ELECTROSTATIC CHUCK AND METHOD OF FORMING
    1.
    发明申请
    ELECTROSTATIC CHUCK AND METHOD OF FORMING 审中-公开
    静电切割和成型方法

    公开(公告)号:WO2009085991A2

    公开(公告)日:2009-07-09

    申请号:PCT/US2008087492

    申请日:2008-12-18

    CPC classification number: H02N13/00

    Abstract: An electrostatic chuck includes an insulating layer, a conductive layer overlying the insulating layer, a dielectric layer overlying the conductive layer, the dielectric layer having pores forming interconnected porosity, and a cured polymer infiltrant residing in the pores of the dielectric layer.

    Abstract translation: 静电卡盘包括绝缘层,覆盖绝缘层的导电层,覆盖导电层的电介质层,具有形成互连孔隙的孔的电介质层和驻留在电介质层的孔中的固化的聚合物渗透剂。

    SEALED PLASMA COATINGS
    2.
    发明申请
    SEALED PLASMA COATINGS 审中-公开
    密封等离子体涂料

    公开(公告)号:WO2010147856A3

    公开(公告)日:2011-02-24

    申请号:PCT/US2010038342

    申请日:2010-06-11

    Abstract: A processing device includes a plurality of walls defining an interior space configured to be exposed to plasma and a surface coating on the interior surface of at least one of the plurality of walls. The surface coating includes pores forming interconnected porosity. The processing device further includes a sealant residing in at least a portion of the pores of the surface coating. In an embodiment, the sealant can be a thermally cured sealant having a cure temperature not greater than about 100C. In another embodiment, the sealant can be an epoxy sealant having a viscosity of not greater than 500 cP in liquid precursor form. In yet another embodiment, the sealant can be a low shrinkage sealant characterized by a solidification shrinkage of not greater than 8%.

    Abstract translation: 处理装置包括限定被配置为暴露于等离子体的内部空间的多个壁和多个壁中的至少一个的内表面上的表面涂层。 表面涂层包括形成互连孔隙的孔。 处理装置还包括位于表面涂层的孔的至少一部分中的密封剂。 在一个实施方案中,密封剂可以是固化温度不超过约100℃的热固化密封剂。 在另一个实施方案中,密封剂可以是液体前体形式的粘度不大于500cP的环氧密封剂。 在另一个实施方案中,密封剂可以是低收缩密封剂,其特征在于凝固收缩率不大于8%。

    SEALED PLASMA COATINGS
    3.
    发明专利

    公开(公告)号:SG176824A1

    公开(公告)日:2012-01-30

    申请号:SG2011092160

    申请日:2010-06-11

    Abstract: A processing device includes a plurality of walls defining an interior space configured to be exposed to plasma and a surface coating on the interior surface of at least one of the plurality of walls. The surface coating includes pores forming interconnected porosity. The processing device further includes a sealant residing in at least a portion of the pores of the surface coating. In an embodiment, the sealant can be a thermally cured sealant having a cure temperature not greater than about 100C. In another embodiment, the sealant can be an epoxy sealant having a viscosity of not greater than 500 cP in liquid precursor form. In yet another embodiment, the sealant can be a low shrinkage sealant characterized by a solidification shrinkage of not greater than 8%.

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