公开(公告)号：DE60322316D1

公开(公告)日：2008-09-04

申请号：DE60322316

申请日：2003-08-26

Applicant: SGS THOMSON MICROELECTRONICS ,  ST MICROELECTRONICS SA

Inventor： RAYNOR JEFF ,  JAFFARD JEAN-LUC

IPC: H01L31/0203 ,  H01L33/00

公开(公告)号：DE60216046D1

公开(公告)日：2006-12-28

申请号：DE60216046

申请日：2002-04-18

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： RAYNOR JEFF

IPC: H01L27/146

Abstract: A solid state image sensor has an array of pixels formed on an epitaxial layer (10) on a substrate (12). The pixel is large, 40-60 mu m, for high light collecting ability, but the pixel photodiode (14') is small, 4-6 mu m, for low capacitance. Active elements of the pixel are formed in wells (16) which are spaced away from the photodiode (14') so that the latter is surrounded by epitaxial material.