公开(公告)号：US20150093906A1

公开(公告)日：2015-04-02

申请号：US14490939

申请日：2014-09-19

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Nobuo KOBAYASHI ,  Koichi HAMADA ,  Yoshiaki KUROKAWA ,  Masaaki FURUYA ,  Hideki MORI ,  Yasushi WATANABE ,  Yoshinori HAYASHI

IPC: H01L21/311 ,  B05C3/02 ,  B05C11/11 ,  B05C5/02 ,  B05C11/08 ,  B05C11/10

CPC classification number: H01L21/31111 ,  H01L21/67017 ,  H01L21/6708

Abstract: A substrate treatment apparatus which can more efficiently regenerate phosphoric acid which is able to be returned to etching treatment along with such etching treatment as much as possible without using a large facility, that is a substrate treatment apparatus which treats a silicon substrate W on which a nitride film is formed by a liquid etchant which contains phosphoric acid, which comprises an etching treatment unit (the spin treatment unit 30) which gives a suitable quantity of liquid, etchant to each substrate which is fed one at a time so as to etch the substrate and remove the nitride film, a phosphoric acid regenerating unit (the spin treatment unit 30) which mixes liquid etchant used for treatment of one substrate and a suitable quantity of liquid hydrofluoric acid for the amount of the used liquid etchant under a predetermined temperature environment to regenerate the phosphoric acid, and a phosphoric acid recovery unit (the pump 38, phosphoric acid recovery tank 50, and pump 52) which returns the phosphoric acid which was obtained by the phosphoric acid regenerating unit to the liquid etchant to be used at the etching treatment unit.

Abstract translation: 一种能够更有效地再生磷酸的基板处理装置，其可以在不使用大的设备的情况下尽可能多地进行蚀刻处理而返回到蚀刻处理，也就是基板处理装置，其处理硅基板W， 氮化物膜由含有磷酸的液体蚀刻剂形成，该液体蚀刻剂包括蚀刻处理单元（旋转处理单元30），该蚀刻处理单元（旋转处理单元30）向每个衬底提供适当量的液体，蚀刻剂，每个衬底一次一个地蚀刻， 基板并去除氮化物膜，将磷酸再生单元（旋转处理单元30）在预定温度环境下将用于处理一个基板的液体蚀刻剂和适量的液体氢氟酸混合使用液体蚀刻剂的量 再生磷酸，磷酸回收装置（泵38，磷酸回收槽50，pu mp 52），其将由磷酸再生单元获得的磷酸返回到在蚀刻处理单元处使用的液体蚀刻剂。

公开(公告)号：US20160276379A1

公开(公告)日：2016-09-22

申请号：US14777694

申请日：2014-03-17

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Koichi HAMADA ,  Nobuo KOBAYASHI

IPC: H01L27/12 ,  H01L21/687 ,  B08B3/10 ,  B08B3/02 ,  B08B3/08 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L27/1296 ,  B08B3/00 ,  B08B3/02 ,  B08B3/08 ,  B08B3/10 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68764

Abstract: According to one embodiment, a substrate processing apparatus (1) includes: a support (4) configured to support a substrate (W); a rotation mechanism (5) configured to rotate the support (4) about an axis that crosses the substrate (W) supported by the support (4) as a rotation axis; a nozzle (6) configured to supply a treatment liquid to a surface of the substrate (W) on the support (4) being rotated by the rotation mechanism (5); a heater (8) configured to heat the substrate (W) supported by the support (4) at a distance from the substrate (W); and a movement mechanism (9) configured to move the heater (8) in directions toward and away from the substrate (W) supported by the support (4).

Abstract translation: 根据一个实施例，基板处理装置（1）包括：支撑件（4），其构造成支撑基板（W）; 旋转机构（5），其构造成使所述支撑件（4）围绕由所述支撑件（4）支撑的所述基板（W）作为旋转轴线旋转的轴线旋转; 喷嘴（6），被配置为将处理液体供应到由所述旋转机构（5）旋转的所述支撑件（4）上的所述基板（W）的表面上; 加热器（8），被配置为在与所述基板（W）一定距离处加热由所述支撑件（4）支撑的所述基板（W）; 以及移动机构（9），其构造成沿着朝向和远离由所述支撑件（4）支撑的所述基板（W）的方向移动所述加热器（8）。

公开(公告)号：US20170250097A1

公开(公告)日：2017-08-31

申请号：US15441709

申请日：2017-02-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Koichi HAMADA ,  Nobuo KOBAYASHI

IPC: H01L21/67 ,  H01L21/687 ,  G02F1/13 ,  H01L21/306

Abstract: According to an embodiment, a substrate treatment apparatus includes, a substrate support unit supporting a substrate, a rotary unit rotating the substrate, a treatment liquid supply unit supplying treatment liquid to a surface of the substrate, and a controller performing liquid discharge treatment to change liquid discharge velocity at which the treatment liquid is discharged from the substrate, at preset predetermined timing, during substrate treatment in which the treatment liquid is supplied while the substrate is rotated, with the treatment continued.

公开(公告)号：US20140290859A1

公开(公告)日：2014-10-02

申请号：US14228515

申请日：2014-03-28

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Nobuo KOBAYASHI ,  Yoshiaki KUROKAWA ,  Koichi HAMADA

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  H01L21/6708

Abstract: A wet etching apparatus comprises a reservoir unit for storing aqueous solution of phosphoric acid, an additive reservoir unit for storing a silica additive; a concentration detecting unit configured to detect the silica concentration in the aqueous solution of phosphoric acid stored in the reservoir unit; a control unit configured to supply the silica additive from the additive reservoir unit to the reservoir unit if the silica concentration in the aqueous solution of phosphoric acid, detected by the concentration detecting unit, is lower than a prescribed value; and a processing unit configured to process the substrate with the aqueous solution of phosphoric acid stored in the reservoir unit.

Abstract translation: 湿蚀刻装置包括：用于储存磷酸水溶液的储存器单元，用于储存二氧化硅添加剂的添加剂储存单元; 浓度检测单元，被配置为检测存储在所述储存器单元中的磷酸水溶液中的二氧化硅浓度; 如果由浓度检测单元检测到的磷酸水溶液中的二氧化硅浓度低于规定值，则控制单元被配置为将二氧化硅添加剂从添加剂储存器单元供应到储存器单元; 以及处理单元，其被配置为用存储在所述储存器单元中的磷酸水溶液处理所述基板。