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    ELECTRICAL CONNECTIONS IN SUBSTRATES
    1.
    发明专利
    ELECTRICAL CONNECTIONS IN SUBSTRATES 未知

    公开(公告)号：CA2519893C

    公开(公告)日：2013-03-12

    申请号：CA2519893

    申请日：2004-03-22

    Applicant: SILEX MICROSYSTEMS AB

    Inventor： KAELVESTEN EDVARD ,  EBEFORS THORBJOERN ,  SVEDIN NIKLAS ,  RANGSTEN PELLE ,  SCHOENBERG TOMMY

    IPC: H01L21/60 ,  B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L29/40

    Abstract: The invention relates to a method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate. It comprising creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of said substrate, defined by said trench. It also relates to a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, comprising a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through said substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and comprises the same material as the substrate, i.e. it is made from the wafer material.

    3.
    发明专利
    未知

    公开(公告)号：SE0300784L

    公开(公告)日：2004-09-22

    申请号：SE0300784

    申请日：2003-03-21

    Applicant: SILEX MICROSYSTEMS AB

    Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  HUHTAOJA TOMMY ,  RANGSTEN PELLE

    IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L21/60

    Abstract: A method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate includes creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of the substrate, defined by the trench. Also described is a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, including a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through the substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and includes the same material as the substrate, i.e. it is made from the wafer material.

    4.
    发明专利
    未知

    公开(公告)号：SE0300784D0

    公开(公告)日：2003-03-21

    申请号：SE0300784

    申请日：2003-03-21

    Applicant: SILEX MICROSYSTEMS AB

    Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  HUHTAOJA TOMMY ,  RANGSTEN PELLE

    IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L

    Abstract: A method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate includes creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of the substrate, defined by the trench. Also described is a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, including a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through the substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and includes the same material as the substrate, i.e. it is made from the wafer material.

    ELECTRICAL CONNECTIONS IN SUBSTRATES
    7.
    发明专利
    ELECTRICAL CONNECTIONS IN SUBSTRATES 未知

    公开(公告)号：CA2519893A1

    公开(公告)日：2004-09-30

    申请号：CA2519893

    申请日：2004-03-22

    Applicant: SILEX MICROSYSTEMS AB

    Inventor： HUHTAOJA TOMMY ,  EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  RANGSTEN PELLE ,  SVEDIN NIKLAS

    IPC: H01L21/60 ,  B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L29/40

    Abstract: The invention relates to a method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate. It comprising creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of said substrate, defined by said trench. It also relates to a product usable as a starting substrate for the manufacture of micro-electronic and/or micro- mechanic devices, comprising a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least on e electrically conducting member extending through said substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and comprises th e same material as the substrate, i.e. it is made from the wafer material.

    ELECTRICAL CONNECTIONS IN SUBSTRATES
    8.
    发明专利
    ELECTRICAL CONNECTIONS IN SUBSTRATES 未知

    公开(公告)号：HK1084236A1

    公开(公告)日：2006-07-21

    申请号：HK06104564

    申请日：2006-04-13

    Applicant: SILEX MICROSYSTEMS AB

    Inventor： KAELVESTEN EDVARD ,  EBEFORS THORBJOERN ,  SVEDIN NIKLAS ,  RANGSTEN PELLE ,  HUHTAOJA TOMMY

    IPC: B81B20060101 ,  B81B7/00 ,  H01L20060101 ,  H01L21/768 ,  H01L23/48

    Abstract: A method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate includes creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of the substrate, defined by the trench. Also described is a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, including a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through the substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and includes the same material as the substrate, i.e. it is made from the wafer material.

    10.
    发明专利
    未知

    公开(公告)号：SE0103471D0

    公开(公告)日：2001-10-15

    申请号：SE0103471

    申请日：2001-10-15

    Applicant: SILEX MICROSYSTEMS AB ELECTRUM

    Inventor： RANGSTEN PELLE ,  KAALVESTEN EDVARD ,  MECHBACH MARIANNE

    IPC: G01L9/00 ,  G01L

    Abstract: In manufacturing a pressure sensor a recess that will form part of the sensor cavity is formed in a lower silicon substrate. An SOI-wafer having a monocrystalline silicon layer on top of a substrate is bonded to the lower silicon substrate closing the recess and forming the cavity. The supporting substrate of the SOI-wafer is then etched away, the portion of the monocrystalline layer located above the recess forming the sensor diaphragm. The oxide layer of the SOI-wafer here acts as an "ideal" etch stop in the case where the substrate wafer is removed by dry (plasma) or wet etching using e.g. KOH. This is due to high etch selectivity between silicon and oxide for some etch processes and it results in a diaphragm having a very accurately defined and uniform thickness. The cavity is evacuated by forming a opening to the cavity and then sealing the cavity by closing the opening using LPCVD. Sensor paths for sensing the deflection of the diaphragm are applied on the outer or inner surface of the diaphragm. The monocrystalline diphragm gives the sensor a good long-term stability. Also the sensor path can be made of monocrystalline material, this giving the sensor even better good long-term characteristics. An increased sensitivity can be obtained by making active portions of the sensor paths freely extending, unsupported by other material of the pressure sensor, by suitable etching procedures.

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