公开(公告)号：JP2000068549A

公开(公告)日：2000-03-03

申请号：JP23986798

申请日：1998-08-26

Applicant: SHARP KK

Inventor： NAKAJIMA SOJI ,  YOSHIKAWA TOSHIBUMI ,  YASUDA YOSHIKI

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a photodiode capable of improving, e.g. the CMR characteristics in the case of mounting a photocoupler by encircling almost the whole periphery near a base electrode with metallic layers in an emitter potential. SOLUTION: A phototransistor forming a Schottky barrier diode between the base and collector by the contact of the exposed region 11 with the base electrode 6 on a semiconductor substrate 1 composing a collector layer exposed to the surface is surrounded by the metallic layers 7, 8, 9 in an emitter potential almost at the whole periphery of the base electrode 6.

公开(公告)号：JP2003209151A

公开(公告)日：2003-07-25

申请号：JP2002006193

申请日：2002-01-15

Applicant: SHARP KK

Inventor： NAKAJIMA SOJI ,  MARIYAMA MITSURU

IPC: H01L21/66

Abstract: PROBLEM TO BE SOLVED: To measure the potential distribution of a semi-insulating film on a real device of a semiconductor device in a method for measuring the potential distribution of the semi-insulating film. SOLUTION: A first electrode and a second electrode are formed at arbitrary positions of a semi-insulating film formed on a semiconductor substrate away by a predetermined distance or more, and at least one or more measuring electrodes are disposed at predetermined positions on the semi-insulating film between the first electrode and the second electrode. When a predetermined DC voltage is applied between the first electrode and the second electrode, the measuring potential of the measuring electrode is detected, thereby acquiring the potential distribution of the semi-insulating film. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2000036614A

公开(公告)日：2000-02-02

申请号：JP20351098

申请日：1998-07-17

Applicant: SHARP KK

Inventor： NAKAJIMA SOJI ,  KOYAMA JUNICHIRO

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a photo-transistor chip for effectively shortening a switching time. SOLUTION: A Schottky barrier diode 17 is provided which electrically connects base layers 3 and 7 to a collector layer 13. A region where an emitter layer 4 is formed is positioned deviated in one direction on the surface of the base layer. A region 6 where the Schottky barrier diode 17 is formed is nearer to the emitter layer 4 than to the central part of the base layers 3 and 7, relative to that one direction.

公开(公告)号：JP2002184971A

公开(公告)日：2002-06-28

申请号：JP2000376602

申请日：2000-12-11

Applicant: SHARP KK

Inventor： NAKAJIMA SOJI ,  MARIYAMA MITSURU

IPC: H01L27/14 ,  H01L21/06 ,  H01L21/822 ,  H01L27/04 ,  H01L27/06 ,  H01L29/74 ,  H01L31/10

Abstract: PROBLEM TO BE SOLVED: To obtain a planar photothyristor chip of such a passivation structure as an oxygen doped semi-insulating polysilicon film is deposited on a silicon oxide film in which the oxygen doped semi-insulating polysilicon film is prevented from being divided by overetching. SOLUTION: A second silicon oxide film 54 is formed on an oxygen doped semi-insulating polysilicon film 39 deposited on a silicon oxide film 51. At the contact part 30 of the oxygen doped semi-insulating polysilicon film 39 and an electrode 42, the silicon oxide film 54 is removed selectively by wet etching. At the time of plasma etching a silicon nitride film 53 formed on the silicon oxide film 54, the silicon oxide film 54 is protected by the silicon oxide film 54.

公开(公告)号：JP2001036070A

公开(公告)日：2001-02-09

申请号：JP20392999

申请日：1999-07-16

Applicant: SHARP KK

Inventor： MARIYAMA MITSURU ,  NAKAJIMA SOJI

IPC: H01L29/747 ,  H01L29/74 ,  H01L31/111

Abstract: PROBLEM TO BE SOLVED: To prevent zero-cross operation failures by a parasitic capacitance of a semi-insulating film to operate stably an AC voltage in a photo-thyristor element incorporated with a MOSFET for obtaining a zero-cross function, comprising a photodiode or a phototransistor for photodriving a gate of the MOSFET, and having a high breakdown voltage passivation film provided with an oxygen dope semi-insulating film on an insulation film. SOLUTION: A semi-insulating film 13 is patterned so as not to enter parasitic resistance by a semi-insulation film 13 between a gate and a source of a MOSFET 14, and between the gate of the MOSFET 14 and a cathode of a thyrister 30. Furthermore, since a punch-through voltage is stabilized, regions (a part of distance Lp) above the base and a collector junction j2 of a photoresistor 21 and above a junction j1 of a P-type diffused region adjacent so as to enclose therewith, and regions between them are coated with the semi- insulating film 13 or a metal layer 20 of an Al wiring, etc., for shielding.

公开(公告)号：JPH1146009A

公开(公告)日：1999-02-16

申请号：JP19958297

申请日：1997-07-25

Applicant: SHARP KK

Inventor： NAKAJIMA SOJI

IPC: H01L31/10 ,  H01L23/00

Abstract: PROBLEM TO BE SOLVED: To improve an electrostatic withstand voltage without increasing the size of a light-receiving element by forming a transistor, which short-circuits an emitter and a base to an anode electrode on an anode layer formed by scattering the impurities of semiconductor substrate. SOLUTION: A light-receiving portion 13 on the upper surface of a light- receiving element 10 is formed by making a P-type anode layer 15 by scattering a constant amount of P-type impurities on an N-type semiconductor substrate 14 constituted with an N-type silicon semiconductor and then by covering the upper surface with a transparent oxide film 16 of SiO2 . Anode electrode 11 is directly contacted to a P-type anode layer 15. Anode electrode 11 comprises an anode electrode main body 11a, a guard ring 11b, and a transistor electrode portion 11c. Underneath the transistor electrode portion 11c, an NPN type transistor with the emitter and base short-circuited is formed. This transistor has its base on a P-type anode layer 15 near the cathode electrode 12.

公开(公告)号：JP2002190613A

公开(公告)日：2002-07-05

申请号：JP2000390259

申请日：2000-12-22

Applicant: SHARP KK

Inventor： MARIYAMA MITSURU ,  NAKAJIMA SOJI

IPC: H01L27/14 ,  H01L29/74 ,  H01L29/747 ,  H01L31/10 ,  H01L31/111

Abstract: PROBLEM TO BE SOLVED: To increase the breakdown voltage of an element, while sensitivity of the element is increased and the area of the element is maintained small. SOLUTION: This high breakdown voltage planar light-receiving element is provided with a P-type diffusion region 3, formed on the main surface of an N-type silicon substrate 1, an anode electrode 5 having an end portion, which does not reach a part above a P-N junction for regulating the P-type diffusion region 3, and a transmissive low resistivity part 11 which is formed in the vicinity of the part above the P-N junction via a silicon oxide film 4. An overlay length L1 from the P-N junction to the end portion of the low resistivity part 11 is at least 10 μm and at most 100 μm. This bidirectional photothyristor element has the above high breakdown voltage planar structure.

公开(公告)号：JP2001339093A

公开(公告)日：2001-12-07

申请号：JP2000157419

申请日：2000-05-26

Applicant: SHARP KK

Inventor： NAKAJIMA SOJI ,  KUBO MASARU

IPC: H01L31/10 ,  H01L31/12

Abstract: PROBLEM TO BE SOLVED: To enable to set impurity concentration in a base to be high while maintaining a high DC current amplification factor. SOLUTION: In this phototransistor 100, a resistor 11 is incorporated between the base 13 and an emitter 14. The base layer 13 is constituted of an Si1-XGeX (x>0) layer.