公开(公告)号：US20150093906A1

公开(公告)日：2015-04-02

申请号：US14490939

申请日：2014-09-19

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Nobuo KOBAYASHI ,  Koichi HAMADA ,  Yoshiaki KUROKAWA ,  Masaaki FURUYA ,  Hideki MORI ,  Yasushi WATANABE ,  Yoshinori HAYASHI

IPC: H01L21/311 ,  B05C3/02 ,  B05C11/11 ,  B05C5/02 ,  B05C11/08 ,  B05C11/10

CPC classification number: H01L21/31111 ,  H01L21/67017 ,  H01L21/6708

Abstract: A substrate treatment apparatus which can more efficiently regenerate phosphoric acid which is able to be returned to etching treatment along with such etching treatment as much as possible without using a large facility, that is a substrate treatment apparatus which treats a silicon substrate W on which a nitride film is formed by a liquid etchant which contains phosphoric acid, which comprises an etching treatment unit (the spin treatment unit 30) which gives a suitable quantity of liquid, etchant to each substrate which is fed one at a time so as to etch the substrate and remove the nitride film, a phosphoric acid regenerating unit (the spin treatment unit 30) which mixes liquid etchant used for treatment of one substrate and a suitable quantity of liquid hydrofluoric acid for the amount of the used liquid etchant under a predetermined temperature environment to regenerate the phosphoric acid, and a phosphoric acid recovery unit (the pump 38, phosphoric acid recovery tank 50, and pump 52) which returns the phosphoric acid which was obtained by the phosphoric acid regenerating unit to the liquid etchant to be used at the etching treatment unit.

Abstract translation: 一种能够更有效地再生磷酸的基板处理装置，其可以在不使用大的设备的情况下尽可能多地进行蚀刻处理而返回到蚀刻处理，也就是基板处理装置，其处理硅基板W， 氮化物膜由含有磷酸的液体蚀刻剂形成，该液体蚀刻剂包括蚀刻处理单元（旋转处理单元30），该蚀刻处理单元（旋转处理单元30）向每个衬底提供适当量的液体，蚀刻剂，每个衬底一次一个地蚀刻， 基板并去除氮化物膜，将磷酸再生单元（旋转处理单元30）在预定温度环境下将用于处理一个基板的液体蚀刻剂和适量的液体氢氟酸混合使用液体蚀刻剂的量 再生磷酸，磷酸回收装置（泵38，磷酸回收槽50，pu mp 52），其将由磷酸再生单元获得的磷酸返回到在蚀刻处理单元处使用的液体蚀刻剂。

公开(公告)号：US20230307263A1

公开(公告)日：2023-09-28

申请号：US18125310

申请日：2023-03-23

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masaaki FURUYA ,  Hiroaki KOBAYASHI ,  Hideki MORI

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67248 ,  H01L21/67253

Abstract: According to one embodiment, a processing liquid supply device includes: a tank that stores the processing liquid; a supply path that supplies the processing liquid to the processing device; a heater that heats the processing liquid; a thermometer that measures a temperature of the processing liquid; a densitometer that measures a concentration of the processing liquid; and a controller including an inspecting unit that inspects the densitometer. The inspecting unit includes: a temperature setting device that sets a boiling point temperature at which a predetermined concentration is reached as a predetermined temperature; a heating controller that heats the processing liquid by the heater so as to reach a target temperature within a predetermined range; and a determination device that determines whether or not the concentration of the processing liquid is a target concentration within a predetermined range based on the predetermined concentration.

公开(公告)号：US20230286013A1

公开(公告)日：2023-09-14

申请号：US18119401

申请日：2023-03-09

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masaaki FURUYA ,  Hiroaki KOBAYASHI ,  Hideki MORI

IPC: B05C11/10

CPC classification number: B05C11/1007 ,  B05C11/1036 ,  B05C11/1042 ,  B05C11/1047

Abstract: According to one embodiment, a processing liquid supply device includes a plurality of tanks, a supply path that supplies a processing liquid to a processing device, a heating unit that heats the processing liquid, a dilution unit that dilutes the processing liquid, a new-liquid supply unit that supplies a new liquid, a common flow path through which the processing liquid of the plurality of tanks passes, a switching unit that switches between the plurality of tanks so that at least a tank is selected from which the processing liquid passes to the common flow path, a densitometer provided in the common flow path, and a control device that controls at least one of the heating unit, the dilution unit, and the new-liquid supply unit so that the concentration reaches a target value set in advance.

公开(公告)号：US20230077617A1

公开(公告)日：2023-03-16

申请号：US17942520

申请日：2022-09-12

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masaaki FURUYA ,  Hiroaki KOBAYASHI ,  Hideki MORI

IPC: H01L21/67

Abstract: According to one embodiment, provided is a supply tank a supply device, and a supply system that stabilizes the liquid temperature of a process liquid to be supplied to a substrate processing device. A supply tank that supplies a process liquid to a substrate processing device includes a container that stores the process liquid, a first dividing plate that divides the container into a first region where the process liquid is introduced, and a second region that supplies the process liquid to the substrate processing device, first piping that feeds, to the second region, the process liquid introduced in the first region, and a first heater which is provided on a path through the first piping, and which heats the process liquid.

公开(公告)号：US20230081295A1

公开(公告)日：2023-03-16

申请号：US17942786

申请日：2022-09-12

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masaaki FURUYA ,  Hiroaki KOBAYASHI ,  Hideki MORI

IPC: B05C11/10 ,  B05C11/11

Abstract: A supply device includes a collect tank which collects a process liquid from a substrate processing device and heats the collected liquid, and a supply tank connected to the collect tank and which supplies, to the substrate processing device, the process liquid heated in the collect tank. The collect tank includes a collect container that stores the process liquid, a first dividing plate that divides the collect container into a first region where the process liquid is introduced from the substrate processing device, and a second region that introduces the process liquid to the supply tank, piping that feeds, to the second region, the process liquid introduced in the first region, a first heater provided on a path through the piping and which heats the process liquid, and feed piping that feeds, to the supply tank, the process liquid in the second region and heated by the first heater.