provided. A focused ion beam (5) is irradiated on a semiconductor substrate (1), and a salient part (2) acting as a solid immersion lens is formed on its main surface (3a). At this time, a cutting amount of the semiconductor substrate (1) by the focused ion beam (5) is adjusted by making the irradiation time of the focused ion beam (5) to the semiconductor substrate (1) change. According to this, a surface of the salient part (2) has a curved surface of high precision, and a capability of the salient part (2) as the solid immersion lens is improved.

Abstract translation: 提供了半导体衬底的处理技术，其可以在处理半导体衬底并在其表面上形成固体浸没透镜的情况下提高固体浸没透镜的能力。 聚焦离子束（5）照射在半导体衬底（1）上，并且在其主表面（3a）上形成用作固体浸没透镜的突出部分（2）。 此时，通过使聚焦离子束（5）对半导体基板（1）的照射时间发生变化来调整通过聚焦离子束（5）的切割量的半导体基板（1）。 据此，突出部（2）的表面具有高精度的曲面，提高了作为固体浸没透镜的突出部（2）的能力。

公开(公告)号：US20040188789A1

公开(公告)日：2004-09-30

申请号：US10684507

申请日：2003-10-15

Applicant: Renesas Technology Corp.

Inventor： Tohru Koyama ,  Takeshi Yoshida

IPC: H01L023/58 ,  H01L023/48 ,  H01L029/40 ,  H01L033/00 ,  H01L021/301 ,  H01L021/46 ,  H01L021/00

CPC classification number: G02B3/00 ,  G01N21/66 ,  H01L29/0657

Abstract: A recessed portion 4 is formed on a main surface 3a of a semiconductor substrate 1 of a semiconductor device 10. A convex portion 5 with a partial spherical surface, functioning as solid immersion lens, is formed on a bottom surface of the recessed portion 4. An angle null1 formed between a side surface 4b of the recessed portion 4 and the main surface 3a of the semiconductor substrate 1 is larger than 90null. This makes it possible to reduce an amount of an analysis light 20 interrupted by the semiconductor substrate 1 when analysis light 20 is used in reverse surface analysis of the semiconductor device 10. Accordingly, the distance between the surface of the convex portion 5 and the side surface 4b of the recessed portion 4 can be reduced, and the time required for machining the semiconductor substrate can be reduced.

Abstract translation: 凹部4形成在半导体装置10的半导体基板1的主表面3a上。作为固体浸没透镜的部分球面的凸部5形成在凹部4的底面上。 在凹部4的侧面4b与半导体基板1的主面3a之间形成的角度θ1大于90°。 这使得当在半导体器件10的反面分析中使用分析光20时，可以减少由半导体衬底1中断的分析光20的量。因此，凸部5的表面与侧面之间的距离 可以减少凹部4的表面4b，并且可以减少加工半导体衬底所需的时间。