公开(公告)号：JPH0621355A

公开(公告)日：1994-01-28

申请号：JP17138092

申请日：1992-06-30

Applicant: SHARP KK

Inventor： KOYAMA JUNICHIRO

IPC: H01L27/06 ,  H01L21/331 ,  H01L29/73 ,  H01L29/732

Abstract: PURPOSE:To obtain a semiconductor device capable of preventing the secondary breakdown without an increase in the number of parts by forming a transistor and a a rush current protective Zener diode on a same semiconductor substrate. CONSTITUTION:An N epi-layer 3 is used for the collector layer of a transistor 1 and the cathode layer of a Zener diode 2 and is connected with a collector electrode 5 through an N substrate 4, and the emitter layer 6 of the transistor 1 and the P anode layer 7 of the Zener diode 2 are connected with an emitter electrode 8. And the N cathode layer 9 is formed in the P anode layer 7 of the Zener diode 2 and also in the periphery, at the junction of which the Zener breakdown is brough about, but the N cathode layer 9 extending on the transistor 1 side acts as a surface N channel stopper since the N epi-layer 3 is inverted at the boundary of the N epi-layer 3 with SiO2 10. Therefore, when an L-load is applied, the secondary failure at the ON-OFF period of time may be prevented without an increase in the number of parts.

公开(公告)号：JPH0422171A

公开(公告)日：1992-01-27

申请号：JP12816790

申请日：1990-05-17

Applicant: SHARP KK

Inventor： KOYAMA JUNICHIRO

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/167 ,  H01L29/732

Abstract: PURPOSE:To easily diffuse a heavy metal at a low temperature and in a short time, to reduce the amount of the heavy metal and to easily control a lifetime by a method wherein, after the heavy metal has been diffused to a P-type region, it is then diffused to an adjacent N-type region. CONSTITUTION:A P-type base region 2 and N-type emitter regions 3 are formed on the surface of an N-type semiconductor substrate 1; an SiO2 film 4 is formed on the surface. Then, the SiO2 film 4 at the upper part of the regions 3 and windows 10, 10 for lifetime-killer diffusion use is removed; a heavy-metal film 5 of, e.g. Au, Pt or the like is applied to the surface by a vapor-deposition operation. Then, when a heat treatment is executed, e.g. at 800 to 900 deg.C for about one hour, a heavy metals diffused directly to the region 2 mainly from the windows 10. After that, the film 5 on the surface is removed by using aqua regia; a film 4 with which the surface of the regions 3 and the windows 10 is covered is formed; and a base electrode 6, an emitter electrode 7 and a collector electrode 8 are formed respectively in required parts. Thereby, a diffusion operation can be executed at a temperature which is by about 100 deg.C or lower as compared with conventional systems, the amount of a lifetime killer is reduced to about 1/4 as compared with the conventional systems and the lifetime can easily be controlled.

公开(公告)号：JPH03248535A

公开(公告)日：1991-11-06

申请号：JP4880990

申请日：1990-02-27

Applicant: SHARP KK

Inventor： NAKAYAMA YASUHIRO ,  KOYAMA JUNICHIRO

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/732

Abstract: PURPOSE:To obtain a power transistor which can control a large current without increasing the area of a chip by forming the depth of a base layer of a region not formed with an emitter layer shallower than that of the base layer of a region formed with the emitter layer. CONSTITUTION:Since a base layer 5a of a region not formed with an emitter layer 3 is formed shallower than a base layer 5b of other part, the resistance of the layer 5a disposed to the layer 3 is raised. Thus, it becomes the same state as the state in which a ballast resistor is inserted between a base.emitter junction and a base electrode 2, and a current is not concentrated at a specific unit transistor. It is not necessary to provide a diffused layer for the resistor in the layer 5a to the layer 3 separately from the layer 5a. Thus, it is not necessary particularly to provide a diffused layer for the resistor, and a large current bipolar transistor element having a multiemitter structure in which a current is not concentrated at the specific emitter layer can be obtained.

公开(公告)号：JPH02228040A

公开(公告)日：1990-09-11

申请号：JP4944989

申请日：1989-02-28

Applicant: SHARP KK

Inventor： KOYAMA JUNICHIRO

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/732

Abstract: PURPOSE:To prevent a current from being concentrated on a specific unit transistor by causing a base current applied by a base electrode to flow into an emitter region through a diffusion resisting part having a resistance component and making the resistance component act as a ballast resistance. CONSTITUTION:A base region 1 is formed at one side face of a collector region 3 and a base electrode 4 is provided at one side part of the base region 1. Then an emitter region 2 is formed at the other side part of the base region 1 and a junction part is formed between the base electrode 4 and the emitter region 2. Then a diffusion resisting part 10 where impurities supplying the same conductivity type as that of the base region 1 are diffused is provided. Further, the resistance value of a ballast resistance is established by operating the pattern of the diffusion resisting part 10. Then its value is also established for each unit transistor. Concentration of a current upon a specific unit transistor is thus prevented.

公开(公告)号：JPS62291172A

公开(公告)日：1987-12-17

申请号：JP13549086

申请日：1986-06-11

Applicant: SHARP KK

Inventor： KOYAMA JUNICHIRO

IPC: H01L29/74

Abstract: PURPOSE:To reduce a photodetecting area of a large power photothyristor even if an optical firing sensitivity is high and a breakdown strength is high by generating a gate current due to an avalanche breakdown of a junction between a third N-type semiconductor and a first P-type semiconductor layer in a reverse bias state by emitting a light to the third N-type semiconductor. CONSTITUTION:When a positive voltage is applied to an anode electrode 6, a negative voltage is applied to a cathode electrode 5 and a photothyristor is in a forward voltage blocking state, a light 12 of relatively small quantity is emitted to a gate, i.e., an N-type semiconductor 7, such as by a light emitting diode. Then, carrier is generated, and accelerated by an electric field to collide with a crystal lattice to generate new carrier. This step is repeated to cause a coupler 8 to avalanche-break down. A large gate current generated in this manner is implanted to a P-type semiconductor layer 3 to flow across the junction 13 between an N-type semiconductor layer 1 and the layer 3 of forward junction state. Accordingly, the photothyristor is fired. Thus, even if the photodetecting area is reduced, the optical firing sensitivity is increased to enhance the breakdown strength.

公开(公告)号：JP2000012873A

公开(公告)日：2000-01-14

申请号：JP16989598

申请日：1998-06-17

Applicant: SHARP KK

Inventor： KOYAMA JUNICHIRO ,  KUBO MASARU ,  YAMAGUCHI AKISHI

IPC: G01B11/00 ,  H01L31/00 ,  H01L31/10 ,  H01L31/12

Abstract: PROBLEM TO BE SOLVED: To provide a phototransistor, which is sensitive only to the light of specific wavelengths without using a filter and capable of coping with reduction in size and cost and a specific object detection device, and a method thereof. SOLUTION: A second layer 7 formed on the surface of the anode layer 6 of a phototransistor, which serves as a photodetecting part, is short-circuited to the anode layer 6 with a short-circuit electrode 11, whereby the phototrasistor is lessened in sensitivity to the light of a short wavelength. A specific object detecting device is equipped with the phototransistor and a light-emitting device, where a wavelength λB of the peak sensitivity light of the phototransistor is set longer than a wavelength λA of the peak emission light of the light-emitting device. The light of short wavelengths emitted from the light-emitting device of the specific object detecting device is absorbed by a detected object, the light of long wavelengths discharged from the detected object S on the basis of the energy of absorbed light is detected by the phototransistor, whereby a specific object is detected by a specific object detecting device.

公开(公告)号：JPH06209006A

公开(公告)日：1994-07-26

申请号：JP266493

申请日：1993-01-11

Applicant: SHARP KK

Inventor： KOYAMA JUNICHIRO

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/732

Abstract: PURPOSE:To realize flat characteristics of base current dependency of current amplification factor by making an impurity concentration of an emitter layer lower than an impurity concentration of a P-type high concentration layer formed in a peripheral part of an emitter layer and by forming an N-type high concentration layer whose impurity concentration is higher than that in the peripheral part of the emitter layer. CONSTITUTION:An emitter layer 5 is formed in a base layer 4, and a P-type high concentration layer 8 is formed in a peripheral part of the emitter layer 5. An impurity surface concentration of the base layer 4 is made about 10 cm , an impurity surface concentration of the emitter layer 5 is made about 10 cm , and an impurity surface concentration of the P-type high concentration layer 8 is made about 10 cm . Since an impurity concentration is lower in the emitter layer 5 than in the P-type high concentration layer 8, an overlapping part 5-1 of the emitter layer 5 and the P-type high concentration layer 8 is a P-type layer. Furthermore, an N-type high concentration layer 6 is formed in a surface of a central part of the emitter layer 5. A surface concentration of the N-type high concentration layer 6 is about 10 cm .

公开(公告)号：JP2001313414A

公开(公告)日：2001-11-09

申请号：JP2000131751

申请日：2000-04-28

Applicant: SHARP KK

Inventor： KAMIUCHI HAJIME ,  KUBO MASARU ,  KOYAMA JUNICHIRO

IPC: H01L27/14 ,  H01L31/10 ,  H01L31/12

Abstract: PROBLEM TO BE SOLVED: To provide a photodiode array which is small and which can be manufactured at a low cost. SOLUTION: In the photodiode array, a polysilicon layer 20 is laminated on a silicon substrate 10. Inside the polysilicon layer 20, a plurality of photodiodes which are mutually separated by an SiO2 film 30 and in which p-type active layers and n-type active layers are arranged side by side, in a state where the laminated layers are connected in series by Al electrode interconnections 70. The p-type active layers, which constitute light receiving parts of the respective photodiodes, are formed of p-type SiGe layers 50.

公开(公告)号：JP2000036614A

公开(公告)日：2000-02-02

申请号：JP20351098

申请日：1998-07-17

Applicant: SHARP KK

Inventor： NAKAJIMA SOJI ,  KOYAMA JUNICHIRO

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a photo-transistor chip for effectively shortening a switching time. SOLUTION: A Schottky barrier diode 17 is provided which electrically connects base layers 3 and 7 to a collector layer 13. A region where an emitter layer 4 is formed is positioned deviated in one direction on the surface of the base layer. A region 6 where the Schottky barrier diode 17 is formed is nearer to the emitter layer 4 than to the central part of the base layers 3 and 7, relative to that one direction.

公开(公告)号：JPH09213986A

公开(公告)日：1997-08-15

申请号：JP1505496

申请日：1996-01-31

Applicant: SHARP KK

Inventor： KOYAMA JUNICHIRO

IPC: H01L31/10 ,  H01L21/8222 ,  H01L27/082 ,  H03F3/08 ,  H03K17/615 ,  H03K17/78

Abstract: PROBLEM TO BE SOLVED: To realize a photosensor element, esp., such element having a Darlington transistor type structure which has a high power, high collector-emitter breakdown voltage providing a high withstanding voltage, and low base-emitter resistance providing a low internal resistance. SOLUTION: This photosensor element has a photoelectric converter 4 and Darlington-connected transistors 1 and 2 at a first and output stages to amplify a photo current provided by the converter 4. The output stage transistor 2 of the Darlington connection has a higher amplification factor than the first stage one 1 and dark current limiting resistor 4 is inserted between the base and emitter of that transistor 2.