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公开(公告)号：WO2014015123A3
公开(公告)日：2014-06-12
申请号：PCT/US2013051053
申请日：2013-07-18
Applicant: SI WARE SYSTEMS , SABRY YASSER M , KHALIL DIAA ABDEL MAGED , SAADANY BASSAM A , BOUROUINA TARIK E
Inventor： SABRY YASSER M , KHALIL DIAA ABDEL MAGED , SAADANY BASSAM A , BOUROUINA TARIK E
CPC classification number: G02B26/10 , G02B5/10 , G02B26/101
Abstract: Optical systems with aspherical optical elements are described. The aspherical optical elements have surfaces in which the in-plane radius of curvature spatially varies and the in-plane cross section surface profile is characterized in that the multiplication of the cosine of the incidence angle raised to a non-zero exponent by the in-plane radius of curvature varies less than twenty percent between any two points on the in-plane cross section surface profile.
Abstract translation: 描述了具有非球面光学元件的光学系统。 非球面光学元件具有表面，其中面内曲率半径在空间上变化，并且面内截面表面轮廓的特征在于，入射角的余弦乘以非零指数， 平面曲率半径在平面截面表面轮廓上的任意两点之间变化小于百分之二十。
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公开(公告)号：WO2017011269A3
公开(公告)日：2017-04-27
申请号：PCT/US2016041357
申请日：2016-07-07
Applicant: SI-WARE SYSTEMS
Inventor： SABRY YASSER M , KHALIL DIAA , BOUROUINA TARIK E , ANWAR MOMEN
CPC classification number: H01L49/00 , G01J3/0205 , G01J3/0208 , G01J3/0216 , G01J3/0237 , G01J3/0245 , G01J3/108 , G01J3/26 , G01J3/42 , H01K1/04 , H01K1/14
Abstract: An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.
Abstract translation: 提供由无序半导体材料（例如黑色硅）产生的光辐射源。 光辐射源包括半导体衬底，蚀刻在半导体衬底中的无序半导体结构和接近无序半导体结构设置的加热元件，并且配置成将无序半导体结构加热到无序半导体结构发射热红外辐射的温度 。
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