公开(公告)号：DE69027290D1

公开(公告)日：1996-07-11

申请号：DE69027290

申请日：1990-12-24

Applicant: SHARP KK

Inventor： HASHIMOTO RYUJI ,  MIZUSHIMA SHIGEAKI ,  NISHIMURA EIICHIRO ,  MINEZAKI SHIGEHIRO ,  TAKEMOTO TOSHIO

IPC: G02F1/133 ,  G09G3/36

Abstract: In a driving circuit for a liquid crystal apparatus, a DC offset voltage the level of which changes depending upon the level of input video signals is applied input video signal. The DC voltage which appears in the liquid crystal and the level of which changes depending upon the level of input video signals can be completely compensated.

公开(公告)号：DE69027290T2

公开(公告)日：1996-11-28

申请号：DE69027290

申请日：1990-12-24

Applicant: SHARP KK

Inventor： HASHIMOTO RYUJI ,  MIZUSHIMA SHIGEAKI ,  NISHIMURA EIICHIRO ,  MINEZAKI SHIGEHIRO ,  TAKEMOTO TOSHIO

IPC: G02F1/133 ,  G09G3/36

Abstract: In a driving circuit for a liquid crystal apparatus, a DC offset voltage the level of which changes depending upon the level of input video signals is applied input video signal. The DC voltage which appears in the liquid crystal and the level of which changes depending upon the level of input video signals can be completely compensated.

公开(公告)号：DE68917774T2

公开(公告)日：1995-03-16

申请号：DE68917774

申请日：1989-04-28

Applicant: SHARP KK

Inventor： SHOJI HAJIME ,  WATANABE NORIKO ,  HAMADA HIROSHI ,  KATO HIROAKI ,  TAKEMOTO TOSHIO ,  HIROBE TOSHIHIKO

IPC: G02F1/1335 ,  G02F1/1368 ,  H01L29/786 ,  G02F1/136

Abstract: The invention relates to a thin film semiconductor device and a liquid crystal display apparatus. In the thin film semiconductor device, because light irradiated to the thin film semiconductor device is cut off by a conductor layer, the light can be prevented from reaching the semiconductor layer. Therefore generation of carriers due to optical excitation does not occur and off current can be reduced. In the thin film semiconductor device, because there is no area where electric field intensity of an opposed direction of the source electrode and the drain electrode is weaker than that in the channel region in the semiconductor layer, even after an operation for a prolonged duration under the irradiation of light, carriers generated by optical excitation are not accumulated in the semiconductor layer, and probability of the trapping for the carriers into a gate insulating film is quite low, and therefore variation in the characteristics of the thin film semiconductor device is negligibly small. The liquid crystal display apparatus using the thin film semiconductor can restrict such deterioration of display quality as the degradation of contrast and uniformity.

公开(公告)号：DE68917774D1

公开(公告)日：1994-10-06

申请号：DE68917774

申请日：1989-04-28

Applicant: SHARP KK

Inventor： SHOJI HAJIME ,  WATANABE NORIKO ,  HAMADA HIROSHI ,  KATO HIROAKI ,  TAKEMOTO TOSHIO ,  HIROBE TOSHIHIKO

IPC: G02F1/1335 ,  G02F1/1368 ,  H01L29/786 ,  G02F1/136

Abstract: The invention relates to a thin film semiconductor device and a liquid crystal display apparatus. In the thin film semiconductor device, because light irradiated to the thin film semiconductor device is cut off by a conductor layer, the light can be prevented from reaching the semiconductor layer. Therefore generation of carriers due to optical excitation does not occur and off current can be reduced. In the thin film semiconductor device, because there is no area where electric field intensity of an opposed direction of the source electrode and the drain electrode is weaker than that in the channel region in the semiconductor layer, even after an operation for a prolonged duration under the irradiation of light, carriers generated by optical excitation are not accumulated in the semiconductor layer, and probability of the trapping for the carriers into a gate insulating film is quite low, and therefore variation in the characteristics of the thin film semiconductor device is negligibly small. The liquid crystal display apparatus using the thin film semiconductor can restrict such deterioration of display quality as the degradation of contrast and uniformity.

公开(公告)号：JPH0220830A

公开(公告)日：1990-01-24

申请号：JP17109588

申请日：1988-07-08

Applicant: SHARP KK

Inventor： KANBE TAKASHI ,  TAKEMOTO TOSHIO ,  HISHIDA TADANORI ,  NAGATOMI HISATO

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To lower the disconnection rate in the crossed parts of gate wirings and source wirings by increasing the contact length of n/i layers of the parts where the source wirings and drain wirings intersect, thereby substantially preventing the infiltration of an etching liquid into the gate wirings. CONSTITUTION:The pattern shape of the crossed parts of the gate wiring and the source wirings is provided with ruggedness along the source wires 7 to both of an n -amorphous silicon film 6 and an amorphous silicon film 4, i.e. n/i layers 4, 6. Even if, therefore, the etching liquid penetrates into the central part of the source wires along an arrow A, the infiltration route thereof increases. Even if these parts are wetted with the etching liquid for the same time as the etching time in the conventional production process, the infiltration of the etching liquid down to the central parts of the source lines is obviated as the infiltration path of the etching liquid is longer. The disconnection rate in the crossed parts of the gate wirings and the source wiring and the disconnection rate of the source-drain wirings are lowered in this way.

公开(公告)号：JPH03113426A

公开(公告)日：1991-05-14

申请号：JP25255489

申请日：1989-09-28

Applicant: SHARP KK

Inventor： SEKI ATSUO ,  NAGATOMI HISATO ,  MOMOSE HIDEHIKO ,  KASAI HIROYUKI ,  KANBE TAKASHI ,  TAKEMOTO TOSHIO

IPC: G02F1/1343 ,  G02F1/136 ,  G02F1/1368

Abstract: PURPOSE:To reduce the generation rate of a disconnection without deteriorating a numerical aperture of a display screen by providing an electrode for additional capacity opposed through a dielectric layer to a picture element electrode arranged like a matrix on the inside surface of one of a pair of substrates and forming this electrode for additional capacity like a mesh. CONSTITUTION:On a gate insulating film 6 of the side of a TFT 2, a picture element electrode 1 is brought to pattern formation, and the picture element electrode 1 is connected to a drain electrode 16. The end part of the opposite side to the TFT 2 of the picture element electrode 1 is superposed to an electrode 22 for additional capacity through an anodically oxized film 11 and the gate insulating film 6. In such a way, an additional capacity 27 is formed by the end part of the picture element electrode 1 and the electrode 22 for additional capacity. In this case, since the electrode 22 for additional capacity is like a mesh, a leakage electric field exists a great deal in the outside of an area in which the electrode 22 for additional capacity and the picture element electrode 1 are opposed to each other. In such a way, the additional capacity can be increased without causing the deterioration of a numerical aperture, and also, the generation of a disconnection of the electrode for additional capacity is reduced, and a display device having a high image quality is obtained with high yield.

公开(公告)号：JPH0385732A

公开(公告)日：1991-04-10

申请号：JP22407989

申请日：1989-08-29

Applicant: SHARP KK

Inventor： KONDO YOICHI ,  KASAI HIROYUKI ,  SHIROGISHI SHINGO ,  NAKAJIMA MUTSUMI ,  TANIGUCHI HIDEO ,  TAKEMOTO TOSHIO

IPC: G02F1/1333 ,  G02F1/1343 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To eliminate a rise of photoresist near the outer periphery along the periphery of a glass substrate and to enlarge the effective area which can be patterned by forming a recessed groove along the outer periphery of the glass substrate spaced a little distant from the outer periphery on one side. CONSTITUTION:A recessed groove part 11 is provided as a surface tension reduction part with a small interval D from the outer periphery l along the outer periphery l of a surface of a glass substrate 3. The groove part 11 is provided to a glass substrate surface and as for the groove size, a size A of 1.2mm, a size B of 0.5mm and a size C of 0.4mm in the case of a board thickness (t)=1.1mm, for example are selected. A frame-like plane part 3a from the outer peripheral side l to the groove part 11 is formed along the outer periphery l and has a width D of about 0.7mum. When the glass substrate 3 is rotated, the state of surface tension which acts on a photoresist concentrated to the groove part 11 changes and becomes unable to resist the centrifugal force. Thereby, excessive photoresist is shaken off outside through the plane part 3a.

公开(公告)号：JPH0385528A

公开(公告)日：1991-04-10

申请号：JP22339889

申请日：1989-08-30

Applicant: SHARP KK

Inventor： MIZUSHIMA SHIGEMITSU ,  FUJII TOSHIO ,  NISHIMURA EIICHIRO ,  MINEZAKI SHIGEHIRA ,  TAKEMOTO TOSHIO

IPC: G02F1/133 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1347

Abstract: PURPOSE:To prevent the disturbance in the orientation of liquid crystal molecules by electrification and to obtain a good and stable image grade by providing transparent conductive films respectively on a pair of transparent substrates of a 2nd liquid crystal cell and electrically connecting the transparent conductive films to each other. CONSTITUTION:The display device has the liquid crystal cell 1 for display which is the 1st liquid crystal cell and the liquid crystal cell 2 for compensation which is the 2nd liquid crystal cell. The liquid crystal cell 1 for display has a pair of the transparent conductive films 23a, 23b and display electrodes 27a, 27b are provided on the respective inside surfaces of the substrates. The transparent conductive films 29 are provided respectively on a pair of the substrates 22a, 22b which constitute the 2nd liquid crystal cell, namely, the liquid crystal cell 2 for compensation and a pair of these transparent conductive films 29 are formed on either one surface of the respective substrates 22a, 22b and are electrically connected to each other. The electrification on the substrate surfaces of the liquid crystal cell for compensation is substantially obviated in this way and the disturbance in the orientation of liquid crystal molecules in the liquid crystal cell for compensation is prevented.

公开(公告)号：JPH0218524A

公开(公告)日：1990-01-22

申请号：JP16987988

申请日：1988-07-06

Applicant: SHARP KK

Inventor： HISHIDA TADANORI ,  TAKEMOTO TOSHIO ,  KANBE TAKASHI ,  HAMADA HIROSHI

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/283 ,  H01L21/285 ,  H01L21/318 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To eliminate voltage variation of the threshold value of a TFT and to prevent the generation of a defect by short-circuiting a picture element electrode to a 1st electrode line before the formation of a protection film and opening the electrode after the protection film formation. CONSTITUTION:All source electrode lines 7a and all gate electrode lines 1 are short-circuited by short-circuit rings before the protection film 12 is formed by a plasma CVD method. Further, the picture element electrode 8 is short- circuited to the source electrode line 7a through a projection part 9 and then opened and separated electrically after the protection film 12 is formed on the entire surface by the CVD method. Consequently, all the source electrode lines 7a and picture element electrode 8 are prevented from being charged up during the CVD, the variation in the threshold voltage of the TFT is prevented, and a spot defect in a display is eliminated.

公开(公告)号：JPS62122179A

公开(公告)日：1987-06-03

申请号：JP26211685

申请日：1985-11-20

Applicant: SHARP KK

Inventor： TAKEMOTO TOSHIO

IPC: H01L31/04 ,  H01L31/0236

Abstract: PURPOSE:To increase the shortcircuit current and release voltage while promoting the curve factors secondarily thereby improving the photoelectric conversion efficiency by forming multiple protrusions on a substrate and on the protrusions a conductive electrode is formed, the surface opposite to the substrate being provided with fine irregularities. CONSTITUTION:Multiple protrusions are formed on the surface of a metallic substrate 11 while an insulating layer 9 with even film thickness is formed on the protrusions to reduce the reflecting power of light on the surface of a transparent conductive layer 16. Furthermore, a conductive electrode 12 with even film thickness is formed on the insulating layer 9 while the surface of conductive electrode 12 reverse to the surface facing the metallic substrate 11 is made rugged i.e. formed into a surface with fine irregularities. Resultantly, the surface of conductive electrode 12 is provided with two kinds of irregularities comprising the protrusions 18 of metallic substrate 11 and the fine irregularities 19 of said electrode 12 itself. Through these procedures, the shortcircuit current can be increased while promoting the curve factors thereby improving the photoelectric conversion efficiency.