公开(公告)号：WO2009067641A3

公开(公告)日：2009-07-09

申请号：PCT/US2008084277

申请日：2008-11-21

Applicant: SAINT GOBAIN CERAMICS ,  MACK III GUILFORD L ,  JONES CHRISTOPHER D ,  PRANADI FERY ,  LOCHER JOHN W ,  ZANELLA STEVEN A ,  BATES HERBERT E

Inventor： MACK III GUILFORD L ,  JONES CHRISTOPHER D ,  PRANADI FERY ,  LOCHER JOHN W ,  ZANELLA STEVEN A ,  BATES HERBERT E

IPC: H01L21/86 ,  C30B15/14 ,  C30B15/20 ,  C30B29/20 ,  H05B6/36

CPC classification number: C30B15/203 ,  C30B15/28 ,  C30B15/34 ,  C30B29/20 ,  C30B29/22

Abstract: A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.

Abstract translation: 公开了生产r-平面单晶蓝宝石的方法和设备。 该方法和设备可以使用边缘限定的膜馈送生长技术来生产展现不存在谱系的单晶材料。

公开(公告)号：AU2007299677A1

公开(公告)日：2008-03-27

申请号：AU2007299677

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS

Inventor： PRANADI FERY ,  ZANELLA STEVEN A ,  LOCHER JOHN W ,  JONES CHRISTOPHER D ,  TATARTCHENKO VITALI

IPC: C30B15/34 ,  C30B29/20

Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

公开(公告)号：AU2007299677B2

公开(公告)日：2011-05-12

申请号：AU2007299677

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS & PLASTICS INC

Inventor： PRANADI FERY ,  ZANELLA STEVEN A ,  LOCHER JOHN W ,  JONES CHRISTOPHER D ,  TATARTCHENKO VITALI

IPC: C30B15/34 ,  C30B29/20

Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

公开(公告)号：UA96952C2

公开(公告)日：2011-12-26

申请号：UAA200902529

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS

Inventor： TATARTCHENKO VITALI ,  JONES CHRISTOPHER D ,  ZANELLA STEVEN A ,  LOCHER JOHN W ,  PRANADI FERY

IPC: C30B15/34 ,  C30B29/20

Abstract: Предложенспособи устройстводляизготовлениямонокристалласапфира, ориентированногов С-плоскости. Такойспособи устройствомогутиспользоватьметодикувыращиванияпрофильногокристаллас ограничениемкраяи подпиткойрасплавадляполучениямонокристаллическогоматериала, которыйдемонстрируетнизкуюполикристалличностьи/илинизкуюплотностьдислокационныхдефектов.

公开(公告)号：CA2663382C

公开(公告)日：2012-04-24

申请号：CA2663382

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS

Inventor： TATARTCHENKO VITALI ,  JONES CHRISTOPHER D ,  ZANELLA STEVEN A ,  LOCHER JOHN W ,  PRANADI FERY

IPC: C30B15/34 ,  C30B29/20

Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

公开(公告)号：MX2009003120A

公开(公告)日：2009-04-06

申请号：MX2009003120

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS

Inventor： JONES CHRISTOPHER D ,  LOCHER JOHN W ,  TATARTCHENKO VITALI ,  ZANELLA STEVEN A ,  PRANADI FERY

IPC: C30B15/34 ,  C30B29/20

Abstract: Se describe un método y aparato para la producción de zafiro de cristal simple de plano C; el método y aparato pueden usar técnicas de crecimiento de capa alimentada de borde definido para la producción de material de cristal simple que exhibe baja policristalinidad y/o baja densidad de dislocación.

公开(公告)号：CA2663382A1

公开(公告)日：2008-03-27

申请号：CA2663382

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS

Inventor： PRANADI FERY ,  TATARTCHENKO VITALI ,  ZANELLA STEVEN A ,  LOCHER JOHN W ,  JONES CHRISTOPHER D

IPC: C30B15/34 ,  C30B29/20

Abstract: A method and apparatus for the production of C-plane single crystal sapph ire is disclosed. The method and apparatus may use edge defined film-fed gro wth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.