公开(公告)号：JPH10300705A

公开(公告)日：1998-11-13

申请号：JP1963198

申请日：1998-01-30

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： MASTROMATTEO UBALDO ,  VIGNA BENEDETTO

IPC: B81B1/00 ,  B81C1/00 ,  G01N27/12

Abstract: PROBLEM TO BE SOLVED: To manufacture a semiconductor integrated device having a chemical- resistant gas microsensor. SOLUTION: After the semiconductor main body of a semiconductor integrated device is formed, a metallic coupling area 14b for sensor and a metallic sacrificial area 14a are simultaneously formed at the same level on the semiconductor main body by laminating the areas 14b and 14a upon another and heater elements 21 which are electrically and physically separated from the sacrificial area 14a are formed. Then a gas-sensitive element 25 which is electrically and physically separated from the heater elements 21 is formed. In addition, openings 16 and 29 are formed to the sacrificial area 14a in the lateral direction against the heater elements 21 and gas-sensitive element 25 and the sacrificial area 14a is removed through the openings 16 and 28 in the final step of the manufacturing process of the semiconductor integrated device.

公开(公告)号：JPH10132846A

公开(公告)日：1998-05-22

申请号：JP24424097

申请日：1997-09-09

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MASTROMATTEO UBALDO

IPC: G01P15/125 ,  B81B3/00 ,  B81C1/00 ,  G01P15/11 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To obtain an acceleration sensor which is formed on a board by using a planar technology. SOLUTION: A core 11 of ferromagnetic material, a first winding 13 to be connected with a power supply 14 electromagnetically coupled by using the core, and a second winding 15 to be connected with a circuit means 16 for measuring the quantity of induced electricity are arranged on a board 10. The core 11 has at least one suspension part which is freely bent with the inertial force due to accelerated movement of the sensor.

公开(公告)号：DE69410251T2

公开(公告)日：1998-10-01

申请号：DE69410251

申请日：1994-06-20

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： DIAZZI CLAUDIO ,  MURARI BRUNO ,  MASTROMATTEO UBALDO ,  CONTIERO CLAUDIO

IPC: H01L21/76 ,  H01L21/822 ,  H01L23/31 ,  H01L23/58 ,  H01L27/04

公开(公告)号：IT1276176B1

公开(公告)日：1997-10-27

申请号：ITMI952503

申请日：1995-11-30

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： MASTROMATTEO UBALDO

IPC: G21B3/00 ,  G21D9/00

Abstract: An apparatus for the generation of thermal energy includes: a) a first quantity in solid form of a first material suitable to absorb hydrogen with ensuing generation of thermal energy; b) a second quantity in solid form of a second material suitable to release hydrogen at a temperature higher than a prefixed temperature, at least partly in contact with said first quantity; and c) a third quantity in solid form of a third material, suitable for the generation of thermal energy when it is submitted to the passage of electric current, so located as to be thermally coupled with said second quantity.

公开(公告)号：AU7709796A

公开(公告)日：1997-06-19

申请号：AU7709796

申请日：1996-11-26

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： MASTROMATTEO UBALDO

IPC: G21B3/00 ,  G21D9/00 ,  H01L35/28 ,  G21B1/00

公开(公告)号：ITMI952502A1

公开(公告)日：1997-05-30

申请号：ITMI952502

申请日：1995-11-30

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： MASTROMATTEO UBALDO

IPC: G21B3/00 ,  G21D9/00 ,  H01L35/28

公开(公告)号：BR9611784A

公开(公告)日：1999-12-28

申请号：BR9611784

申请日：1996-11-26

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： MASTROMATTEO UBALDO

IPC: G21B3/00 ,  G21D9/00 ,  H01L35/28 ,  G21B1/00

公开(公告)号：IT1276998B1

公开(公告)日：1997-11-04

申请号：ITMI952502

申请日：1995-11-30

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： MASTROMATTEO UBALDO

IPC: G21B3/00 ,  G21D9/00 ,  H01L35/28

公开(公告)号：AU7709596A

公开(公告)日：1997-06-19

申请号：AU7709596

申请日：1996-11-26

Applicant: SGS THOMSON MICROELECTRONICS S R L

Inventor： MASTROMATTEO UBALDO

IPC: G21B3/00 ,  G21D9/00 ,  G21B1/00

Abstract: An apparatus for the generation of thermal energy includes: a) a first quantity in solid form of a first material suitable to absorb hydrogen with ensuing generation of thermal energy; b) a second quantity in solid form of a second material suitable to release hydrogen at a temperature higher than a prefixed temperature, at least partly in contact with said first quantity; and c) a third quantity in solid form of a third material, suitable for the generation of thermal energy when it is submitted to the passage of electric current, so located as to be thermally coupled with said second quantity.

公开(公告)号：ITMI952503A1

公开(公告)日：1997-05-30

申请号：ITMI952503

申请日：1995-11-30

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： MASTROMATTEO UBALDO

IPC: G21B3/00 ,  G21D9/00

Abstract: An apparatus for the generation of thermal energy includes: a) a first quantity in solid form of a first material suitable to absorb hydrogen with ensuing generation of thermal energy; b) a second quantity in solid form of a second material suitable to release hydrogen at a temperature higher than a prefixed temperature, at least partly in contact with said first quantity; and c) a third quantity in solid form of a third material, suitable for the generation of thermal energy when it is submitted to the passage of electric current, so located as to be thermally coupled with said second quantity.