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公开(公告)号:DE69025278D1
公开(公告)日:1996-03-21
申请号:DE69025278
申请日:1990-11-22
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: PALARA SERGIO , TAGLIAVIA DONATO
Abstract: The detection circuit of the current in an MOS type power transistor comprises a detection transistor (T2) connected with drain and gate in common to the power transistor (T1) and having characteristics such that the current (I2) flowing through it is equal to a fraction of the current (I1) flowing through power transistor (T1). Downstream from detection transistor (T2) there are arranged means (T6; T13) for comparing a first current (I3) equal to a fraction of the current (I2) flowing through detection transistor (T2) with a second reference current (Ig1) having a pre-set value and to produce a detection signal of the value of the current in power transistor (T1) in relation to the difference between said first current (I3) and the reference current (Ig1).
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公开(公告)号:DE69025278T2
公开(公告)日:1996-09-19
申请号:DE69025278
申请日:1990-11-22
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: PALARA SERGIO , TAGLIAVIA DONATO
Abstract: The detection circuit of the current in an MOS type power transistor comprises a detection transistor (T2) connected with drain and gate in common to the power transistor (T1) and having characteristics such that the current (I2) flowing through it is equal to a fraction of the current (I1) flowing through power transistor (T1). Downstream from detection transistor (T2) there are arranged means (T6; T13) for comparing a first current (I3) equal to a fraction of the current (I2) flowing through detection transistor (T2) with a second reference current (Ig1) having a pre-set value and to produce a detection signal of the value of the current in power transistor (T1) in relation to the difference between said first current (I3) and the reference current (Ig1).
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