公开(公告)号：AU2007299677B2

公开(公告)日：2011-05-12

申请号：AU2007299677

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS & PLASTICS INC

Inventor： PRANADI FERY ,  ZANELLA STEVEN A ,  LOCHER JOHN W ,  JONES CHRISTOPHER D ,  TATARTCHENKO VITALI

IPC: C30B15/34 ,  C30B29/20

Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

公开(公告)号：AU2007299677A1

公开(公告)日：2008-03-27

申请号：AU2007299677

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS

Inventor： PRANADI FERY ,  ZANELLA STEVEN A ,  LOCHER JOHN W ,  JONES CHRISTOPHER D ,  TATARTCHENKO VITALI

IPC: C30B15/34 ,  C30B29/20

Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

公开(公告)号：UA96952C2

公开(公告)日：2011-12-26

申请号：UAA200902529

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS

Inventor： TATARTCHENKO VITALI ,  JONES CHRISTOPHER D ,  ZANELLA STEVEN A ,  LOCHER JOHN W ,  PRANADI FERY

IPC: C30B15/34 ,  C30B29/20

Abstract: Предложенспособи устройстводляизготовлениямонокристалласапфира, ориентированногов С-плоскости. Такойспособи устройствомогутиспользоватьметодикувыращиванияпрофильногокристаллас ограничениемкраяи подпиткойрасплавадляполучениямонокристаллическогоматериала, которыйдемонстрируетнизкуюполикристалличностьи/илинизкуюплотностьдислокационныхдефектов.

公开(公告)号：CA2663382C

公开(公告)日：2012-04-24

申请号：CA2663382

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS

Inventor： TATARTCHENKO VITALI ,  JONES CHRISTOPHER D ,  ZANELLA STEVEN A ,  LOCHER JOHN W ,  PRANADI FERY

IPC: C30B15/34 ,  C30B29/20

Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

公开(公告)号：MX2009003120A

公开(公告)日：2009-04-06

申请号：MX2009003120

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS

Inventor： JONES CHRISTOPHER D ,  LOCHER JOHN W ,  TATARTCHENKO VITALI ,  ZANELLA STEVEN A ,  PRANADI FERY

IPC: C30B15/34 ,  C30B29/20

Abstract: Se describe un método y aparato para la producción de zafiro de cristal simple de plano C; el método y aparato pueden usar técnicas de crecimiento de capa alimentada de borde definido para la producción de material de cristal simple que exhibe baja policristalinidad y/o baja densidad de dislocación.

公开(公告)号：CA2663382A1

公开(公告)日：2008-03-27

申请号：CA2663382

申请日：2007-09-21

Applicant: SAINT GOBAIN CERAMICS

Inventor： PRANADI FERY ,  TATARTCHENKO VITALI ,  ZANELLA STEVEN A ,  LOCHER JOHN W ,  JONES CHRISTOPHER D

IPC: C30B15/34 ,  C30B29/20

Abstract: A method and apparatus for the production of C-plane single crystal sapph ire is disclosed. The method and apparatus may use edge defined film-fed gro wth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.