公开(公告)号：US20040203257A1

公开(公告)日：2004-10-14

申请号：US10697277

申请日：2003-10-31

Applicant: Renesas Technology Corp.

Inventor： Takeshi Yoshida ,  Tohru Koyama ,  Yoji Mashiko

IPC: H01L021/26 ,  H01L021/00 ,  G02B003/00 ,  H01L031/0232 ,  C03C015/00

CPC classification number: H01L21/268 ,  G02B3/00

Abstract: A processing technique of a semiconductor substrate which can improve a capability of a solid immersion lens in case of processing the semiconductor substrate and forming the solid immersion lens on its surface is provided. A focused ion beam (5) is irradiated on a semiconductor substrate (1), and a salient part (2) acting as a solid immersion lens is formed on its main surface (3a). At this time, a cutting amount of the semiconductor substrate (1) by the focused ion beam (5) is adjusted by making the irradiation time of the focused ion beam (5) to the semiconductor substrate (1) change. According to this, a surface of the salient part (2) has a curved surface of high precision, and a capability of the salient part (2) as the solid immersion lens is improved.

Abstract translation: 提供了半导体衬底的处理技术，其可以在处理半导体衬底并在其表面上形成固体浸没透镜的情况下提高固体浸没透镜的能力。 聚焦离子束（5）照射在半导体衬底（1）上，并且在其主表面（3a）上形成用作固体浸没透镜的突出部分（2）。 此时，通过使聚焦离子束（5）对半导体基板（1）的照射时间发生变化来调整通过聚焦离子束（5）的切割量的半导体基板（1）。 据此，突出部（2）的表面具有高精度的曲面，提高了作为固体浸没透镜的突出部（2）的能力。