公开(公告)号：SE526366C3

公开(公告)日：2005-10-26

申请号：SE0300784

申请日：2003-03-21

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  HUHTAOJA TOMMY ,  RANGSTEN PELLE

IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48

公开(公告)号：HK1084236A1

公开(公告)日：2006-07-21

申请号：HK06104564

申请日：2006-04-13

Applicant: SILEX MICROSYSTEMS AB

Inventor： KAELVESTEN EDVARD ,  EBEFORS THORBJOERN ,  SVEDIN NIKLAS ,  RANGSTEN PELLE ,  HUHTAOJA TOMMY

IPC: B81B20060101 ,  B81B7/00 ,  H01L20060101 ,  H01L21/768 ,  H01L23/48

Abstract: A method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate includes creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of the substrate, defined by the trench. Also described is a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, including a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through the substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and includes the same material as the substrate, i.e. it is made from the wafer material.

公开(公告)号：SE0300784A

公开(公告)日：2004-09-22

申请号：SE0300784

申请日：2003-03-21

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  HUHTAOJA TOMMY ,  RANGSTEN PELLE

IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L21/60

CPC classification number: B81B7/0006 ,  H01L21/76898 ,  H01L23/481 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05599

公开(公告)号：DK1609180T3

公开(公告)日：2013-06-24

申请号：DK04722492

申请日：2004-03-22

Applicant: SILEX MICROSYSTEMS AB

Inventor： KAELVESTEN EDVARD ,  EBEFORS THORBJOERN ,  RANGSTEN PELLE ,  HUHTAOJA TOMMY ,  SVEDIN NIKLAS

IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48

公开(公告)号：SE0300784L

公开(公告)日：2004-09-22

申请号：SE0300784

申请日：2003-03-21

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  HUHTAOJA TOMMY ,  RANGSTEN PELLE

IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L21/60

Abstract: A method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate includes creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of the substrate, defined by the trench. Also described is a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, including a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through the substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and includes the same material as the substrate, i.e. it is made from the wafer material.

公开(公告)号：SE0300784D0

公开(公告)日：2003-03-21

申请号：SE0300784

申请日：2003-03-21

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  HUHTAOJA TOMMY ,  RANGSTEN PELLE

IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L

Abstract: A method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate includes creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of the substrate, defined by the trench. Also described is a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, including a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through the substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and includes the same material as the substrate, i.e. it is made from the wafer material.

公开(公告)号：SE526366C2

公开(公告)日：2005-08-30

申请号：SE0300784

申请日：2003-03-21

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  HUHTAOJA TOMMY ,  RANGSTEN PELLE

IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L21/60

公开(公告)号：CA2519893A1

公开(公告)日：2004-09-30

申请号：CA2519893

申请日：2004-03-22

Applicant: SILEX MICROSYSTEMS AB

Inventor： HUHTAOJA TOMMY ,  EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  RANGSTEN PELLE ,  SVEDIN NIKLAS

IPC: H01L21/60 ,  B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L29/40

Abstract: The invention relates to a method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate. It comprising creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of said substrate, defined by said trench. It also relates to a product usable as a starting substrate for the manufacture of micro-electronic and/or micro- mechanic devices, comprising a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least on e electrically conducting member extending through said substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and comprises th e same material as the substrate, i.e. it is made from the wafer material.