Abstract:
A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.
Abstract:
A ceramic composite and method of making are provided. The ceramic composite may be transparent and may serve as transparent armor. The ceramic portion of the composite may be single crystal sapphire. The composite may provide adequate protection from projectiles while exhibiting large surface areas and relatively low areal densities.
Abstract:
Abstract A ceramic composite and method of making are provided. The ceramic composite is transparent and serves as transparent armor. The composite provides adequate protection from projectiles while exhibiting large surface areas and relatively low areal densities.
Abstract:
A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.
Abstract:
A ceramic composite and method of making are provided. The ceramic composite may be transparent and may serve as transparent armor. The ceramic portion of the composite may be single crystal sapphire. The composite may provide 5 adequate protectionn from projectiles while exhibiting large surface areas and relatively low area densities.
Abstract:
A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.
Abstract:
Se describe un método y aparato para la producción de zafiro de cristal simple de plano C; el método y aparato pueden usar técnicas de crecimiento de capa alimentada de borde definido para la producción de material de cristal simple que exhibe baja policristalinidad y/o baja densidad de dislocación.
Abstract:
A method and apparatus for the production of C-plane single crystal sapph ire is disclosed. The method and apparatus may use edge defined film-fed gro wth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.