1.
    发明专利
    未知

    公开(公告)号:DE69025278D1

    公开(公告)日:1996-03-21

    申请号:DE69025278

    申请日:1990-11-22

    Abstract: The detection circuit of the current in an MOS type power transistor comprises a detection transistor (T2) connected with drain and gate in common to the power transistor (T1) and having characteristics such that the current (I2) flowing through it is equal to a fraction of the current (I1) flowing through power transistor (T1). Downstream from detection transistor (T2) there are arranged means (T6; T13) for comparing a first current (I3) equal to a fraction of the current (I2) flowing through detection transistor (T2) with a second reference current (Ig1) having a pre-set value and to produce a detection signal of the value of the current in power transistor (T1) in relation to the difference between said first current (I3) and the reference current (Ig1).

    2.
    发明专利
    未知

    公开(公告)号:DE69025278T2

    公开(公告)日:1996-09-19

    申请号:DE69025278

    申请日:1990-11-22

    Abstract: The detection circuit of the current in an MOS type power transistor comprises a detection transistor (T2) connected with drain and gate in common to the power transistor (T1) and having characteristics such that the current (I2) flowing through it is equal to a fraction of the current (I1) flowing through power transistor (T1). Downstream from detection transistor (T2) there are arranged means (T6; T13) for comparing a first current (I3) equal to a fraction of the current (I2) flowing through detection transistor (T2) with a second reference current (Ig1) having a pre-set value and to produce a detection signal of the value of the current in power transistor (T1) in relation to the difference between said first current (I3) and the reference current (Ig1).

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